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| ON Semiconductor ) SWITCHMODETM NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state-of-the-art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These high-voltage/high-speed transistors offer the following: BUL147 POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS * Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for Turn-Off (No Current Tail) Parametric Distributions are Tight and Consistent Lot-to-Lot Two Package Choices: Standard TO-220 or Isolated TO-220 4 * * MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak(1) Base Current -- Continuous -- Peak(1) Total Device Dissipation Derate above 25C Operating and Storage Temperature (TC = 25C) Symbol VCEO VCES VEBO IC ICM IB IBM PD TJ, Tstg BUL147 400 700 9.0 8.0 16 4.0 8.0 125 1.0 - 65 to 150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 BUL147 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Symbol RJC RJA TL BUL44 1.0 62.5 260 Unit C/W C (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 5 Publication Order Number: BUL147/D BUL147 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) Base-Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) Collector-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) (TC = 125C) (IC = 4.5 Adc, IB = 0.9 Adc) (TC = 125C) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) (TC = 125C) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) (TC = 125C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25C to 125C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation VoltVolt age: Determined 1.0 s and 3.0 3 0 s respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 0.9 Adc 09 VCC = 300 V) 1.0 s 3.0 s 1.0 s 3.0 s (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) fT Cob Cib -- -- -- -- -- -- -- VCE(dsat) -- -- -- -- 14 100 1750 3.0 5.5 0.8 1.4 3.3 8.5 0.4 1.0 -- 175 2500 -- -- -- -- -- -- -- -- Volts MHz pF pF hFE VBE(sat) VCE(sat) -- -- -- -- 14 -- 8.0 7.0 10 10 0.25 0.3 0.35 0.35 -- 30 12 11 18 20 0.5 0.5 0.7 0.8 34 -- -- -- -- -- -- -- -- 0.82 0.92 1.1 1.25 Vdc Vdc VCEO(sus) ICEO ICES 400 -- -- -- -- -- -- -- -- -- -- -- -- 100 100 500 100 100 Vdc Adc Adc Symbol Min Typ Max Unit IEBO Adc (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. http://onsemi.com 2 BUL147 SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Turn-On Time Turn-Off Time (TC = 125C) Turn-On Time Turn-Off Time (TC = 125C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) tc (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 0.9 Adc) tfi (TC = 125C) tsi tc (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 2.25 Adc) tfi (TC = 125C) tsi tc (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc) tfi (TC = 125C) tsi -- -- -- -- -- -- -- -- -- -- -- -- 60 -- 2.6 -- -- -- 100 120 1.3 1.9 210 230 80 100 1.6 2.1 170 200 -- 150 -- 4.3 200 330 180 -- 2.5 -- 350 -- 150 -- 3.2 -- 300 -- 180 -- 3.8 -- 350 -- ns s ns ns s ns ns s ns (IC = 4.5 Adc, IB1 = 0.9 Adc IB1 = 2.25 Adc, VCC = 300 V) ton (TC = 125C) toff (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc, VCC = 300 V) ton (TC = 125C) toff -- -- -- -- -- -- -- -- 200 190 1.0 1.6 85 100 1.5 2.0 350 -- 2.5 -- 150 -- 2.5 -- ns s ns s http://onsemi.com 3 BUL147 TYPICAL STATIC CHARACTERISTICS 100 TJ = 125C h FE , DC CURRENT GAIN TJ = 25C 10 TJ = - 20C VCE = 1 V h FE , DC CURRENT GAIN 100 TJ = 125C TJ = 25C 10 TJ = - 20C VCE = 5 V 1 0.01 0.1 1 10 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt 2 TJ = 25C V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) 1.5 IC = 1 A 3A 5A 8A 10 A 10 Figure 2. DC Current Gain @ 5 Volts 1 1 0.1 IC/IB = 10 IC/IB = 