SI4806DY vishay siliconix document number: 70657 s-00652erev. c, 27-mar-00 www.vishay.com faxback 408-970-5600 2-1 n-channel 30:1 ratio dual-gate 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) gate 1 30 0.022 @ v gs = 10 v 7.7 gate 1 30 0.03 @ v gs = 4.5 v 6.4 gate 2 30 0.25 @ v gs = 10 v 2.0 gate 2 0.40 @ v gs = 4.5 v 1.5 d g 1 s n-channel mosfet so-8 5 6 7 8 top view 2 3 4 1 g 2 nc g 1 d sd sd g 2
parameter symbol gate 1 gate 2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 7.7 6.4 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.4 6.0 a pulsed drain current i dm 40 4.0 a continuous source current (diode conduction) a i s 2 maximum power dissipation a t a = 25 c p d 2.3 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 55 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI4806DY vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70657 s-00652erev. c, 27-mar-00
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