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elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 1 of 28 1 3 2 6 4 5 q 1 q 2 r 1 r 2 r 1 r 2 rohs compliant product a suffix of -c indicates halogen-free. description the bias resistor transistor (brt) contains a singl e transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the smun5 311dw series, two complementary brt devices are housed in the sot?363 package which is ideal for low power surface mount applications where boar d space is at a premium. feature simplifies circuit design reduces board space reduces component count available in 8 mm, 7 inch/3000 unit tape and reel the devices are pb-free maximum ratings and thermal characteristics (t a = 25c unless otherwise noted, common for q1 and q 2, minus sign for q1(pnp) omitted) parameter symbol value unit collector - base voltage v cbo 50 vdc collector - emitter voltage v ceo 50 vdc collector currrent C continuous i c 100 madc one junction heated thermal characteristics total device dissipation, t a =25c 187(1) 256(2) mw total device dissipation, derate above 25c p d 1.5(1) 2.0(2) mw/c thermal resistance, junction to ambient r ja 670(1) 490(2) c/w both junction heated thermal characteristics total device dissipation, t a =25c 250(1) 385(2) mw total device dissipation, derate above 25c p d 2.0(1) 3.0(2) mw/c thermal resistance, junction to ambient r ja 493(1) 325(2) c/w thermal resistance, junction to lead r jl 188(1) 208(2) c/w junction temperature & storage temperature t j ,t stg -55~150 c note: 1. fr-4 @ minimum pad 2. fr-4 @ 1.0 x 1.0 inch pad sot-363 b l f h c j d g k a e millimeter millimeter ref. min. max. ref. min. m ax. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 2 of 28 electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test condition off characteristics collector-base breakdown voltage v (br)cbo 50 - - v i c =10 a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - v i c =2ma, i b = 0 collector-base cutoff voltage i cbo - - 100 na v cb =50v, i e =0 collector-emitter cutoff current i ceo - - 500 na v ce =50v, i b =0 smun5311dw - - 0.5 SMUN5312DW - - 0.2 smun5313dw - - 0.1 smun5314dw - - 0.2 smun5315dw - - 0.9 smun5316dw - - 1.9 smun5330dw - - 4.3 smun5331dw - - 2.3 smun5332dw - - 1.5 smun5333dw - - 0.18 smun5334dw - - 0.13 emitter-base cutoff current smun5335dw i ebo - - 0.2 ma v eb =6v, i c =0 on characteristics 3 smun5311dw - - 0.25 SMUN5312DW - - 0.25 smun5313dw - - 0.25 smun5314dw - - 0.25 smun5335dw - - 0.25 i c =10ma, i b =0.3ma smun5330dw - - 0.25 smun5331dw - - 0.25 i c =10ma, i b =5ma smun5315dw - - 0.25 smun5316dw - - 0.25 smun5332dw - - 0.25 smun5333dw - - 0.25 collector-emitter saturation voltage smun5334dw v ce(sat) - - 0.25 vdc i c =10ma, i b =1ma smun5311dw 35 60 - SMUN5312DW 60 100 - smun5313dw 80 140 - smun5314dw 80 140 - smun5315dw 160 350 - smun5316dw 160 350 - smun5330dw 3.0 5.0 - smun5331dw 8.0 15 - smun5332dw 15 30 - smun5333dw 80 200 - smun5334dw 80 150 - dc current gain smun5335dw h fe 80 140 - v ce =10v, i c =5ma note: 3. pulse test: pulse width <300 s, duty cycle<2.0%
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 3 of 28 electrical characteristics (t a = 25c unless otherwise noted)(continued) parameter symbol min. typ. max. unit test condition on characteristics 3 smun5311dw - - 0.2 SMUN5312DW - - 0.2 smun5314dw - - 0.2 smun5315dw - - 0.2 smun5316dw - - 0.2 smun5330dw - - 0.2 smun5331dw - - 0.2 smun5332dw - - 0.2 smun5333dw - - 0.2 smun5334dw - - 0.2 smun5335dw - - 0.2 v cc =5v, v b =2.5v, r l =1 k output voltage(on) smun5313dw v ol - - 0.2 vdc v cc =5v, v b =3.5v, r l =1 k smun5311dw 4.9 - - SMUN5312DW 4.9 - - smun5313dw 4.9 - - smun5314dw 4.9 - - smun5333dw 4.9 - - smun5334dw 4.9 - - smun5335dw 4.9 - - v cc =5v, v b =0.5v, r l =1 k smun5330dw 4.9 - - v cc =5v, v b =0.05v, r l =1 k smun5315dw 4.9 - - smun5316dw 4.9 - - smun5331dw 4.9 - - output voltage(off) smun5332dw v oh 4.9 - - vdc v cc =5v, v b =0.25v, r l =1 k smun5311dw 7.0 10 13 SMUN5312DW 15.4 22 28.6 smun5313dw 32.9 47 61.1 smun5314dw 7.0 10 13 smun5315dw 7.0 10 13 smun5316dw 3.3 4.7 6.1 smun5330dw 0.7 1.0 1.3 smun5331dw 1.5 2.2 2.9 smun5332dw 3.3 4.7 6.1 smun5333dw 3.3 4.7 6.1 smun5334dw 15.4 22 28.6 input resistor smun5335dw r1 1.54 2.2 2.86 k smun5311dw 0.8 1.0 1.2 SMUN5312DW 0.8 1.0 1.2 smun5313dw 0.8 1.0 1.2 smun5314dw 0.17 0.21 0.25 smun5315dw - - - smun5316dw - - - smun5330dw 0.8 1.0 1.2 smun5331dw 0.8 1.0 1.2 smun5332dw 0.8 1.0 1.2 smun5333dw 0.055 0.1 0.185 smun5334dw 0.38 0.47 0.56 resistor ratio smun5335dw r1/r2 0.038 0.047 0.056 note: 3. pulse test: pulse width <300 s, duty cycle<2.0%
