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| ON Semiconductort High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C BF393 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 2 BASE 1 EMITTER COLLECTOR 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symb ol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown (IC = 1.0 mAdc, IB =0) Voltage(1) V(BR)C EO Vdc 300 300 6.0 -- -- Vdc -- Vdc -- Adc 0.1 Adc -- 0.1 Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. V(BR)C BO V(BR)E BO ICBO IEBO (c) Semiconductor Components Industries, LLC, 2001 1 February, 2001 - Rev. 1 Publication Order Number: BF393/D BF393 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 VCE(sat) -- VBE(sat) -- 2.0 2.0 Vdc -- -- Vdc -- SMALL-SIGNAL CHARACTERISTICS CurrentGain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 60 Vdc, IE = 0, f = 1.0 MHz) fT 50 Cre -- 2.0 -- pF MHz http://onsemi.com 2 BF393 200 VCE = 10 Vdc TJ = +125C hFE, DC CURRENT GAIN 100 25C 50 -55C 30 20 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 Figure 1. DC Current Gain 100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.2 0.5 Ccb 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 Ceb BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 30 20 f T, CURRENT-GAIN 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 2. Capacitances Figure 3. Current-Gain -- Bandwidth Product 1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 TA = 25C TC = 25C 100 ms CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 100 s 10 s 1.0 ms 200 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. "On" Voltages Figure 5. Maximum Forward Bias Safe Operating Area http://onsemi.com 3 BF393 PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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