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DATA SHEET
MOS INTEGRATED CIRCUIT
PD16805
MONOLITHIC H BRIDGE DRIVER CIRCUIT
PD16805 is the monolithic and H bridge driver IC which consists of a CMOS control circuit and a MOS output
stage. As compared with the driver of a MOS process using the conventional bipolar transistor, reduction of consumption current and power consumption is possible. With this product, clockwise and the inversion, and the brake function are built in, and it is the best for the drive circuit of the motor for film winding up of a camera, and the motor for auto focus/zooms. The package has adopted the 16 pin SOP and the 24 pin TSSOP, and corresponds to reduction of mounting area and mounting height. This product corresponds to the drive current to 1.0 A (DC).
FEATURES
* High drive current ID(pulse) = 4.2 A MAX. at PW 200 ms (single pulse) ID(DC) = 1.0 A (DC) * Low-ON resistance (sum of the upper and lower sides MOS FET) RON = 0.4 TYP. at ID = 1.0 A * Standby function that turns OFF charge pump circuit * Compact surface mount package 16-pin plastic SOP (1.27 mm pitch) 24-pin plastic TSSOP (0.5 mm pitch)
ORDERING INFORMATION
Part Number Package 16-pin plastic SOP (7.64 mm (300)) 24-pin plastic TSSOP (5.72 mm (225))
PD16805GS PD16805MA-6A5
The information in this document is subject to change without notice.
Document No. S11032EJ4V0DS00 (4th edition) Date Published July 2001 N CP(K) Printed in Japan
(c)
1997
PD16805
ABSOLUTE MAXIMUM RATINGS (TA = 25C, Glass epoxy substrate 100 mm x 100 mm x 1 mm, 15% copper foil)
Parameter Supply voltage VG pin applied voltage Input voltage H bridge drive current H bridge drive current Power consumption Peak junction temperature Storage temperature Symbol VDD VM VG VIN ID(DC) ID(pulse) PT DC PW 200 ms (single pulse) GS MA-6A5 TCH(MAX) Tstg Control section Motor section Conditions Rating -0.5 to +6.5/+8.0Note -0.5 to +6.5/+8.0 15 -0.5 to VDD +0.5 1.0 4.2 1.0 0.7 150 -55 to +150
Note
Unit V V V V A A/ch W W C C
Note When the charge pump is used/when VG power-source supply from the exterior.
RECOMMENDED OPERATING CONDITIONS (TA = 25C, Glass epoxy substrate 100 mm x 100 mm x 1 mm, 15% copper foil)
Parameter Symbol VDD VM Charge pump capacitance VG pin applied voltageNote 1 Operating temperature C1 to C3 VG TA At the time of external input Ambient temperature 11 -30 Conditions During normal operation All input pins are low MIN. 3.0 2.5 0.5 0.01 14 60 6.0/7.5Note 2 TYP. MAX. Unit V V
Supply voltage
F
V C
Notes 1. When voltage is impressed to VG terminal from the exterior 2. When the charge pump is used/when VG power-source supply from the exterior.
ELECTRICAL SPECIFICATIONS (Unless otherwise specified, VDD = recommended operating condition, VM = 0.5 to 6.0 V)
Parameter Symbol IDD1 VDD pin current IDD2 Conditions VDD = 5 V, TA = Recommended conditions Control pins at high level VDD = 5 V, TA = Recommended conditions Control pins at low level TA = Reommended conditions Control pins at low level Control pins at low level ID = 1 A, VDD = VM = 5 V C1 = C2 = C3 = 0.01 F sum of the upper and lower sides MOSFET TA = Recommended conditions TA = Recommended conditions VDD = VM = 5 V, TA = Recommended conditions C1 = C2 = C3 = 0.01 F ID = 1 A 35 TA = Recommended conditions
Data Sheet S11032EJ4V0DS
MIN.