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 4 of 28 figure 1. de rating curve 300 200 150100 50 0 50 0 50 100 150 t a , ambient temperature ( c) r ja = 490 c/w 250 p d , power dissipation (mw) all smun531 1dw series devices device marking and resistor values device marking r1(k) r2(k) device marking r1(k) r2(k) smun5311dw 11 10 10 smun5330dw 30 1.0 1.0 SMUN5312DW 12 22 22 smun5331dw 31 2.2 2.2 smun5313dw 13 47 47 smun5332dw 32 4.7 4.7 smun5314dw 14 10 47 smun5333dw 33 4.7 47 smun5315dw 15 10 smun5334dw 34 22 47 smun5316dw 16 4.7 smun5335dw 35 2.2 47 characteristic curves
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 5 of 28 characteristic curves typical electrical characteristics smun531 1dw npn transist or v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02 0 30 i c , collect or current (ma) 10 1 0.1 t a = - 25 c 75 c 25 c 40 50 figure 3. dc cu rrent gain figure 4. output capacitance 1 0.1 0.01 0.001 02 0 40 50 i c , collect or current (ma) 1000 100 10 1 10 100 i c , collect or current (ma) t a = 7 5 c 25 c -25 c t a = - 25 c 25 c figure 5. ou tput current versus input v oltage 75 c 25 c t a = - 25 c 100 10 1 0.1 0.01 0.001 01 2 34 v in , input vol t age (vol ts) 5678 9 10 figure 6. in put voltage versus output current 50 01 0 20 30 40 4 3 1 20 v r , reverse bias vol t age (vol ts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce(sat) , collect or voltage (vol ts)
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 6 of 28 characteristic curves typical electrical characteristics smun531 1dw pnp transist or v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input vol t age (vol ts) t a = - 25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 8. dc cu rrent gain figure 9. output capacitance figure 10. output current versus input voltage figure 11. input voltage versus output current 0.01 20 i c , collect or current (ma) 0.1 1 0 40 50 1000 1 10 100 i c , collect or current (ma) t a = 7 5 c -25 c 100 10 0 i c , collect or current (ma) 0.1 1 10 100 10 20 30 40 50 t a = - 25 c 25 c 75 c 75 c i c /i b = 10 50 01 0 20 30 40 43 1 2 v r , reverse bias vol t age (vol ts) c ob , capacitance (pf) 0 t a = - 25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhzl e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collect or voltage (vol ts) 30
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 7 of 28 characteristic curves typical electrical characteristic s SMUN5312DW npn transistor v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input v oltage 1000 10 i c , collect or current (ma) t a = 7 5 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input vol t age (vol ts) 10 1 0.1 0.01 0.001 2468 10 t a = - 25 c 0 i c , collect or current (ma) 100 t a = - 25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 16 . input v oltage versus output current 0.001 t a = - 25 c 75 c 25 c 0.01 0.1 1 40 i c , collect or current (ma) 0 20 50 50 0 10 2 03 04 0 43 2 1 0 v r , reverse bias vol t age (vol ts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collect or voltage (vol ts)
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 8 of 28 characteristic curves typical electrical characteristic s SMUN5312DW pnp transistor v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c figure 18. dc current gain 1000 10 i c , collect or current (ma) 100 10 1 100 figure 19 . output capacitance i c , collect or current (ma) 0 10 20 30 v o = 0.2 v t a = - 25 c 75 c 100 10 1 0.1 40 50 figure 20 . output current versus input v oltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input vol t age (vol ts) 5 6 7 8 9 10 figure 21 . input v oltage versus output current 0.01 0.1 1 10 40 i c , collect or current (ma) 0 20 50 75 c 25 c t a = - 25 c 50 0 10 2 03 04 0 43 2 1 0 v r , reverse bias vol t age (vol ts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a = 7 5 c f = 1 mhzl e = 0 v t a = 25 c 75 c 25 c t a = - 25 c v o = 5 v v ce(sat) , collect or voltage (vol ts)
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 9 of 28 characteristic curves typical electrical characteristic s smun5313dw npn transistor v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 22. v ce(sat) versus i c 0 2 468 10 100 10 1 0.1 0.01 0.001 v in , input vol t age (vol ts) t a = - 25 c 75 c 25 c figure 23 . dc current gain figure 24. output capacitance 100 10 1 0.1 01 0 20 30 40 50 i c , collect or current (ma) figure 25 . output current versus input v oltage 1000 10 i c , collect or current (ma) t a = 7 5 c 25 c -25 c 100 10 1 100 25 c 75 c 50 0 1 02 0 3 04 0 1 0.80.6 0.4 0.2 0 v r , reverse bias vol t age (vol ts) c ob , capacitance (pf) figure 26 . input v oltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collect or current (ma) 25 c 75 c v ce = 10 v f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a = - 25 c t a = - 25 c v ce(sat) , collect or voltage (vol ts)
