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| TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features * Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: * TOI: 40 dBm * 28 dBm Psat, 27 dBm P1dB * Gain: 19 dB * Input Return Loss: -10 dB * Output Return Loss: -5 dB * Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V (Typical) * Package Dimensions: 4.5 x 4 x 1.5 mm 900 MHz Application Board Performance Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical Primary Applications 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 1.2 20 Gain (dB) 15 Gain IRL ORL IRL and ORL (dB) * * * * * Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID Product Description The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device's ideal operating point is at a drain bias of 8 V and 100 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 19 dB of gain, 28 dBm of saturated output power, and 40 dBm of output IP3. Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request. 10 5 0.6 0.7 0.8 0.9 1.0 1.1 Frequency (GHz) 29 Psat (dBm) 28 27 RoHS and Lead-Free compliant. 26 0.86 0.88 0.90 0.92 0.94 0.96 0.98 Frequency (GHz) Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A 1 TGF2960-SD Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vg Id Ig Pin Parameter Drain to Gate Voltage Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power Value 17 V 9V -5 to 0 V 390 mA -2.4 to 17.8 mA 26 dBm Notes 2/ 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 2/ Table II Recommended Operating Conditions Symbol Vd Idq Id Vg Drain Voltage Drain Current Drain Current at Psat Gate Voltage Parameter 1/ Typical Value 8V 100 mA 130 mA -1.0 V 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Table III Electrical Performance Test conditions unless otherwise specified: fin = 900 MHz, 25C; Vd = 8V, Idq = 100 mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation SYMBOL Gain P1dB OTOI PARAMETER Small Signal Gain Output Power @ 1dB Compression 3rd Order Output Intercept Point 1/ MIn 18 25.5 37 Nom 19 27 40 UNIT dB dBm dBm 1/ 900 and 910 MHz, 16 dBm output power per tone 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Table IIIa RF Characterization Table Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V, typical SYMBOL Gain PARAMETER Small Signal Gain TEST CONDITIONS 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz NOMINAL 19 16 15 -10 -10 -10 -5 -6 -6 28 28 28 27 27 27 40 39 39 3.7 4.3 4.3 UNITS dB NOTES 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 4/ 5/ 1/ 2/ 3/ IRL Input Return Loss dB ORL Output Return Loss dB Psat Saturated Output Power Output Power @ 1dB Compression Output TOI dBm P1dB dBm TOI dBm NF Noise Figure dB 1/ 2/ 3/ 4/ 5/ Using 900 MHz Application Board Using 1900 MHz Application Board tuned for maximum output power Using 2100 MHz Application Board tuned for maximum output power Using 1900 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB) Using 2100 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Table IV Power Dissipation and Thermal Properties Parameter Maximum Power Dissipation Test Conditions Tbaseplate = 70C Value Pd = 1.37 W Tchannel = 175C Tm = 8.77E+06 Hrs jc = 77 (C/W) Tchannel = 146.5C Tm = 2.06E+08 Hrs jc = 77 (C/W) Tchannel = 126C Tm = 2.48E+09 Hrs Thermal Resistance, jc Vd = 8 V Id = 100 mA Pd = 0.8 W Tbaseplate = 85C Vd = 8 V Id =130 mA Pout = 27 dBm Pd = 0.54 W Tbaseplate = 85C Thermal Resistance, jc at Psat Mounting Temperature Storage Temperature See `Typical Solder Reflow Profiles' Table -65 to 150C 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Gmax, Max Stable Gain, K factor Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 35 30 Gmax and MSG - dB 25 20 15 10 5 0 0 1 2 3 4 5 6 7 Frequency (GHz) Gmax Max Stable Gain K factor 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 K factor 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 25 Gain (dB) 20 15 10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Frequency (GHz) 0 -5 IRL and ORL (dB) -10 -15 -20 IRL ORL -25 -30 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 28 P1dB (dBm) 27 26 -40 deg C 25 deg C 85 deg C 25 0.86 0.88 0.90 0.92 0.94 0.96 Frequency (GHz) 29 Psat (dBm) 28 27 -40 deg C 25 deg C 85 deg C 26 0.86 0.88 0.90 0.92 0.94 0.96 0.98 Frequency (GHz) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A 0.98 TGF2960-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 42 OIP3 (dBm) 41 40 39 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 1.00 1.02 Frequency (GHz) 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 20 Gain (dB) 15 10 5 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Frequency (GHz) 0 -5 IRL and ORL (dB) -10 -15 -20 IRL ORL -25 -30 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Frequency (GHz) 