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NIB6404-5L
Preferred Device
HDPlust 52 Amps, 40 Volts
Self Protected with Temperature Sense N-Channel D2PAK
HDPlus devices are an advanced series of Power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating additional features such as clamp diodes. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. This new HDPlus device features integrated Gate-to-Source diodes for ESD protection, and Gate-to-Drain clamp for overvoltage protection. Also, this device integrates a sense diode for temperature monitoring. * Ultra Low RDS(on) Provides Higher Efficiency * IDSS Specified at Elevated Temperature * Avalanche Energy Specified * Overvoltage Protection * FET ESD Human Body Model Discharge Sensitivity Class 3 * Temperature Sense Diode
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (Note 1) (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 25 A, L = 1.4 mH, RG = 10 k) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 140C - Single Pulse (tpv10 s) Total Power Dissipation (t 10 seconds) Linear Derating Factor Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) Symbol VDSS VDGR VGS TJ, Tstg EAS Value 40 40 "10 -55 to +175 450 Unit Vdc Vdc Vdc C mJ NIB6404 = Device Code A = Assembly Location Y = Year WW = Work Week D2PAK CASE 936D PLASTIC NIB6404 AYWW G T1 T2 S
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52 AMPERES 40 VOLTS RDS(on) = 20 m
D T2
G T1 S
MARKING DIAGRAM
D
Adc ID ID IDM PD @ TA = 25C RJC RJA 52 25 200 115 0.76 1.3 80 W W/C C/W
Preferred devices are recommended choices for future use and best overall value.
ORDERING INFORMATION
Device NIB6404-5L Package D2PAK Shipping 800 Tape & Reel
1. Measured while surface mounted to an FR4 board using the minimum recommended pad size. Typical value is 64C/W.
Observe the general handling precautions for electrostatic-discharge sensitive devices (ESD) to prevent damage.
(c) Semiconductor Components Industries, LLC, 2002
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February, 2002 - Rev. 2
Publication Order Number: NIB6404-5L/D
NIB6404-5L
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 Adc, -55C < TJ < 175C) Temperature Coefficient (Negative) Gate-to-Source Clamp Voltage (Note 2) (VGS = 0 Vdc, IG = 20 Adc) Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0 Vdc) (VDS = 15 Vdc, VGS = 0 Vdc) (VDS = 35 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 2) (VGS = 5.0 Vdc, ID = 20 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 2) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 32 Vdc, ID = 25 Adc, VGS = 5.0 Vdc) (Note 2) (VDD = 32 Vdc, ID = 25 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 10 k) (Note 2) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 25 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 2) Reverse Recovery Stored Charge TEMPERATURE SENSE DIODE CHARACTERISTICS Forward (Reverse) On-Voltage Temperature Coefficient (Negative) Forward Voltage Hysteresis (IF(R) = 250 Adc) (Note 2) (IF(R) = 250 Adc, TJ = 125C) IF(R) = 250 Adc, TJ = 160C IF(R) = 125 Adc to 250 Adc VAC(ACR) VFTC Vhys 715 - 1.57 25 743 570 1.71 37 775 - 1.85 50 mVdc mV/C mVdc (IS = 20 Adc, VGS = 0 Vdc) (Note 2) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR - - - - - - 0.876 0.746 60 29 32 80 1.2 - - - - - pC Vdc ns - - - - - - - - 11.2 38.5 31.5 29.5 29 6.0 16 2.0 - - - - - - - - nC s (VDS = 25 Vdc, VGS = 0 Vdc, Vd Vd f = 1.0 MHz) Ciss Coss Crss - - - 1720 525 120 - - - pF VGS(th) 1.0 - RDS(on) gFS - TBD 1.7 4.5 18 34 2.0 - 20 - Vdc mV/C m mhos V(BR)DSS 40 - V(BR)GSS IDSS - - - IGSS - 1.1 0.2 4.0 0.02 100 2.0 20 1.0 Adc 10 51 7.0 13 55 - 20 Vdc mV/C Vdc Adc Symbol Min Typ Max Unit
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NIB6404-5L
TYPICAL ELECTRICAL CHARACTERISTICS
50 I D, DRAIN CURRENT (AMPS) 45 40 35 30 25 20 15 10 5.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 2.5 V 3.0 V TJ = 25C 40 5.0 V 4.5 V 4.0 V I D, DRAIN CURRENT (AMPS) 3.5 V 35 30 25 20 TJ = 175C 15 25C 10 -55C 5.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 50 45 40 35 30 25 20 15 10 5.0 0 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPS) -55C 25C TJ = 175C RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 50 45 40 35 30 25 20 15 10 5.0 0 0
Figure 2. Transfer Characteristics
VGS = 3.0 V
3.5 V
4.0 V 5.0 V 10 V TJ = 25C 10 20 30 40 50
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) VGS = 5.0 V ID = 20 A C, CAPACITANCE (pF)
4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 5.0 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Coss Crss Ciss VGS = 0 V f = 1.0 MHz TJ = 25C
Figure 5. On-Resistance Variation with Temperature
Figure 6. Capacitance Variation
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NIB6404-5L
TYPICAL ELECTRICAL CHARACTERISTICS
5000 4500 C, CAPACITANCE (pF) 4000 3500 3000 2500 2000 1500 1000 500 0 0 2.0 4.0 6.0 8.0 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V f = 1 MHz TJ = 25C Coss 20 Ciss IS, SOURCE CURRENT (A) 18 16 14 12 10 8.0 6.0 4.0 2.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) TJ = 175C 25C
Figure 7. Capacitance Variation
VFTC, TEMPERATURE COEFFICIENT (mV/C)
Figure 8. Diode Forward Voltage versus Current
-1.3 -1.4 -1.5 -1.6 -1.7 -1.8 -1.9 -2.0 -2.1 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) IF(R) = 250 mA
1.0 VF, FORWARD VOLTAGE (V) 0.9 IF(R) = 500 mA 0.8 250 mA 0.7 125 mA 0.6 0.5 50 mA 0.4 0.3 -100 25 mA -50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (C)
Figure 9. Sense Diode Forward Voltage Variation with Temperature
Figure 10. Sense Diode Temperature Coefficient Variation with Temperature
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NIB6404-5L
PACKAGE DIMENSIONS
D2PAK CASE 936D-03 ISSUE B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS A AND K. 4. DIMENSIONS U AND V ESTABLISH A MINIMUM MOUNTING SURFACE FOR TERMINAL 6. 5. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH OR GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.025 (0.635) MAXIMUM. DIM A B C D E G H J K L M N P R S U V INCHES MIN MAX 0.386 0.403 0.356 0.368 0.170 0.180 0.026 0.036 0.045 0.055 0.067 BSC 0.539 0.579 0.125 MAX 0.050 REF 0.000 0.010 0.088 0.102 0.018 0.026 0.058 0.078 5 _ REF 0.116 REF 0.200 MIN 0.250 MIN MILLIMETERS MIN MAX 9.804 10.236 9.042 9.347 4.318 4.572 0.660 0.914 1.143 1.397 1.702 BSC 13.691 14.707 3.175 MAX 1.270 REF 0.000 0.254 2.235 2.591 0.457 0.660 1.473 1.981 5 _ REF 2.946 REF 5.080 MIN 6.350 MIN
-T- A K B
12345 OPTIONAL CHAMFER
TERMINAL 6
E
U V
S H M L
J D 0.010 (0.254)
M
T
N G R
P
C
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Notes
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NIB6404-5L
Notes
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NIB6404-5L
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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NIB6404-5L/D

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