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original creation date: 08/29/95 last update date: 05/02/00 last major revision date: 08/29/95 mnlm119-x rev 0e1 microcircuit data sheet high speed dual comparator general description the lm119 precision high speed dual comparator is fabricated on a single monolithic chip. it is designed to operate over a wide range of supply voltages down to a single 5v logic supply and ground. furthermore it has a higher gain and lower input current than other devices. the uncommitted collector of the output stage makes the lm119 compatible with rtl, dtl and ttl as well as capable of driving lamps and relays at currents up to 25ma. ns part numbers lm119e/883 lm119h/883 lm119j/883 lm119w/883 lm119wg/883 industry part number lm119 prime die lm119 processing mil-std-883, method 5004 quality conformance inspection mil-std-883, method 5005 subgrp description temp ( c) o 1 static tests at +25 2 static tests at +125 3 static tests at -55 4 dynamic tests at +25 5 dynamic tests at +125 6 dynamic tests at -55 7 functional tests at +25 8a functional tests at +125 8b functional tests at -55 9 switching tests at +25 10 switching tests at +125 11 switching tests at -55 1
microcircuit data sheet mnlm119-x rev 0e1 features - two independent comparators - operates from a single 5v supply - typically 80ns response time at +15v - minimum fan-out of 2 each side - maximum input current of 1ua over temperature - inputs and outputs can be isolated from system ground - high common mode slew rate although designed primarily for applications requiring operation from digital logic supplies, the lm119 is fully specified for power supplies up to +15v. it features faster response than the lm111 at the expense of higher power dissipation. however, the high speed, wide operating voltage range and low package count make the lm119 much more versatile than older devices. 2
microcircuit data sheet mnlm119-x rev 0e1 (absolute maximum ratings) (note 1) total supply voltage 36v output to negative supply voltage 36v ground to negative supply voltage 25v ground to positive supply voltage 18v differential input voltage +5v input voltage (note 3) +15v power dissipation (note 2) 500mw output short circuit duration 10 sec. maximum junction temperature 150 c storage temperature range -65 c to 150 c lead temperature 260 c soldering, (10 seconds) thermal resistance thetaja 89 c/w e pkg (still air) 63 c/w e pkg (500lf/min air flow) 162 c/w h pkg (still air) 88 c/w h pkg (500lf/min air flow) 94 c/w j pkg (still air) 52 c/w j pkg (500lf/min air flow) 215 c/w w pkg (still air) 132 c/w w pkg (500lf/min air flow) 215 c/w wg pkg (still air) 132 c/w wg pkg (500lf/min air flow) thetajc 17.0 c/w e pkg 31 c/w h pkg 10.9 c/w j pkg 12.3 c/w w pkg 12.3 c/w wg pkg package weight (typical) tbd e pkg tbd h pkg tbd j pkg tbd w pkg tbd wg pkg esd tolerance (note 4) 800v 3
mnlm119-x rev 0e1 microcircuit data sheet note 1: absolute maximum ratings indicate limits beyond which damage to the device may occur. operating ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. for guaranteed specifications and test conditions, see the electrical characteristics. the guaranteed specifications apply only for the test conditions listed. some performance characteristics may degrade when the device is not operated under the listed test conditions. note 2: the maximum power dissipation must be derated at elevated temperatures and is dictated by tjmax (maximum junction temperature), thetaja (package junction to ambient thermal resistance), and ta (ambient temperature). the maximum allowable power dissipation at any temperature is pdmax = (tjmax - ta)/thetaja or the number given in the absolute maximum ratings, whichever is lower. note 3: for supply voltages less than +15v the absolute maximum input voltage is equal to the supply voltage. note 4: human body model, 1.5k ohm in series with 100pf. recommended operating conditions operating temperature range -55 c < ta < 125 c 4