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 10 of 28 characteristic curves typical electrical ch aracteristics smun5313dw p np transist or v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 27. v ce(sat) versus i c i c , collect or current (ma) 1 0.1 0.01 01 0 20 30 40 75 c 25 c figure 28 . dc current gain 1000 100 10 1 10 100 i c , collect or current (ma) -25 c figure 29 . output capacitance figure 30. output current versus input v oltage 100 10 1 0.1 0.01 0.001 01 25 c v in , input vol t age (vol ts) -25 c 50 01 0 20 30 40 1 0.80.6 0.4 0.2 0 v r , reverse bias vol t age (vol ts) c ob , capacitance (pf) 1 2 3 4 5 6 7 8 9 figure 31 . input v oltage versus output current 100 10 1 0. 1 0 10 20 30 40 i c , collect or current (ma) t a = - 25 c 25 c 75 c 50 i c /i b = 10 t a = - 25 c 25 c t a = 7 5 c f = 1 mhzl e = 0 v t a = 25 c v o = 5 v t a = 7 5 c v o = 0.2 v v ce(sat) , collect or voltage (vol ts)
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 11 of 28 typical electrical characteristic s smun5314dw npn transistor 10 1 0.1 01 0 20 30 40 50 100 10 1 02 4 68 10 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1 52 0 25 30 3 54 0 4 55 0 v r , reverse bias vol t age (vol ts) v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 32. v ce(sat) versus i c i c , collect or current (ma) 02 0 40 60 80 figure 33. dc cu rrent gain 1 10 100 i c , collect or current (ma) figure 34. output capacitance figure 35. output current versus input v oltage v in , input vol t age (vol ts) c ob , capacitance (pf) figure 36 . input v oltage versus output current i c , collect or current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a = 7 5 c v ce = 10 300250 200 150 100 50 0 2468 15 20 40 50 60 70 80 90 f = 1 mhzl e = 0 v t a = 25 c 25 c i c /i b = 10 t a = - 25 c t a = 7 5 c 25 c -25 c v o = 0.2 v t a = - 25 c 75 c v o = 5 v 25 c 75 c v ce(sat) , collect or voltage (vol ts) characteristic curves
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 12 of 28 characteristic curves typical electrical characteristic s smun5314dw pnp transistor 10 1 0.1 01 0 20 30 40 50 100 10 1 0 246 8 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 1 01 5 2 02 5 3 03 5 4 04 5 50 v r , reverse bias vol t age (vol ts) v in , input vol t age (vol ts) i c , collect or current (ma) h fe , dc current gain (normalized) figure 37. v ce(sat) versus i c i c , collect or current (ma) 02 0 40 60 80 figure 38 . dc current gain 1 10 100 i c , collect or current (ma) figure 39. output capacitance figure 40. output current versus input v oltage v in , input vol t age (vol ts) c ob , capacitance (pf) figure 41 . input v oltage versus output current i c , collect or current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a = 7 5 c v ce = 10 v 180160 140 120 100 8060 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhzl e = 0 v t a = 25 c 25 c i c /i b = 10 t a = - 25 c t a = 7 5 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a = - 25 c 75 c 75 c v ce(sat) , collect or voltage (vol ts)
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 13 of 28 characteristic curves typical electrical characteristic s smun5315dw npn transist or 75 c 25 c 25 c figure 42. v ce(sat) versus i c figure 43. dc current gain figure 44. output capacitance figure 45. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 46 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 14 of 28 characteristic curves typical electrical characteristic s smun5315dw pnp transistor 75 c 25 c 25 c figure 47. v ce(sat) versus i c figure 48. dc current gain figure 49. output capacitance figure 50. output current versus input v oltage v in , input voltage (volts) figure 51 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.51.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 15 of 28 characteristic curves typical electrical characteristic s smun5316dw npn transistor 75 c 25 c 25 c figure 52. v ce(sat) versus i c figure 53. dc current gain figure 54. output capacitance figure 55. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 56 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 16 of 28 characteristic curves typical electrical characteristic s smun5316dw pnp transistor 75 c 25 c 25 c figure 57. v ce(sat) versus i c figure 58. dc current gain figure 59. output capacitance figure 60. output current versus input v oltage v in , input voltage (volts) figure 61 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.51.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 17 of 28 characteristic curves typical electrical characteristic s smun5330dw npn transistor 75 c 25 c 25 c figure 62. v ce(sat) versus i c figure 63. dc current gain figure 64. output current versus input v oltage v in , input voltage (volts) figure 65 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 0.01 0.1 v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 18 of 28 characteristic curves typical electrical ch aracteristics smun5330dw pnp transist or 75 c 25 c 25 c figure 66. v ce(sat) versus i c figure 67. dc current gain figure 68. output capacitance figure 69. