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| STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FP low gate charge STripFETTM Power MOSFET Features Type STD20NF20 STF20NF20 STP20NF20 VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 200 V < 0.125 200 V < 0.125 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 DPAK Application Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. Table 1. Device summary Marking 20NF20 20NF20 20NF20 Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STD20NF20 STF20NF20 STP20NF20 December 2009 Doc ID 13154 Rev 4 1/15 www.st.com 15 www.DataSheet.in Contents STD20NF20, STF20NF20, STP20NF20 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT (2) Absolute maximum ratings Value Parameter TO-220, DPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 110 0.72 15 2500 200 20 18 11 72 30 0.2 TO-220FP V V A A A W W/C V/ns V Unit dv/dt Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 C) Storage temperature VISO Tstg Tj -55 to 175 Max. operating junction temperature C 1. Pulse width limited by safe operating area 2. ISD 18 A, di/dt 400 A/s, VDD V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose TO-220 1.38 62.5 DPAK 1.38 50 (1) TO-220FP 5 62.5 300 Unit C/W C/W C 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max value 18 110 Unit A mJ Doc ID 13154 Rev 4 3/15 www.DataSheet.in Electrical characteristics STD20NF20, STF20NF20, STP20NF20 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 10 A 2 3 0.10 Min. 200 1 10 100 4 0.125 Typ. Max. Unit V A A nA V Table 6. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tr Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 25 V, ID= 10 A Min. Typ. 13 940 197 30 15 30 40 10 28 5.6 14.5 39 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25 V, f = 1 MHz, VGS = 0 - VDD = 100 V, ID = 10 A, RG= 4.7 VGS = 10 V (see Figure 15) VDD = 160 V, ID = 20 A, VGS = 10 V (see Figure 16) - - 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 4/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 20 A, VGS = 0 Test conditions Min. Typ. Max. 18 72 1.6 155 775 10 183 1061 11.6 Unit A A V ns nC A ns nC A - Reverse recovery time ISD = 20 A, di/dt = 100A/s Reverse recovery charge VDD = 50 V Reverse recovery current (see Figure 20) Reverse recovery time ISD = 20 A, di/dt = 100 A/s Reverse recovery charge VDD = 50 V, Tj = 150 C Reverse recovery current (see Figure 20) - 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. Doc ID 13154 Rev 4 5/15 www.DataSheet.in Electrical characteristics STD20NF20, STF20NF20, STP20NF20 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, DPAK Figure 3. Thermal impedance area for TO-220, DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Figure 8. GFS (S) 19 17 TJ=25C 15 13 TJ=175C 11 9 7 3 6 9 12 15 18 ID(A) Electrical characteristics Figure 9. AM03979v1 Transconductance Static drain-source on resistance TJ=-50C Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.10 1.00 AM03980v1 Figure 13. Normalized on resistance vs temperature RDS(on) (norm) 2.4 2.2 2.0 AM03981v1 0.90 0.80 0.70 0.60 0.50 0.40 -50 0 50 100 150 TJ(C) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 TJ(C) Doc ID 13154 Rev 4 7/15 www.DataSheet.in Electrical characteristics Figure 14. Source-drain diode forward characteristics VSD (V) 0.9 TJ=25C 0.8 AM03982v1 STD20NF20, STF20NF20, STP20NF20 TJ=-50C 0.7 TJ=175C 0.6 0.5 3 6 9 12 15 18 ISD(A) 8/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Test circuits 3 Test circuits Figure 16. Gate charge test circuit VDD 12V 2200 Figure 15. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS VD Figure 20. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 13154 Rev 4 9/15 www.DataSheet.in Package mechanical data STD20NF20, STF20NF20, STP20NF20 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S Doc ID 13154 Rev 4 11/15 www.DataSheet.in Package mechanical data STD20NF20, STF20NF20, STP20NF20 TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 12/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 Doc ID 13154 Rev 4 13/15 www.DataSheet.in Revision history STD20NF20, STF20NF20, STP20NF20 6 Revision history Table 8. Date 25-Jan-2007 20-Mar-2007 27-Apr-2007 10-Dec-2009 Revision history Revision 1 2 3 4 First release Typo mistake in first page (order codes) Updates on Table 6: Dynamic Modified device summary on first page Changes 14/15 Doc ID 13154 Rev 4 www.DataSheet.in STD20NF20, STF20NF20, STP20NF20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 13154 Rev 4 15/15 www.DataSheet.in |
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