mnlm119-x rev 0e1 microcircuit data sheet electrical characteristics dc parameters: (the following conditions apply to all the following parameters, unless otherwise specified.) dc: vcm = 0v. symbol parameter conditions notes pin- name min max unit sub- groups icc+ positive supply current +vcc = +15v, v+ = 5.6v thru 1.4k ohms, vout = low 11 ma 1 11.5 ma 2 icc- negative supply current +vcc = +15v, v+ = 5.6v thru 1.4k ohms, vout = low -4.2 ma 1 -4.5 ma 2 ileak output leakage current +vcc = 15v, -vcc = -1v vgrd = 0v, vout = 35v, vin = 5mv 1.8 ua 1 9.5 ua 2 10 ua 3 iib input bias current +vcc = +15v 0.475 ua 1 0.95 ua 2, 3 v+ = 5v, v- = 0v, vcm = 1.5v 0.475 ua 1 0.95 ua 2, 3 vio input offset voltage v+ = 5v, v- = 0v, vcm = 1v, rs = 5k ohms -3.8 3.8 mv 1 -6.8 6.8 mv 2, 3 v+ = 5v, v- = 0v, vcm = 3v, rs = 5k ohms -3.8 3.8 mv 1 -6.8 6.8 mv 2, 3 +vcc = +15v, vcm = 12v, rs = 5k ohms -3.8 3.8 mv 1 -6.8 6.8 mv 2, 3 +vcc = +15v, vcm = -12v, rs = 5k ohms -3.8 3.8 mv 1 -6.8 6.8 mv 2, 3 iio input offset current v+ = 5v, v- = 0v, vcm = 1v -75 75 na 1 -100 100 na 2, 3 v+ = 5v, v- = 0v, vcm = 3v -75 75 na 1 -100 100 na 2, 3 +vcc = +15v, vcm = 12v -75 75 na 1 -100 100 na 2, 3 +vcc = +15v, vcm = -12v -75 75 na 1 -100 100 na 2, 3 vsat output saturation voltage v+ = 5v, v- =0v, il = 4ma 3 0.4 v 1, 2 3 0.6 v 3 vcc = +15v, il = 25ma, vin = -5mv 1.5 v 1 5
mnlm119-x rev 0e1 microcircuit data sheet electrical characteristics dc parameters:(continued) (the following conditions apply to all the following parameters, unless otherwise specified.) dc: vcm = 0v. symbol parameter conditions notes pin- name min max unit sub- groups avs voltage gain +vcc = +15v, delta vout = 12v, rl = 1.4k ohms 1, 4 10.5 v/mv 4 1, 4 10 v/mv 5, 6 v+ = 5v, v- = 0v, delta vout + 4.5v, rl = 1.4k ohms 2, 4 8 v/mv 4 2, 4 5 v/mv 5 2, 4 5.8 v/mv 6 dc parameters: drift values (the following conditions apply to all the following parameters, unless otherwise specified.) dc: vcm = 0v. "deltas not required on b-level product. deltas required for s-level product only as specified on internal processing instructions (ipi)." icc+ positive supply current +vcc = +15v, v+ = 5.6v thru 1.4k ohms, vout = low -1 1 ma 1 icc- negative supply current +vcc = +15v, v+ = 5.6v thru 1.4k ohms, vout = low -0.5 0.5 ma 1 vio input offset voltage v+ = 5v, v - = 0v, vcm = 1v, rs = 5k ohms -0.4 0.4 mv 1 note 1: gain is computed with an output swing from +13.5v to +1.5v. note 2: gain is computed with an output swing from +5.0v to +0.5v. note 3: output is monitored by measuring vin with limits from 0 to 6mv at all temps. note 4: datalog reading in k = v/mv. 6
microcircuit data sheet mnlm119-x rev 0e1 graphics and diagrams graphics# description 06142hra3 lcc (e), type c, 20 terminal (b/i ckt) 08906hrb3 metal can (h), 10 lead (b/i ckt) 09078hrb3 cerpack (w), 10 lead (b/i ckt) 09641hra2 cerdip (j), 14 lead (b/i ckt) e20are lcc (e), type c, 20 terminal(p/p dwg) h10crf metal can (h), to-100, 10ld, .230 dia pc (p/p dwg) j14arh cerdip (j), 14 lead (p/p dwg) p000182a cerdip (j), 14 lead (pinout) p000196a lcc (e), 20 lead (pinout) p000197a metal can (h), to-100, 10 ld, .230 dia pc (pinout) p000198a cerpack (w), 10 lead (pinout) p000237a ceramic soic (wg), 10 lead (pinout) w10arg cerpack (w), 10 lead (p/p dwg) wg10arc ceramic soic (wg), 10 lead (p/p dwg) see attached graphics following this page. 7

n mil/aerospace operations 2900 semiconductor drive santa clara, ca 95050 1 14 2 13 3 12 4 11 5 10 6 9 7 8 n/c n/c gnd 1 in+ 1 in- 1 v- output 2 gnd 2 in+ 2 in- 2 v+ output 1 n/c n/c 14 - lead dip lm119j top view connection diagram p000182a
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microcircuit data sheet mnlm119-x rev 0e1 revision history rev ecn # rel date originator changes 0d0 m0001370 05/02/00 barbara lopez added power dissipation - note 2 in absolute section. renumbered all other notes. archive mds - mnlm119-x rev. 0c0. release mds - mnlm119-x rev. 0d0. 0e1 m0003659 05/02/00 rose malone update mds: mnlm119-x, rev. 0d0 to mnlm119-x, rev. 0e1. added reference for wg pkg, package weight section and changed thetajc e pkg number from 5 c/w to 17.0 c/w in absolute maximum section. add graphics to graphics section. 8

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