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savantic semiconductor product specification silicon pnp power transistors 2sA1279 d escription with to-220f package low collector saturation voltage applications high current switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -5 a i cm collector current-peak -8 a p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2sA1279 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-3a;i b =-0.15a -0.4 v v besat base-emitter saturation voltage i c =-3a;i b =-0.15a -1.2 v i cbo collector cut-off current v cb =-60v;i e =0 -1 a i ebo emitter cut-off current v eb =-7v; i c =0 -1 a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-3a ; v ce =-1v 30 f t transition frequency i c =-1a ; v ce =-4v 60 mhz c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 200 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2sA1279 package outline fig.2 outline dimensions

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