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| FDD5810 N-Channel PowerTrench(R) MOSFET January 2006 FDD5810 N-Channel PowerTrench(R) MOSFET 60V, 35A, 27m Features RDS(ON) = 20.5m (Typ.), VGS = 5V, ID = 35A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse / Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications Motor / Body Load Control ABS Systems Powertrain Management Injection System DC-DC converters and Off-line UPS Distributed Power Architecture and VRMs Primary Switch for 12V and 24V systems A REE I DF M ENTATIO LE N MP LE D G S D G D-PAK TO-252 (TO-252) S (c)2006 Fairchild Semiconductor Corporation FDD5810 Rev. A (W) 1 www.fairchildsemi.com FDD5810 N-Channel PowerTrench(R) MOSFET Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V, TC = 52oC) Drain Current Continuous (VGS = 5V, TC = 42oC) Pulsed Single Pulse Avalanche Energy (Note 2) Power Dissipation Derate above 25oC Operating and Storage Temperature Continuous (TA = 25oC, VGS = 10V, with RJA = 52oC/W) (Note 1) (Note 1) Ratings 60 20 35 35 7.7 Figure 4 45 88 0.59 -55 to 175 Units V V A A A A mJ W W/oC o C Thermal Characteristics RJC RJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 1.7 52 oC/W oC/W Package Marking and Ordering Information Device Marking FDD5810 Device FDD5810 Package TO-252AA Reel Size 13" Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 48V VGS = 0V VGS = 20V TC = 150oC 60 1 250 100 V A nA On Characteristics VGS(TH) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 35A, VGS = 10V ID = 35A, VGS = 5V ID = 35A, VGS = 10V, TJ = 175oC 1 1.6 16.5 20.5 39 2 20 27 48 m V Dynamic Characteristics Ciss Coss Crss RG Qg Qg Qg(th) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 35A 1420 150 65 3.5 24 13 1.3 4.0 2.7 5.0 1890 200 100 34 18 pF pF pF nC nC nC nC nC nC FDD5810 Rev. A (W) 2 www.fairchildsemi.com FDD5810 N-Channel PowerTrench(R) MOSFET Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 35A VGS = 5V, RGS = 11 12 75 26 34 130 90 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 35A ISD = 16A IF = 35A, di/dt = 100A/s IF = 35A, di/dt = 100A/s 1.25 1.0 39 35 V V ns nC Notes: 1: Package Limitation is 35A. 2: Starting TJ = 25C, L = 110H, IAS = 28A, VDD = 54V, VGS = 10V. FDD5810 Rev. A (W) 3 www.fairchildsemi.com FDD5810 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) ID, DRAIN CURRENT (A) 50 CURRENT LIMITED BY PACKAGE 40 30 VGS = 10V 20 RJC = 1.7oC/W VGS = 5V 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 ZJC, NORMALIZED THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature PDM 0.1 t1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RJC + TC 10-3 10-2 10-1 100 101 0.01 10-5 10-4 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 600 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) 100 VGS = 5V 30 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101 Figure 4. Peak Current Capability FDD5810 Rev. A (W) 4 www.fairchildsemi.com FDD5810 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 10s IAS, AVALANCHE CURRENT (A) 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A) 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100s 10 STARTING TJ = 150oC STARTING TJ = 25oC 1ms 10ms DC 100 1 0.001 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability VGS = 4.5V 60 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 6V ID, DRAIN CURRENT (A) 60 VGS = 10V VGS = 5V 40 ID , DRAIN CURRENT (A) 40 TJ = 25oC 20 VGS = 4V VGS = 3.5V 20 VGS = 3V TJ = 175oC 0 0 1.0 2.0 TJ = -55 C 0 3.0 4.0 5.0 0 o PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 TC = 25oC 2.0 2.5 VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics 30 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX RDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 26 ID = 35A 22 2.8 Figure 8. Saturation Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.4 2.0 1.6 1.2 0.8 VGS = 5V, ID = 35A 0.4 18 ID = 1A 14 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDD5810 Rev. A (W) 5 www.fairchildsemi.com FDD5810 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 1.4 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.1 1.2 ID = 250A 1.1 0.8 1.0 0.5 0.2 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) 0.9 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 30V 8 Ciss C, CAPACITANCE (pF) 1000 Coss Crss 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 35A ID = 1A 0 5 10 15 20 25 100 2 10 0.1 VGS = 0V, f = 1MHz 0 1 10 60 VDS , DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current FDD5810 Rev. A (W) 6 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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