050-5617 rev c maximum ratings all ratings: t c = 25 c unless otherwise specified. unit volts amps volts watts w/ c c amps mj unit volts amps ohms m a na volts min typ max 100 100 0.011 250 1000 100 24 apt10m1b2vr 100 100 400 30 40 520 4.16 -55 to 150 300 100 50 2500 APT10M11B2VR 100v 100a 0.011 w symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) t-max g d s characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 m a) on state drain current 2 6 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) parameter drain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 6 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25 c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 6 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 6 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com power mos v ? power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? 100% avalanche tested ? lower leakage ? new t-max ? package (clip-mounted to-247 package)
dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = 0.5 i d[cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 0.6 w min typ max 8600 10300 3200 4480 1180 1770 300 450 95 145 110 165 16 32 33 66 46 70 816 unit pf nc ns APT10M11B2VR characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5617 rev c source-drain diode ratings and characteristics unit amps volts ns m c min typ max 100 400 1.5 250 2.5 thermal characteristics symbol r q jc r q ja min typ max 0.24 40 unit c/w characteristic junction to case junction to ambient z q jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 symbol i s i sm v sd t rr q rr 1 repetitive rating: pulse width limited by maximum t j 4 starting t j = +25 c, l = 500 m h, r g = 25 w , peak i l = 100a 2 pulse test: pulse width < 380 m s, duty cycle < 2% 5 these dimensions are equal to the to-247ad without mounting hole. 3 see mil-std-750 method 3471 6 the maximum current is limited by lead temperature. apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditions continuous source current (body diode) pulsed source current 1 6 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/ m s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/ m s) 6
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5 02468 050100150200250300 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 APT10M11B2VR i d = 0.5 i d [cont.] v gs = 10v 200 160 120 80 40 0 1.10 1.05 1.00 0.95 0.90 0.85 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 200 160 120 80 40 0 200 160 120 80 40 0 120 100 80 60 40 20 0 2.00 1.75 1.50 1.25 1.00 0.75 0.50 050-5617 rev c v ds > i d (on) x r ds (on)max. 250 m sec. pulse test @ <0.5 % duty cycle v gs =7v, 10v & 15v 6v v gs =10 & 15v v gs =10v v gs =20v t j = +25 c t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c 7v 5.5v 4.5v 5v 4v 6v 5.5v 4.5v 5v 4v normalized to v gs = 10v @ 0.5 i d [cont.]
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) APT10M11B2VR t c =+25 c t j =+150 c single pulse 400 100 50 10 5 1 20 16 12 8 4 0 050-5617 rev c operation here limited by r ds (on) c rss c oss c iss 30,000 10,000 5,000 1,000 500 400 100 50 10 5 1 100 m s 10ms 100ms dc 1ms t j =+150 c t j =+25 c c oss c iss t-max? package outline 5 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate dimensions in millimeters and (inches) drain 2-plcs. apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 1 5 10 50 100 .01 .1 1 10 50 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0 v ds =50v v ds =20v v ds =80v i d = 0.5 i d [cont.]
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