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STM4886
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
30V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
ID
17A
RDS(ON) (m) Max
5 @ VGS=10V 8 @ VGS=4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit 30 20 TA=25C 17 68 181 TA=25C 2.5 -55 to 150
Units V V A A mJ W C
-Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
50
C/W
Details are subject to change without notice.
Mar,24,2008
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STM4886
Ver 1.0
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=24V , VGS=0V
Min 30
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance
VGS= 20V , VDS=0V
1 100 1 1.7 3.8 5.8 20 2500 640 440 52 85 82 65 58 28 5.4 17 0.73 1.2 3 5 8
uA nA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC V
VDS=VGS , ID=250uA VGS=10V , ID=17A VGS=4.5V , ID=13.5A VDS=15V , ID=17A
Forward Transconductance DYNAMIC CHARACTERISTICS c
Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge
VDS=15V,VGS=0V f=1.0MHz
VDD=15V ID=17A VGS=10V RGEN=6 ohm VDS=15V,ID=17A,VGS=10V VDS=15V,ID=17A,VGS=4.5V
Gate-Source Charge VDS=15V,ID=17A, VGS=10V Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS=0V,IS=17A
Notes
_ a.Surface Mounted on FR4 Board,t < 10sec. _ _ 300us, Duty Cycle < 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=1.25mH,RG=25,IAS=17A,VDD = 30V.(See Figure13)
Mar,24,2008
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STM4886
Ver 1.0
25
V G S = 4.5V V G S = 10V
20
ID, Drain Current(A)
V G S =3 V
ID, Drain Current(A)
20
16
15
12 125 C 8 25 C 4 0 -55 C
10 5
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0
0.7
1.4
2.1
2.8
3.5
4.2
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
7 VG S =4.5V 6
Figure 2. Transfer Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0
V G S =4.5V ID=13.5A V G S =10V ID= 17 A
RDS(on)(m )
5 4 VG S =10V 3 2 1
1
5
10
15
20
25
RDS(on), On-Resistance Normalized
0
25
50
75
100
125
150 T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Vth, Normalized Gate-Source Threshold Voltage
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50
V DS =V G S ID=250uA
75 100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
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STM4886
Ver 1.0
15.0 12.5
20.0
Is, Source-drain current(A)
ID=17 A
10.0 5.0
25 C
RDS(on)(m )
10.0 7.5 5.0 2.5 0 75 C
25 C
125 C
125 125 C
75 C
1.0
0 2 4 6 8 10
0
0.24
0.48
0.72
0.96
1.20
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
3600
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
3000
C, Capacitance(pF)
Ciss 2400 1800 1200 Coss 600 Crss 0 0 5 10 15 20 25 30
8 6 4 2 0 0
VDS = 15V ID=17 A
9
18
27
36
45
54
63 72
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
6000
60
ID, Drain Current(A)
RD
Tr
ON S(
)L
im
it
10 0u s
Switching Time(ns)
1000 600
TD(off) Tf
10
10 1s
DC
1m 10 0m ms
s
100
TD(on)
s
1 VGS =10V S ingle P ulse T A=25 C 1
10 1 6 10
V DS =15V ,ID=17A V G S =10V
0.1 0.1
60 100 300 600
10
30 50
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Mar,24,2008
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STM4886
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
D R IVE R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit F igure 13a.
Unclamped Inductive Waveforms F igure 13b.
1
0.5
Normalized Transient Thermal Resistance
0.2
0.1
0.1 0.05 0.02 0.01 P DM
0.01
Single Pulse
1. 2. 3. 4.
t1 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
0.001 0.0000 1
0.000 1
0.001
0.01
0. 1
1
10
100
1000
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Mar,24,2008
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STM4886
Ver 1.0
PACKAGE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
Mar,24,2008
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STM4886
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:
PACKAGE SOP 8N 150 A0
6.40
B0
5.20
K0
2.10
D0
1.5 (MIN)
D1
1.5 + 0.1 - 0.0
E
12.0 0.3
E1
1.75
E2
5.5 0.05
P0
8.0
P1
4.0
P2
2.0 0.05
T
0.3 0.05
SO-8 Reel
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
V
Mar,24,2008
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