rev 0.5 / jun. 2006 1 hy27us(08/16)561a series hy27ss(08/16)561a series 256mbit (32mx8bit / 16 mx16bit) nand flash document title 256mbit (32mx8bit / 16mx 16bit) nand flash memory revision history revision no. history draft date remark 0.0 initial draft. apr. 04. 2005 preliminary 0.1 1) change ac parameter 2) change 256mb package type. - wsop package is changed to usop package. - figure & dimension are changed. jul. 07. 2005 preliminary 0.2 1 ) correct the test conditions (dc characteristics table) 2 ) change ac conditions table 3 ) add tww parameter ( tww = 100ns, min) - texts & figures are added. - tww is added in ac timing characteristics table. 4) edit copy back program operation step 5) edit system interface using ce don?t care figures. 6) correct address cycle map. 7) change nop (table 11) aug. 08. 2005 preliminary tcry(1.8v) before 50+tr(r/b#) after 60+tr(r/b#) test conditions ( i cc1) test conditions ( i li, i lo ) before t rc =50ns, ce#= v il , i out =0ma vin=vout=0 to 3.6v after t rc (1.8v=60ns, 3.3v=50ns) ce#= v il , i out =0ma vin=vout=0 to vcc (max) main array spare array before 1 2 after 2 3
rev 0.5 / jun. 2006 2 hy27us(08/16)561a series hy27ss(08/16)561a series 256mbit (32mx8bit / 16 mx16bit) nand flash revision history - continued - revision no. history draft date remark 0.2 8) correct pkg dimension (tsop, usop pkg) 9) change vil parameter (max.) 10) change ac parameter aug. 08. 2005 preliminary 0.3 1) correct usop figure. nov. 07. 2005 preliminary 0.4 1) correct figure 32. feb. 06. 2006 preliminary 0.5 1) add ecc algorithm. (1bit/512bytes) 2) delet preliminary. 3) change ac parameter 4) correct read id naming jun. 20. 2006 cp before 0.050 after 0.100 1.8v 3.3v before 0.2xvcc 0.2xvcc after 0.4 0.8 toh trp trea before 15 30 35 after 10 25 30 tr (1.8v) tcry (1.8v) tcry (3.3v) before 12 50+tr(r/b#) (4) 50+tr(r/b#) (4) after 15 80+tr(r/b#) (4) 60+tr(r/b#) (4) twhr before 60 ns after 50 ns
rev 0.5 / jun. 2006 3 hy27us(08/16)561a series hy27ss(08/16)561a series 256mbit (32mx8bit / 16 mx16bit) nand flash features summary high density nand flash memories - cost effective solutions for mass storage applications nand interface - x8 or x16 bus width. - multiplexed address/ data - pinout compatibility for all densities supply voltage - 3.3v device: vcc = 2.7 to 3.6v : hy27usxx561a - 1.8v device: vcc = 1.7 to 1.95v : hy27ssxx561a memory cell array = (512+16) bytes x 32 pages x 2,048 blocks = (256+8) words x 32 pages x 2,048 blocks page size - x8 device : (512 + 16 spare) bytes : hy27(u/s)s08561a - x16 device: (256 + 8 spare) words : hy27(u/s)s16561a block size - x8 device: (16k + 512 spare) bytes - x16 device: (8k + 256 spare) words page read / program - random access: 3.3v: 12us (max.) 1.8v: 15us (max.) - sequential access: 3.3v: 50ns (min.) 1.8v: 60ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering fast block erase - block erase time: 2ms (typ.) status register electronic signature - 1st cycle : manufacturer code - 2nd cycle: device code chip enable don't care - simple interface with microcontroller automatic page 0 read at power-up option - boot from nand support - automatic memory download serial number option hardware data protection - program/erase locked during power transitions data integrity - 100,000 program/erase cycles (with 1bit/512byte ecc) - 10 years data retention package - hy27(u/s)s(08/16)561a-t(p) : 48-pin tsop1 (12 x 20 x 1.2 mm) - hy27(u/s)s(08/16)561a-t (lead) - hy27(u/s)s(08/16)561a-tp (lead free) - hy27(u/s)s(08/16)561a-s(p) : 48-pin usop1 (12 x 17 x 0.65 mm) - hy27(u/s)s(08/16)561a-s (lead) - hy27(u/s)s(08/16)561a-sp (lead free) - hy27(u/s)s(08/16)561a-f(p) : 63-ball fbga (9 x 11 x 1.0 mm) - hy27(u/s)s(08/16)561a-f (lead) - hy27(u/s)s(08/16)561a-fp (lead free)
rev 0.5 / jun. 2006 4 hy27us(08/16)561a series hy27ss(08/16)561a series 256mbit (32mx8bit / 16 mx16bit) nand flash 1. summary description the hynix hy27(u/s)s(08/16)561a series is a 32mx8bit with spare 8mx16 bit capacity. the device is offered in 1.8v vcc power supply and in 3.3v vcc power supply. its nand cell provides the most cost-effective solution for the solid state mass storage market. the memory is divided into blocks that can be erased indepe ndently so it is possible to preserve valid data while old data is erased. the device contains 2048 blocks, composed by 32 pages cons isting in two nand structures of 16 series connected flash cells. a program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in typical 2ms on a 16k-byte(x8 device) block. data in the page mode can be read out at 50ns cycle time per byte. the i/o pins serve as the ports for address and data input/output as well as command input. this interface allows a reduced pin count and easy migration towards dif- ferent densities, without any rearrangement of footprint. commands, data and addresses are synchronously introduced using ce , we , ale and cle input pin. the on-chip program/erase controller automates all progra m and erase functions including pulse repetition, where required, and internal verifica tion and margining of data. the modifying can be locked using the wp input pin. the output pin r/b (open drain buffer) signals the status of the device during each operation. in a system with multi- ple memories the r/b pins can be connected all together to provide a global status signal. even the write-intensive systems can take advantage of the hy27(u/s)s(08/16)561a extended reliability of 100k pro- gram/erase cycles by providing ecc (error correc ting code) with real time mapping-out algorithm. the chip could be offered with the ce don?t care function. this function allows the direct download of the code from the nand flash memory device by a microcontroller, since the ce transitions do not st op the read operation. the copy back function allows the opti mization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section withou t the time consuming serial data insertion phase. this device includes also extra features like otp/unique id area, block lock mechanism, automatic read at power up, read id2 extension. the hynix hy27(u/s)s(08/16)561a series is available in 48 - tsop1 12 x 20 mm , 48 - usop1 12 x 17 mm, fbga 9 x 11 mm. 1.1 product list part number orization vcc range package HY27SS08561A x8 1.70 - 1.95 volt 63fbga / 48tsop1 / 48usop1 hy27ss16561a x16 hy27us08561a x8 2.7v - 3.6 volt hy27us16561a x16
rev 0.5 / jun. 2006 5 hy27us(08/16)561a series hy27ss(08/16)561a series 256mbit (32mx8bit / 16 mx16bit) nand flash 9 & |