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| 3SK238 Silicon N-Channel Dual Gate MOSFET Application UHF RF amplifier CMPAK-4 Features * Excellent cross modulation characteristics * Capable of low voltage operation 3 2 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Marking is "XW-". Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 10 10 35 100 125 -55 to +125 Unit V V V mA mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3SK238 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 leakage current Gate2 leakage current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS VG1S(off) VG2S(off) |yfs| Ciss Coss Crss Min 12 Typ -- Max -- Unit V Test conditions ID = 200 A, VG1S = -5 V, VG2S = -5 V IG1 = 10 A, VG2S = VDS = 0 IG2 = 10 A, VG1S = VDS = 0 VG1S = 8 V, VG2S = VDS = 0 VG2S = 8 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0, VG2S = 3 V VDS = 10 V, VG2S = 3V, ID = 100 A VDS = 10 V, VG1S = 3V, ID = 100 A VDS = 6V, VG2S = 3 V, ID = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V,ID = 10 mA, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- -- -- 100 nA -------------------------------------------------------------------------------------- -- -- 100 nA -------------------------------------------------------------------------------------- 0 -- 2 mA -------------------------------------------------------------------------------------- Gate1 to source cutoff voltage Gate2 to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure -0.7 -- +0.7 V -------------------------------------------------------------------------------------- -0.1 -- +0.8 V -------------------------------------------------------------------------------------- 14 -- -- mS -------------------------------------------------------------------------------------- 0.9 0.4 -- 1.25 0.7 0.015 1.8 1.2 0.03 pF pF pF ------------------------------------------------------------ ------------------------------------------------------------ -------------------------------------------------------------------------------------- PG NF 16 -- 19.4 2.8 -- 4 dB dB ------------------------------------------------------------ VDS = 4 V, VG2S = 3 V, ID = 10 mA, f = 900 MHz -------------------------------------------------------------------------------------- 3SK238 Maximum channel power dissipation curve Pch (mW) 200 I D (mA) 20 Typical output characteristics VG2S = 3 V 1.4 V 16 1.2 V 150 Channel Power Dissipation 12 100 Drain Current 1.0 V 8 0.8 V 0.6 V 0.4 V VG1S = 0.2 V 50 4 0 50 100 150 200 Ambient Temperature Ta (C) 0 2 4 6 Drain to Source Voltage 8 10 V (V) DS Drain current vs. Gate1 to source voltage 20 VDS = 4 V Drain current vs. gate2 to source voltage 20 VDS = 4 V 2V 1.5 V 3V 2.5 V I D (mA) Drain Current 2V 16 (mA) ID 16 12 1.5 V 8 VG2S = 1 V 12 1V 8 Drain Current 4 4 VG1S = 0.5 V 0 0 0.5 1 1.5 2 -0.5 Gate1 to Source Voltage VG1S (V) 0 1 2 3 4 5 Gate2 to Source Voltage V G2S (V) 3SK238 Forward transfer admittance vs. gate1 to source voltage Forward Transfer Admittance |y fs | (mS) 25 V DS = 6 V f = 1 kHz PG (dB) 20 VG2S = 3 V 16 20 Power gain vs. drain current 15 12 2.5 V 2V 1.5 V 1V Power Gain 10 8 VDS = 4 V VG2S = 3 V f = 900 MHz 4 8 12 16 Drain Current ID (mA) 20 5 4 0 0.4 0.8 1.2 1.6 2 Gate1 to Source Voltage VG1S (V) 0 Noise figure vs. drain current 5 V DS = 4 V VG2S = 3 V f = 900 MHz NF (dB) Noise Figure 4 3 2 1 0 4 8 12 16 Drain Current I D (mA) 20 |
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