5 TJ = 25C TJ = 125C 0.1 1 IC COLLECTOR CURRENT (AMPS) 10 0.5 0 0.01 0.1 1 IB, BASE CURRENT (AMPS) 10 0.01 0.01 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.3 1.2 V BE , VOLTAGE (VOLTS) 1.1 10000 Cib 1000 C, CAPACITANCE (pF) Cob 100 TJ = 25C f = 1 MHz 1 0.9 0.8 0.7 0.6 0.5 TJ = 125C 0.4 0.01 0.1 1 TJ = 25C IC/IB = 5 IC/IB = 10 10 IC, COLLECTOR CURRENT (AMPS) 10 1 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 4 BUL147 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 4000 IC/IB = 5 IC/IB = 10 TJ = 125C TJ = 25C 3500 3000 I /I = 5 CB t, TIME (ns) 2500 2000 1500 1000 500 0 1 IC/IB = 10 TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 300 V PW = 20 s IB(off) = IC/2 VCC = 300 V PW = 20 s t, TIME (ns) 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton 3500 3000 2500 t, TIME (ns) 2000 1500 1000 500 0 1 2 TJ = 25C TJ = 125C IC/IB = 10 7 8 IC/IB = 5 4000 3500 t si , STORAGE TIME (ns) 3000 2500 2000 1500 1000 500 0 3 4 Figure 8. Resistive Switching, toff IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A IC = 4.5 A 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 3 4 6 5 IC COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 300 250 200 t, TIME (ns) 150 100 50 0 1 tc 250 200 150 100 50 0 TJ = 25C TJ = 125C tc IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 2 3 4 5 IC, COLLECTOR CURRENT (AMPS) t, TIME (ns) tfi TJ = 25C TJ = 125C 6 7 tfi 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 http://onsemi.com 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 BUL147 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 180 160 t fi , FALL TIME (ns) 140 120 100 80 60 3 IC = 4.5 A 4 5 6 7 8 9 10 11 12 13 14 15 TJ = 25C TJ = 125C IC = 2 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 300 IC = 2 A TC , CROSSOVER TIME (ns) 250 200 150 100 50 IC = 4.5 A TJ = 25C TJ = 125C 3 4 5 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 I C , COLLECTOR CURRENT (AMPS) DC (BUL147) 5 ms 10 EXTENDED SOA 1 ms 10 s 1 s I C , COLLECTOR CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 100 200 VBE(off) = 0 V 300 400 500 -1, 5 V 600 700 800 -5V TC 125C IC/IB 4 LC = 500 H 1 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and NO TAG. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sus160 tained simultaneously during turn-off with the base-to-emitter junction reverse-biased. The safe level is specified as a reverse- biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1.0 POWER DERATING FACTOR 0.8 0.6 0.4 0.2 0.0 20 THERMAL DERATING SECOND BREAKDOWN DERATING 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) Figure 17. Forward Bias Power Derating http://onsemi.com 6 BUL147 5 4 3 2 VOLTS 1 0 -1 -2 -3 -4 -5 0 VCE dyn 1 s dyn 3 s 10 9 8 7 6 5 90% IB 1 s 4 3 2 3 s 1 2 3 4 TIME 5 6 7 8 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 90% IC tfi 10% IC IB Figure 18. Dynamic Saturation Voltage Measurements +15 V 1 F 100 3W MTP8P10 Figure 19. Inductive Switching Measurements 150 3W 100 F VCE PEAK MTP8P10 RB1 Iout A VCE IB1 IB IB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 VOLTS IC(pk) = 100 mA IC PEAK MPF930 +10 V MPF930 MUR105 50 150 3W MJE210 MTP12N10 500 F RB2 1 F -Voff COMMON INDUCTIVE SWITCHING L = 200 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t2 DUTY CYCLE, D = t1/t2 10 t1 P(pk) RJC(t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 t, TIME (ms) 100 1000 Figure 20. Typical Thermal Response (ZJC(t)) for BUL147 http://onsemi.com 7 BUL147 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 F T S C Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BUL147/D |
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