maximum ratings and thermal characteristics (t c = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (1) i d 78 a pulsed drain current i dm 180 maximum power dissipation t c = 25? p d 70 w t c = 70? 45 operating junction and storage temperature range t j , t stg ?5 to 150 ? junction-to-case thermal resistance r jc 1.8 ?/w junction-to-ambient thermal resistance (2) r ja 40 ?/w notes: (1) maximum dc current limited by the package (2) 1-in 2 2oz. cu pcb mounted GFD50N03A n-channel enhancement-mode mosfet v ds 30v r ds(on) 7 m ? i d 78a 5/1/01 features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?specially designed for low voltage dc/dc converters ?fast switching for high efficiency mechanical data case: jedec to-252 molded plastic body terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals weight: 0.011oz., 0.4g 0.190 (4.826) 0.243 (6.172) 0.063 (1.6) 0.165 (4.191) 0.100 (2.54) 0.118 (3.0) 0.245 (6.22) 0.235 (5.97) 0.040 (1.02) 0.025 (0.64) 0.410 (10.41) 0.380 (9.65) 0.170 (4.32) min. 0.214 (5.44) 0.206 (5.23) 0.265 (6.73) 0.255 (6.48) 0.023 (0.58) 0.018 (0.46) 0.094 (2.39) 0.087 (2.21) 0.204 (5.18) 0.156 (3.96) 0.197 (5.00) 0.177 (4.49) 0.035 (0.89) 0.028 (0.71) gs d 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.020 (0.51) min. 0.060 (1.52) 0.045 (1.14) 0.050 (1.27) 0.035 (0.89) to-252 (dpak) dimensions in inches and (millimeters) mounting pad layout g d s t rench g en f et new product
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 1.0 a on-state drain current (1) i d(on) v ds 5v, v gs = 10v 50 a drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 15a 6.2 7 m ? v gs = 4.5v, i d = 13a 8.5 10 forward transconductance (1) g fs v ds = 15v, i d = 15a 50 s dynamic total gate charge q g v ds =15v , v gs =5v, i d =15a 31 43 60 84 gate-source charge q gs v ds = 15v, v gs = 10v 9 nc gate-drain charge q gd i d = 15a 8.5 turn-on delay time t d(on) 13 26 turn-on rise time t r v dd = 15v, r l = 15 ? 16 29 turn-off delay time t d(off) i d ? 1a, v gen = 10v 94 132 ns turn-off fall time t f r g = 6 ? 38 57 input capacitance c iss v gs = 0v 3240 output capacitance c oss v ds = 15v 625 pf reverse transfer capacitance c rss f = 1.0mh z 285 source-drain diode max diode forward current i s 20 a diode forward voltage (1) v sd i s = 20a, v gs = 0v 0.85 1.3 v notes: (1) pulse test; pulse width 300 s, duty cycle 2% GFD50N03A n-channel enhancement-mode mosfet g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
0 10 20 30 50 60 70 01 2 3 4 fig. 1 ?output characteristics 0 0.0025 0.005 0.0075 0.01 0.0125 0.015 02040506080 fig. 4 ?on-resistance vs. drain current 0 10 20 40 30 50 80 60 12345 fig. 2 ?transfer characteristics 40 v gs = 2.5v 0.8 0.6 1.4 1.6 1.2 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 15a v gs = 4.5v 25 c v gs = 10v t j = 125 c --55 c 3.0v 3.5v 6.0v 4.0v v ds = 10v 10v 0.6 1.4 1.2 1.6 1.8 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 3 ?threshold voltage i d = 250 a i d -- drain-to-source current (a) v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) v (th) -- gate-to-source threshold voltage (v) t j -- junction temperature ( c) 80 5.0v 2 10 70 30 70 4.5v ratings and characteristic curves (t a = 25 c unless otherwise noted) GFD50N03A n-channel enhancement-mode mosfet
0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 30 20 25 fig. 8 capacitance c iss c rss c oss f = 1mh z v gs = 0v 0 2 4 6 8 10 01020 40 30 fig. 7 gate charge 50 60 v ds = 15v i d = 15a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j = 125 c fig. 9 source-drain diode forward voltage 25 c --55 c v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) q g -- gate charge (nc) v gs -- gate-to-source voltage (v) c -- capacitance (pf) v ds -- drain-to-source voltage (v) 0 0.005 0.01 0.02 0.015 0.025 0.03 246810 fig. 6 on-resistance vs. gate-to-source voltage i d = 15a t j = 125 c 25 c r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) ratings and characteristic curves (t a = 25 c unless otherwise noted) GFD50N03A n-channel enhancement-mode mosfet
ratings and characteristic curves (t a = 25 c unless otherwise noted) GFD50N03A n-channel enhancement-mode mosfet fig. 11 transient thermal impedance fig. 13 maximum safe operating area v ds -- drain-source voltage (v) 0.1 1 1 10 100 1000 10 100 fig. 12 power vs. pulse duration v gs = 10v single pulse r jc = 1.8 c/w t a = 25 c r ds(on) limit 100 s 1ms 10ms dc 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 110 37 36 38 40 43 39 -- 50 -- 25 25 50 75 100 125 0 fig. 10 breakdown voltage vs. junction temperature 150 i d = 250 a bv dss -- breakdown voltage (v) t j -- junction temperature ( c) 41 42 i d -- drain current (a)
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