a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 c symbol test conditions (per side) minimum typical maximum units bv ceo i c = 100 ma 30 v bv cbo i c = 100 ma 60 v bv ebo i e = 50 ma 3.0 v i ces v ce = 28 v 10 ma h fe v ce = 5.0 v i c = 3.0 a 15 70 --- c ob v cb = 28 v f = 1.0 mhz 100 pf p out v ce = 28 v i cq = 2 x 500 ma f = 860 mhz 150 w g p n c v ce = 28 v i cq = 2 x 250 ma f = 860 mhz p out = 150 w 6.5 45 db dbc npn silicon rf power transistor SD1492 description: the asi SD1492 is a common emitter device designed for class ab operation in uhf amplifier applications in television band iv & v transmitters. features include: ? gold metalization ? emitter ballasting ? internal matching maximum ratings i c 25 a v cbo 60 v p diss 310 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 0.55 c/w package style .450 bal flg.(a) minimum inches / mm .411 / 10.44 .825 / 20.96 b c d e f g a maximum .865 / 21.97 .421 / 10.69 inches / mm h dim k l i j .002 / 0.05 .095 / 2.41 .006 / 0.15 .105 / 2.67 .250 / 6.35 m .373 / 9.47 .385 / 9.78 .115 / 2.92 .135 / 3.43 .457 / 11.61 .445 / 11.30 1.675 / 42.55 1.685 / 42.80 .205 / 5.21 a b .120 x 45 c .050 nom. f g h i j k l m 4x.060 r .210 .208 d e full r .525 / 13.34 .535 / 13.59 1.265 / 32.18 1.255 / 31.88 .120 / 3.25 .130 / 3.30
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