TYP. 0.6
MAX. 2.0
Unit mA
0.3
10
A A A
VM pin current
IM1 IM2
0.1
10 1.0
H bridge ON resistance
RON
0.4
0.6
High-level input voltage Low-level input voltage Charge pump circuit turn-ON time H bridge output circuit turn-ON time H bridge output circuit turn-OFF time Control pin input pull-down resistor
VIH VIL tONG tONH tOFFH RIND
0.6 x VDD 0.2 x VDD 0.5 1.0 10 5.0 50 65 75
V V ms
s s
k k
25
2
PD16805
FUNCTION TABLE
Input Signal IN1 H H L L X X IN2 H L H L X X INC H H H H L X STB H H H H H L
Function Brake mode Forward mode Reverse mode Stop mode Stop mode Standby mode
Forward mode
Reverse mode
VM
VM
ON
OFF
OFF
ON
OUT1
OUT2
OUT1
OUT2
OFF
ON
ON
OFF
Brake mode
Stop mode
VM
VM
OFF
OFF
OFF
OFF
OUT1
OUT2
OUT1
OUT2
ON
ON
OFF
OFF
Data Sheet S11032EJ4V0DS
3
PD16805
Terminal function
* PD16805GS Package: 16 pin plastic SOP
C2L C1H C1L VM VDD IN1 IN2 INC
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
C2H VG STBY OUT2 PGND OUT1 VM DGND
Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Terminal name C2L C1H C1L VM VDD IN1 IN2 INC DGND VM OUT1 PGND OUT2 STBY VG C2H
Terminal function The capacitor connection terminal for charge pumps The capacitor connection terminal for charge pumps The capacitor connection terminal for charge pumps Motor block supply voltage input terminal Control block supply voltage input terminal Input terminal Input terminal Input terminal Control block GND terminal Motor block supply voltage input terminal Output terminal Output block GND terminal Output terminal Standby terminal Gate input terminal The capacitor connection terminal for charge pumps
4
Data Sheet S11032EJ4V0DS
PD16805
Terminal function
* PD16805MA-6A5 Package: 24 pin plastic TSSOP
C2L C1H C1L VM VM NC NC NC VDD IN1 IN2 INC
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
C2H VG STBY OUT2 OUT2 PGND PGND OUT1 OUT1 VM VM DGND
Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Terminal name C2L C1H C1L VM VM NC NC NC VDD IN1 IN2 INC DGND VM VM OUT1 OUT1 PGND PGND OUT2 OUT2 STBY VG C2H
Terminal function The capacitor connection terminal for charge pumps The capacitor connection terminal for charge pumps The capacitor connection terminal for charge pumps Motor block supply voltage input terminal Motor block supply voltage input terminal no used terminal no used terminal no used terminal Control block supply voltage input terminal Input terminal Input terminal Input terminal Control block GND terminal Motor block supply voltage input terminal Motor block supply voltage input terminal Output terminal Output terminal Output block GND terminal Output block GND terminal Output terminal Output terminal Standby terminal Gate input terminal The capacitor connection terminal for charge pumps
Notice Please connect all the terminals that have plural. (VM, OUT1, OUT2, PGND) No used terminals are connected to ground.
Data Sheet S11032EJ4V0DS
5
PD16805
BLOCK DIAGRAM
C2L
1 Charge-pump circuit
24
C2H
C1H
2
23
VG
C1L
3
22
STBY
VM
4
21
OUT2
VM
5
20
OUT2
NC
6
19
PGND
NC
7 H-bridge circuit Level shift circuit Control circuit
18
PGND
NC
8
17
OUT1
VDD
9
16
OUT1
IN1
10
15
VM
IN2
11
14
VM
INC
12
13
DGND
The connection diagram of PD16805MA-6A5 shows the block diagram.
It of PD16805GS does not
change, except that there are not NC and plural terminals. The plural terminal should connect all terminals.
6
Data Sheet S11032EJ4V0DS
PD16805
The example of standard connection
(1) using charge pump circuit
0.01 F C2L C1H 0.01 F C1L 0.5 to 6.0 V VM VM NC NC 3.0 to 6.0 V REG CPU CPU CPU NC VDD IN1 IN2 INC
3 22 1 24
C2H VG STBY OUT2 OUT2
Charge-pump circuit
2 23
0.01 F
CPU
4
21
10 F
5
20
6
19
PGND M PGND OUT1 OUT1 VM VM DGND
7
18
8
9
Level shift circuit Control circuit
H-bridge circuit
17
16
10
15
11
14
12
13
(2) unusing charge pump circuit
C2L C1H C1L 0.5 to 7.5 V VM VM NC NC 3.0 to 7.5 V REG CPU CPU CPU NC VDD IN1 IN2 INC
1
24
C2H VG STBY OUT2 OUT2 PGND M PGND OUT1 OUT1 VM VM DGND 11 to 14 V CPU
Charge-pump circuit
2 23
3
22
4
21
10 F
5
20
6
19
7
18
8
9
Level shift circuit Control circuit
H-bridge circuit
17
16
10
15
11
14
12
13
The connection diagram of PD16805MA-6A5 is shown by the inside of a figure. This circuit diagrams are an example of connection, and are not intended for use in actual design-ins. Moreover, it recommendeds inserting an about several F capacitor between VM-GND for surge voltage protection of the output stage.
