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A Product Line of Diodes Incorporated
ZXTC4591AMC
COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
Features
* NPN Transistor VCEO = 40 RSAT = 195 m IC = 2.5A PNP Transistor VCEO = -40V RSAT = 350 m IC = -2A Low Saturation Voltage (500mV max @ 1A) IC = 2.5A Continuous Collector Current hFE characterized up to 2A
Mechanical Data
* * * * * * * Case: DFN3020B-8 UL Flammability Rating 94V-0 Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate)
*
* * *
Applications
* * * * DC - DC Converters Power switches Motor control LED Backlighting circuits
DFN3020B-8
TOP VIEW
Device Symbol
Pin Configuration
Ordering Information
Product ZXTC4591AMCTA
Notes:
Status Active
Package DFN3020B-8
Marking 91A
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 3000
1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com
Marking Information
91A = Product type Marking Code Dot denotes Pin 1
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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ZXTC4591AMC
Maximum Ratings
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current(a)(f) Continuous Collector Current(b)(f) Base Current Symbol VCBO VCEO VEBO ICM IC IC IB NPN 40 40 5 3 2 2.5 300 PNP -40 -40 -5 -3 -1.5 -2.0 Unit V V V A A A mA
Thermal Characteristics
Characteristic Power Dissipation at TA = 25C (a) (f) Linear Derating Factor Power Dissipation at TA = 25C (b) (f) Linear Derating Factor Power Dissipation at TA = 25C (c) (f) Linear Derating Factor Power Dissipation at TA = 25C (d) (f) Linear Derating Factor Power Dissipation at TA = 25C (d) (g) Linear Derating Factor Power Dissipation at TA = 25C (e) (g) Linear Derating Factor Junction to Ambient (a) (f) Junction to Ambient (b) (f) Junction to Ambient (c) (f) Junction to Ambient (d) (f) Junction to Ambient (d) (g) Junction to Ambient (e) (g) Junction Temerature Storage Temperature Range
Notes:
Symbol PD PD PD PD PD PD RJA RJA RJA RJA RJA RJA TJ TSTG
Value 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 83.3 51 125 111 73.5 41.7 150 -55 to +150
Unit W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C/W C/W C/W C/W C/W C/W C C
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power.
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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ZXTC4591AMC
Thermal Characteristics and Derating information
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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Electrical Characteristics, NPN Transistor (at TA = 25C unless otherwise specified)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Static Forward Current Transfer Ratio (Note 3) Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Turn-On Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Output Capacitance Transition Frequency
Notes: 3. Measured under pulsed conditions.
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES hFE
Min 40 40 5 300 300 200 35 150
Typ -
Max 100 100 100 900 300 500 1.0 1.1 10 -
Unit V V V nA nA nA -
VCE(sat) VBE(on) VBE(sat) Cobo fT
mV V V pF MHz
Test Condition IC = 100A IC = 10mA IE = 100A VCB = 30V VEB = 4V VCE = 30V IC = 1mA, VCE = 5V IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V IC = 0.5A, IB = 50mA IC = 1A, IB = 100mA IC = 1A, VCE = 5V IC = 1A, IB = 100mA VCB = -10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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NPN Characteristics
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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Electrical Characteristics, PNP Transistor @TA = 25C unless otherwise specified
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Static Forward Current Transfer Ratio (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES Min -40 -40 5 300 300 250 160 30 150 Typ Max -100 -100 -100 800 -200 -350 -500 -1.0 -1.1 10 Unit V V V nA nA nA Test Condition IC = -100A IC = -10mA IE = -100A VCB = -30V VEB = -4V VCE = -30V IC = -1mA, VCE = -5V IC = -100mA, VCE = -5V IC = -500mA, VCE = -5V IC = -1A, VCE = -5V IC = -2A, VCE = -5V IC = -0.1A, IB = -1mA IC = -0.5A, IB = -20mA IC = -1A, IB = -100mA IC = -1A, VCE = -5V IC = -1A, IB = -50mA VCB = -10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz
hFE
-
Collector-Emitter Saturation Voltage (Note 4) Base-Emitter Turn-On Voltage(Note 4) Base-Emitter Saturation Voltage(Note 4) Output Capacitance Transition Frequency
Notes: 4. Measured under pulsed conditions.
VCE(sat) VBE(on) VBE(sat) Cobo fT
mV V V pF MHz
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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PNP Characteristics
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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ZXTC4591AMC
Package Outline Dimensions
A A1 D
A3
D4 E Z L b D2
D4
E2 e
DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm
Suggested Pad Layout
C
X Y1
G Y2
G1
Y
X1
Dimensions C G G1 X X1 Y Y1 Y2
Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
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ZXTC4591AMC
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
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