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Agilent CNY17-x Phototransistor Optocoupler High Collector-Emitter Voltage Type
Data Sheet
Description The CNY17 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Collector-emitter voltage is above 70 V. Response time, tr, is typically 5 s and minimum CTR is 40% at input current of 10 mA.
Ordering Information Specify part number followed by Option Number (if desired). CNY17-3-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option W00 = 0.4" Lead Spacing Option 300 = Lead Bend SMD Option 500 = Tape and Reel Packaging Option
Functional Diagram
PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4
ANODE 1 + IF 6 BASE
Features * High collector-emitter voltage (VCEO = 70 V) * High input-output isolation voltage (Viso = 5000 Vrms) * Current Transfer Ratio (CTR: min. 40% at IF = 10 mA, VCE = 5 V) * Response time (tr: typ., 5 s at VCC = 10 V, IC = 2 mA, RL = 100 ) * Dual-in-line package * UL approved * CSA approved * IEC/EN/DIN EN 60747-5-2 approved * Options available: - Leads with 0.4" (10.16 mm) spacing (W00) - Leads bends for surface mounting (300) - Tape and reel for SMD (500) - IEC/EN/DIN EN 60747-5-2 approvals (060) Applications * System appliances, measuring instruments * Signal transmission between circuits of different potentials and impedances * Feedback circuit in power supply
Schematic
VF CATHODE - 2 IC 5 COLLECTOR
1 1. ANODE 2. CATHODE 3. NC
2
3 4. EMITTER 5. COLLECTOR 6. BASE
4
EMITTER
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings CNY17-X-000E
MODEL NO. *2 7.3 0.5 (0.287) 7.62 0.3 (0.3)
LEAD FREE
A CNY17 Y Y WW
3.5 0.5 (0.138) 6.5 0.5 (0.256) 2.8 0.5 (0.110) 3.3 0.5 (0.13) 0.5 0.1 (0.02) 0.5 TYP. (0.02)
ANODE DATE CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54 0.25 (0.1)
0.26 (0.010) 7.62 ~ 9.98
CNY17-X-060E
MODEL NO. *2 7.3 0.5 (0.287) 7.62 0.3 (0.3)
LEAD FREE
A CNY17- V
Y Y WW
3.5 0.5 (0.138) 6.5 0.5 (0.256) 2.8 0.5 (0.110) 3.3 0.5 (0.13) 0.5 0.1 (0.02) 0.5 TYP. (0.02)
ANODE DATE CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54 0.25 (0.1)
0.26 (0.010) 7.62 ~ 9.98
CNY17-X-W00E
7.3 0.5 (0.287) 7.62 0.3 (0.3)
MODEL NO. *2
LEAD FREE
A CNY17 Y Y WW
3.5 0.5 (0.138) 6.5 0.5 (0.256) 2.8 0.5 (0.110) 0.5 0.1 (0.02) 2.3 0.5 (0.09) 0.26 (0.010) 10.16 0.5 (0.4) 6.9 0.5 (0.272)
ANODE DATE CODE *1
2.54 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES)
2
CNY17-X-300E
MODEL NO. *2 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.35 +0.15/-0.10 (0.014)
LEAD FREE
A CNY17 Y Y WW
3.5 0.5 (0.138) 6.5 0.5 (0.256) 1.2 0.1 (0.047) 2.54 0.25 (0.1) 0.35 0.25 (0.014) 1.0 0.25 (0.039) 10.16 0.3 (0.4)
ANODE DATE CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
Temperature (C)
Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above.
30 seconds 250C 217C 200C 260C (Peak Temperature)
150C 60 sec
25C 60 ~ 150 sec 90 sec Time (sec) 60 sec
Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) -55C to +150C -55C to +100C 260C for 10 s 60 mA 6V 100 mW 150 mA 70 V 6V 70 V 150 mW 250 mW 5000 Vrms
3
Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio CNY17-1 CNY17-2 CNY17-3 CNY17-4 Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR Min. - - - - 70 6 70 4 40 63 100 160 - - - 1 x 1011 - Typ. 1.4 - - - - - - - - - - - - 5 5 - - Max. 1.7 10 100 50 - - - 32 80 125 200 320 0.3 10 10 - 2 Units V A pF nA V V V mA % Test Conditions IF = 60 mA VR = 6 V V = 0, f = 1 MHz VCE = 10 V IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 5 V
VCE(sat) tr tf Riso Cf
V s s pF
IF = 10 mA, IC = 2.5 mA VCE = 5 V, IC = 10 mA RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz
* CTR =
IC x 100% IF
PC - COLLECTOR POWER DISSIPATION - mW
80
IF - FORWARD CURRENT - mA
200
60
160 150
40
100
20
50
0 -55
-25
0
25
50
75
100 125
0 -55
-25
0
25
50
75
100 125
TA - AMBIENT TEMPERATURE - C
TA - AMBIENT TEMPERATURE - C
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs. temperature.
Figure 3. Frequency response.
4
CTR - CURRENT TRANSFER RATIO - %
500
IF - FORWARD CURRENT - mA
200 180 160 140 120 100 80 60 40 20 0 0
45
IC - COLLECTOR CURRENT - mA
VCE = 5 V TA = 25C
TA = 75C 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 TA = 50C TA = 25C TA = 0C TA = -25C
40 IF = 30 mA 35 30 25 20 15 10 5 0 0 2 IF = 10 mA IF = 5 mA IF = 2 mA 4 6 IF = 20 mA
TA = 25C PC (MAX.)
RBE =
100 k 500 k 2 5 10 20 50
8
10
VF - FORWARD VOLTAGE - V
IF - FORWARD CURRENT - mA
VCE - COLLECTOR-EMITTER VOLTAGE - V
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward current.
Figure 6. Collector current vs. collectoremitter voltage.
RELATIVE CURRENT TRANSFER RATIO - %
ICEO - COLLECTOR DARK CURRENT - A
150
VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V
IF = 10 mA VCE = 5 V
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -55
IF = 10 mA IC = 2.5 mA
10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-13 -30 0 20 40 60 80 100 VCE = 10 V
100
50
0 -55
-25
0
25
50
75
100
-25
0
25
50
75
100
TA - AMBIENT TEMPERATURE - C
TA - AMBIENT TEMPERATURE - C
TA - AMBIENT TEMPERATURE - C
Figure 7. Relative current transfer ratio vs. temperature.
Figure 8. Collector-emitter saturation voltage vs. temperature.
Figure 9. Collector dark current vs. temperature.
10
VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V
RESPONSE TIME - s
5
IF = 10 mA VCC = 5 V TA = 25C tr tf
6 TA = 25C 5 4 3 2 1 0 IC = 0.5 mA IC = 1 mA IC = 2 mA IC = 3 mA IC = 5 mA
2
1
0.5 0.02
0.05
0.1
0.2
0.5
0
2.5
5.0
7.5
10.0
12.5
RL - LOAD RESISTANCE - k
IF - FORWARD CURRENT - mA
Figure 10. Response time vs. load resistance.
Figure 11. Collector-emitter saturation voltage vs. forward current.
5
Test Circuit for Response Time
VCC
Test Circuit for Frequency Response
VCC
RD INPUT
RL OUTPUT
RD
RL OUTPUT
~
INPUT
OUTPUT
10%
90%
td tr
ts tf
www.agilent.com/semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0290EN October 27, 2004 5989-1736EN

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