1 transistors with built-in resistor publication date: december 2003 sjh00040ced parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 1 a, i e = 030v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 020v emitter-base voltage (collector open) v ebo i e = 1 a, i c = 05v collector-base cutoff current (emitter open) i cbo v cb = 30 v, i e = 01 a emitter -base cutoff current (collector open) i ebo v eb = 5 v, i c = 01 a forward current unr2227 h fe v ce = 10 v, i c = 100 ma 70 ? transfer ratio unr2225/2226 100 600 collector-emitter saturation voltage v ce(sat) i c = 50 ma, i b = 2.5 ma 80 mv input resistance unr2226 r 1 ? 30% 4.7 + 30% k ? unr2227 6.8 unr2225 10 resistance ratio unr2227 r 1 /r 2 0.8 1.0 1.2 ? unr2225 (UN2225) , unr2226 (un2226) , unr2227 (un2227) silicon npn epitaxial planar type for muting features ? costs can be reduced through downsizing of the equipment and reduction of the number of parts ? mini type package allowing easy automatic insertion through tape packing and magazine packing resistance by part number marking symbol (r 1 )(r 2 ) ? unr2225 (UN2225) fz 10 k ?? ? unr2226 (un2226) fy 4.7 k ?? ? unr2227 (un2227) fw 6.8 k ? 6.8 k ? absolute maximum ratings t a = 25 c unit: mm electrical characteristics t a = 25 c 3 c internal connection note) the part numbers in the parenthesis show conventional part number. b r 1 r 2 c e parameter symbol rating unit collector-base voltage (emitter open) v cbo 30 v collector-emitter voltage (base open) v ceo 20 v emitter-base voltage (collector open) v ebo 5v collector current i c 600 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1
unr2225/2226/2227 2 sjh00040ced electrical characteristics (continued) t a = 25 c 3 c common characteristics chart p t ? t a characteristics charts of unr2225 i c ? v ce v ce(sat) ? i c h fe ? i c 0 50 100 150 200 250 0 40 80 120 160 ambient temperature t a ( c ) total power dissipation p t ( mw ) note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : refer to r on measurment circuit parameter symbol conditions min typ max unit resistance ratio unr2226 r on v i = 7 v, r l = 1 k ? , f = 1 khz 0.95 ? unr2227 1.1 unr2225 1.5 transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz v i v v r l r 1 r 2 v b v a f = 1 khz v = 0.3 v r on = v b r l ( ? ) v a ? v b 0 2.5 5.0 7.5 10.0 200 300 400 100 0 i b = 1.0 ma t a = 25 c 0.9 ma 0.8 ma 0.7 ma 0.6 ma 0.5 ma 0.4 ma 0.3 ma 0.2 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 1 10 100 1 10 100 1 000 t a = 75 c 25 c ? 25 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) (mv) collector current i c (ma) 0 1 50 100 150 250 200 10 10 2 10 3 10 4 t a = 75 c 25 c ? 25 c v ce = 10 v forward current transfer ratio h fe collector current i c (ma)
unr2225/2226/2227 3 sjh00040ced c ob ? v cb i o ? v in v in ? i o characteristics charts of unr2226 i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 1 1 5 10 14 10 100 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 1 10 0.25 0.50 10 2 10 3 10 4 10 5 0.75 1.00 1.25 1.50 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 0.1 10 ? 3 10 ? 2 1 10 100 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 200 300 400 100 0 0 2.5 5.0 7.5 10.0 i b = 1.0 ma t a = 25 c 0.9 ma 0.8 ma 0.7 ma 0.6 ma 0.5 ma 0.4 ma 0.3 ma 0.1 ma 0.2 ma collector-emitter voltage v ce (v) collector current i c (ma) 1 1 10 100 10 100 1 000 1 000 25 c ? 25 c t a = 75 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) (mv) collector current i c (ma) 0 1 100 200 300 500 400 10 10 2 10 3 10 4 25 c ? 25 c t a = 75 c v ce = 10 v forward current transfer ratio h fe collector current i c (ma) 1 1 5 10 14 10 100 f = 1 mhz collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 1 10 0.25 0.50 10 2 10 3 10 4 10 5 0.75 1.00 1.25 1.50 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 0.1 10 ? 3 10 ? 2 1 10 100 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma)
unr2225/2226/2227 4 sjh00040ced characteristics charts of unr2227 c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c 200 400 300 100 0 024610 i b = 1.0 ma t a = 25 c 0.9 ma 0.8 ma 0.7 ma 0.6 ma 0.5 ma 0.4 ma 0.3 ma 0.2 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 10 100 1 000 1 10 100 1 000 25 c ? 25 c t a = 75 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) (mv) collector current i c (ma) 0 1 100 300 250 150 50 200 10 10 2 10 3 10 4 25 c ? 25 c v ce = 10 v t a = 75 c forward current transfer ratio h fe collector current i c (ma) 0 1 8 4 20 16 12 10 100 f = 1 mhz collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.001 0.01 0.25 0.50 0.1 1 10 100 0.75 1.00 1.25 1.50 v o = 5 v t a = 25 c output current i o (ma) input voltage v in (v) 0.1 10 ? 3 10 ? 2 1 10 100 10 ? 1 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma)
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