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 70 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.51.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 19 of 28 characteristic curves typical electrical characteristic s smun5331dw npn transistor 75 c 25 c 25 c figure 71. v ce(sat) versus i c figure 72. dc current gain figure 73. output capacitance figure 74. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 75 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 12 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 10 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 20 of 28 characteristic curves typical electrical characteristic s smun5331dw pnp transist or 75 c 25 c 25 c figure 76. v ce(sat) versus i c figure 77. dc current gain figure 78. output capacitance figure 79. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 80 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce (s at) , collector voltage (volts) h fe , dc current gain 4.51.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 21 of 28 characteristic curves typical electrical characteristic s smun5332dw npn transistor 75 c 25 c 25 c figure 81. v ce(sat) versus i c figure 82. dc current gain figure 83. output capacitance figure 84. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 85 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 22 of 28 characteristic curves typical electrical characteristic s smun5332dw pnp transistor 75 c 25 c 25 c figure 86. v ce(sat) versus i c figure 87. dc current gain figure 88. output capacitance figure 89. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 90 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce (s at) , collector voltage (volts) h fe , dc current gain 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 3 100 5 6 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 23 of 28 characteristic curves typical electrical characteristic s smun5333dw npn transistor 75 c 25 c 25 c figure 91. v ce(sat) versus i c figure 92. dc current gain figure 93. output capacitance figure 94. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 95 . input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce (s at) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 20 3.5 3 2.5 100 5 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 24 of 28 characteristic curves typical electrical characteristic s smun5333dw pnp transistor 75 c 25 c 25 c figure 96. v ce(sat) versus i c figure 97. dc current gain figure 98. output capacitance figure 99. output current versus input v oltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 10 0. input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 51 3 7 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 25 of 28 characteristic curves typical electrical characteristic s smun5334dw npn transistor 75 c 25 c 25 c figure 101. v ce(sat) versus i c figure 102. dc current gain figure 103. output capacitance figure 104. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 10 5. input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 3 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 2.50.5 1.5 3.5 10 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 26 of 28 characteristic curves typical electrical characteristic s smun5334dw pnp transistor 75 c 25 c 25 c figure 106. v ce ( sat ) versus i c figure 107. dc current gain i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce (s at) , collector voltage (volts) h fe , dc current gain 75 c 25 c t a = 25 c 0.01 20 100 5 i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 27 of 28 characteristic curves typical electrical characteristic s smun5335dw npn transistor 75 c 25 c 25 c figure 108. v ce(sat) versus i c figure 109. dc current gain figure 1 10. output capacitance figure 1 1 1. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 1 12. input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce (s at) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
elektronische bauelemente smun5311dw series npn / pnp digital small signal transistors 18-dec-2009 rev. a page 28 of 28 characteristic curves typical electrical characteristic s smun5335dw pnp transistor 75 c 25 c 25 c figure 113. v ce(sat) versus i c figure 114. dc current gain figure 1 15. output capacitance figure 116. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 1 17. input v oltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce (s at) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 75 c 25 c t a = 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 f = 1 mhzi e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v

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