schottky barrier chips for hybrid integrated circuits technical data features ? thermocompression/ thermosonically bondable ? gold metallization ? silicon nitride passivation ? uniform electrical characteristics ? batch matched versions available ? planar construction ? available in many electrical selections ? ideal for hybrid integrated circuits HSMS-0005/06 hsms-8002/12 chip dimensions d y z x 2 x dimensions d x y z top contact notes: 1. dimensions in microns (1/1000 inch). 2. dimension tolerance is 30 . 3. all contact metallization is gold. part no. hsms- -0006/-8002 75 (3) 250 (10) 275 (11) 150 (8) anode -0005 55 (2) 250 (10) 250 (10) 150 (6) cathode x 2 description/applications these schottky chips are de- signed for hybrid applications at dc through k-band frequencies. the passivated planar construc- tion of these schottky chips provides a wide temperature range capability combined with broad bandwidth performance. a variety of chips are provided which are optimized for various analog and digital applications. typical applications of schottky chips are mixing, detecting, switching, gating, sampling, and wave shaping. this series of schottky diode chips are specifically designed for analog and digital hybrid appli- cations requiring thermosonic or thermocompression bonding techniques. the large bonding pad allows easy bonding. the top metallization is a layer of gold deposited on adhesive metal layers for a tarnish-free surface that allows either thermosonic or thermocompression bonding techniques. the bottom metalli- zation is also gold, suitable for epoxy or eutectic die attach methods.
2 absolute maximum ratings, t a = 25 c symbol parameter units hsms-8002 HSMS-0005 p t total device dissipation, measured in an mw 75 75 infinite heatsink. derate linearly to zero at maximum rated temperature p iv peak inverse voltage v 4.0 2.0 tj junction temperature (maximum) c 150 200 t stg storage temp. range c C65 to 150 C65 to 200 t op operating temperature c C65 to 150 C65 to 200 note: operation in excess of any one of these conditions may result in permanent damage to the device. dc electrical specifications at t a = 25 c schottky barrier chips for microwave and rf mixers nearest minimum maximum maximum maximum part batch equivalent breakdown forward forward maximum dynamic number matched [1] packaged voltage voltage voltage capacitance resistance hsms- hsms- part: hsms- v br (v) v f (mv) v f (mv) c t (pf) r d ( w ) [2] 8002 8012 8101 4 250 350 0.16 14 test d v f = 15 mv i r = 10 m a i f = 1 ma v r = 0 v i f = 5 ma conditions i f = 1 ma f = 1.0 mhz notes: 1. standard batch match size, 100 units. 2. to obtain r s , subtract 26/5 = 5.2 w . typical typical typical part number conversion loss if impedance typical swr tangential sensitivity hsms- l c (db) z if ( w )t ss (dbm) 8002 5.5 150 1.2:1 - 46 f = 10 ghz test f = 16 ghz bw = 2 mhz conditions dc load resistance = 0 w , lo power = 1 mw i bias = 20 m a rf electrical parameters at t a = 25 c
3 nearest maximum minimum typical part number equivalent packaged forward voltage breakdown voltage capacitance hsms- part no. hsms- v f (mv) v br (v) c t (pf) 0005 2850 250 0.20 0006 2860 350 4.0 0.17 test i f = 1 ma i r = 10 m av r = 0.5 v, conditions f = 1 mhz dc electrical specifications at t a = 25 c schottky barrier chips for microwave and rf detectors typical rf electrical parameters at t a = 25 c voltage sensitivity part number g (mv/ m w) video resistance hsms- dc bias 915 mhz 2.45 ghz 5.8 ghz r v (k w ) 0005 zero 40 30 22 8.0 0006 5 m a 40 32 25 5.5 test conditions p in = -40 dbm r l = 100 k w spice parameters parameter units hsms-8002 HSMS-0005 hsms-0006 b v v 7.0 3.8 6.0 c j0 pf 0.16 0.16 0.17 e g ev 0.69 0.69 0.69 i bv a 10e - 5 10e - 5 10e - 5 i s a 4.6 x 10e - 8 3 x 10e - 6 3 x 10e - 8 n 1.08 1.15 1.10 r s w 5.0 20 7.0 p b v 0.65 0.65 0.65 p t 222 m 0.5 0.5 0.5 equivalent circuit model c jo r s r j r j .026 i s + i b i b = bias current in a
assembly and handling procedures for schottky chips 1. storage devices should be stored in a dry nitrogen purged desiccator or equivalent. 2. cleaning if required, surface contamination may be removed with electronic grade solvents such as freon (t.f. or t.m.c.), acetone, deionized water, and methanol used singu- larly or in combinations. typical cleaning times per solvent are one to three minutes. di water and methanol should be used (in that order) in the final cleansing. final drying can be accomplished by placing the cleaned dice on clean filter paper and drying with an infrared lamp for 5 C10 minutes. acids such as hydrofluoric (hf), nitric (hno 3 ) and hydrochloric (hcl) must not be used. the effects of cleaning methods / solutions should be verified on small samples prior to submitting the entire lot. following cleaning, dice should either be used in assembly (typically within a few hours) or stored in clean containers in an inert atmosphere or a vacuum chamber. 3. die attach a. eutectic eutectic die attach can be accom- plished by scrubbing the die with a preform on the header. (note times and temperature utilized vary depending on the type of preform.) for example, 310 c is suitable for a au/sn preform. b. epoxy for epoxy die-attach, conducive silver-filler epoxies are recom- mended. this method can be used for all agilent schottky chips. 4. wire bonding thermocompression wire bond- ing is recommended. suggested wire is pure gold, 0.7 to 1.5 mil diameter. www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-8855e (11/99)
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