Data Sheet S11032EJ4V0DS
7
PD16805
TYPICAL CHARACTERISTICS (TA = 25C)
PT-TA characteristics 1.4
H-bridge ON resistance RON () Total power dissipation PT (W)
RON-TA characteristics IDR = 0.5 A VDD = VM = 5 V
1.2 1.0 0.8 0.6 PD16805MA-6A5 0.4 0.2
1.2 1.0 0.8 0.6 0.4 0.2 0 -50
PD16805GS
0
10
20
30
40
50
60
70
80
-25
0
25
50
75
100
Ambient temperature TA (C)
Ambient temperature TA (C)
VG-IG characteristics VDD = 5 V 60
Gate current IG ( A) H-bridge ON resistance RON ()
VG-RON characteristics VDD = 5 V 1.2 1.0 0.8 0.6 0.4 0.2
50 40 30 20 10
0
5
10
15
20
0
5
10
15
20
Gate supply voltage VG (V)
Gate supply voltage VG (V)
8
Data Sheet S11032EJ4V0DS
PD16805
PACKAGE DIMENSION (PD16805GS)
16-PIN PLASTIC SOP (7.62 mm (300))
16 9 detail of lead end
P
1 A
8
F G S B N C D E M
M
H I J
L K
S
NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition.
ITEM A B C D E F G H I J K L M N P
MILLIMETERS 10.20.2 0.78 MAX. 1.27 (T.P.) 0.42 +0.08 -0.07 0.10.1 1.650.15 1.55 7.70.3 5.60.2 1.10.2 0.22 +0.08 -0.07 0.60.2 0.12 0.10 3 +7 -3 P16GM-50-300B-6
Data Sheet S11032EJ4V0DS
9
PD16805
PACKAGE DIMENSION (PD16805MA-6A5)
24-PIN PLASTIC TSSOP (5.72 mm (225))
24 13 detail of lead end F G R
P
L S
1
12
E
A A' S
H I J
C D M
M
K B
N
S
NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition.
ITEM A A' B C D E F G H I J K L M N P R S
MILLIMETERS 6.650.10 6.50.1 0.575 0.5 (T.P.) 0.220.05 0.10.05 1.2 MAX. 1.00.05 6.40.1 4.40.1 1.00.1 0.170.025 0.5 0.10 0.08 3+5 -3 0.25 0.60.15 P24MA-50-6A5
10
Data Sheet S11032EJ4V0DS
PD16805
RECOMMENDED SOLDERING CONDITIONS
It is recommended to solder this under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. For details of the recommended soldering conditions, refer to information document "Semiconductor Device Mounting Technology Manual".
PD16805GS
Soldering Method Soldering Conditions Peak package temperature: 235C, Time: 30 seconds MAX. (210C MIN.), Number of times: 2 MAX. Peak package temperature: 215C, Time: 40 seconds MAX. (200C MIN.), Number of times: 2 MAX. Recommended Conditions Symbol IR35-00-2
Infrared reflow
VPS
VP15-00-2
The number of storage days at 25C, 65% RH after the dry pack has been opened
PD16805MA-6A5
Soldering Method Soldering Conditions Package peak temperature: 235C; Duration: 30 sec. max. (210C or above): Number of times: Max. 3; Time limit: NoneNote Flux: Rosin type flux with reduced chlorine content (chlorine 0.2 Wt% or less) is recommended. Package peak temperature: 215C; Duration: 40 sec. max. (200C or above): Number of times:3; Time limit: NoneNote Flux: Rosin type flux with reduced chlorine content (chlorine 0.2 Wt% or less) is recommended. Package peak temperature: 260C or less, Duration: 10 sec. Max.,. Preparatory heating temperature: 120C or less; Number of times: 1 Flux: Rosin type flux with reduced chlorine content (chlorine 0.2 Wt% or less) is recommended. Recommended Conditions Symbol
Infrared reflow
IR35-00-3
VPS
VP15-00-3
Wave soldering
WS60-00-1
Note The number of storage days at 25C, 65% RH after the dry pack has been opened Caution Use of more than one soldering method should be avoided.
Data Sheet S11032EJ4V0DS
11
PD16805
[MEMO]
12
Data Sheet S11032EJ4V0DS
PD16805
[MEMO]
Data Sheet S11032EJ4V0DS
13
PD16805
[MEMO]
14
Data Sheet S11032EJ4V0DS
PD16805
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
Data Sheet S11032EJ4V0DS
15
PD16805
* The information in this document is current as of June, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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