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 28 27 P1dB (dBm) 26 25 -40 deg C 24 23 1.88 1.90 1.92 1.94 25 deg C 85 deg C 1.96 1.98 2.00 2.02 2.02 Frequency (GHz) 29 Psat (dBm) 28 27 -40 deg C 25 deg C 85 deg C 26 1.88 1.90 1.92 1.94 1.96 1.98 2.00 2.04 Frequency (GHz) 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A 2.04 TGF2960-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 41 OIP3 (dBm) 40 (Tuned for Max IP3, P1dB reduced by 1 dB) 39 38 1.92 1.94 1.96 1.98 2.00 2.00 Frequency (GHz) 40 OIP3 (dBm) 39 38 (Tuned for Max Pout) 37 1.92 1.94 1.96 1.98 Frequency (GHz) 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 20 Gain (dB) 15 10 5 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Frequency (GHz) 0 -5 IRL and ORL (dB) -10 -15 -20 IRL ORL -25 -30 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 Frequency (GHz) 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 29 28 P1dB (dBm) 27 26 25 24 23 2.06 2.08 2.10 2.12 2.14 2.16 2.18 2.20 2.20 2.22 2.22 -40 deg C 25 deg C 85 deg C Frequency (GHz) 30 29 Psat (dBm) 28 27 26 25 24 2.06 2.08 2.10 2.12 2.14 2.16 2.18 -40 deg C 25 deg C 85 deg C Frequency (GHz) 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical 40 OIP3 (dBm) 39 38 (Tuned for Max IP3, P1dB reduced by 1 dB) 37 2.07 2.09 2.11 2.13 2.15 2.17 2.19 2.19 2.21 2.21 Frequency (GHz) 40 OIP3 (dBm) 39 38 (Tuned for Max Pout) 37 2.07 2.09 2.11 2.13 2.15 2.17 Frequency (GHz) 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Electrical Schematic 2 1 2 3 Pin 1 2 3 Signal RF In (Gate) Gnd (Source) RF Out (Drain) Bias Procedures Bias-up Procedure Vg set to -2.5 V Vd set to +8 V Adjust Vg more positive until Idq is 100 mA. This will be ~ Vg = -1.0 V Apply RF signal to input Bias-down Procedure Turn off RF signal at input Reduce Vg to -2.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Mechanical Drawing B K 2 D 1 J I F E 2 3 J A C H G 3 2 1 Dim A B C D E F G H I J K Millimeters Min 1.40 4.40 2.29 3.94 Max 1.60 4.60 2.60 4.25 3.00 Center-Center 1.50 Center-Center 0.35 0.89 0.44 0.36 1.50 0.44 1.20 0.56 0.48 1.83 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 17 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Evaluation Board L2 R1 Gnd Vg C6 C8 C10 Q1 Vd C5 C7 C9 L3 C2 RF OUT RF IN C4 L4 (900 MHz Only) C3 L1 C1 R2 D / (900 MHz) D / (1900 & 2100 MHz) Evaluation Board Schematic Vg C6 C8 C10 Vd C5 C7 C9 R1 L3 Q1 L1 C1 R2 L4 (900 MHz Only) C4 C2 RF OUT Z0 = 50 RF IN Z0 = 50 C3 L2 D/ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 18 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Evaluation Board Bill of Materials Ref Des L1 C1 C2 D D D L2, L3 L4 C3,C4 C5, C6 C7, C8 C9, C10 R1 R2 Q1 (PCB) Value for Freq (MHz) 900 4.7 nH 22 pF 0.7 pF 18.8 mm 18.8 mm 36o@0.9 GHz 18.8 mm 36o@0.9 GHz 1900 1.2 nH 1.2 pF 0.6 pF 14.2 mm 14.2 mm 58o@1.9 GHz 17.2 mm 70o@1.9 GHz 50 nH 1.2 nH -150 pF 0.1 F 0.01 F 1000 pF 50 Ohms 11 Ohms 3 Ohms --5.1 Ohms -2100 1.5 nH 1.2 pF 0.6 pF 5.8 mm 5.8 mm 26o@2.1 GHz 9.6 mm 39o@2.1 GHz Description 0603 ACCU-L AVX Inductor 0603 ACCU-P AVX Capacitor 0603 ACCU-P AVX Capacitor Physical Location for C2 Physical Location for C2 for maximum power 50 Ohm Transmission Line Length D for maximum power Physical Location for C2 for maximum TOI 50 Ohm Transmission Line Length D for maximum TOI 0805 Inductor 0603 ACCU-L AVX Inductor 0603 Capacitor 0603 Capacitor 0603 Capacitor 0603 Capacitor 0805 1/8 Watt Resistor 0805 1/8 Watt Resistor TriQuint TGF2960-SD Packaged FET 28 mil thick GETEK GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 19 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Recommended Assembly Diagram 2.6 mm O CLEARANCE HOLE FOR 2-56 SOCKET HEAD CAP SCREW (2/) 7.6 X 7.6 mm COPPER AREA (3/) ARRAY OF VIAS (1/) 4.6 mm O SOLDERMASK KEEPOUT FOR 2-56 LOCKWASHER (4/) SOT-89 PACKAGE OUTLINE 1 2 3 Assembly Notes 1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter vias on 0.60 mm center to center spacing is recommended. 2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 256 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent compression damage to the PC board. 3/ Use of 1 oz copper (min) in the PC board construction is recommended. 4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the 2-56 screw and b) front of the PC board around package pin 2. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 20 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A TGF2960-SD Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate SnPb 3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec Pb Free 3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec Ordering Information Part TGF2960-SD, TAPE AND REEL Package Style SOT-89, TAPE AND REEL 21 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A |
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