2009. 09. 04 1/4 semiconductor technical data KMB012N30QA n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for dc/dc converter and battery pack.. features v dss =30v, i d =12a. drain to source on resistance. r ds(on) =7m (max.) @ v gs =10v r ds(on) =11m (max.) @ v gs =4.5v mosfet maximum ratings (ta=25 unless otherwise noted) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ note1) surface mounted on 1 ? 1 ? fr4 board, t 10sec. 1 2 3 4 8 7 6 5 s s s g d d d d 1 2 3 4 8 7 6 5 kmb012n 30qa pin connection (top view) characteristic smbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current dcta=25 (note 1) i d 12 a pulsed (note 1) i dp a drain power dissiation ta=25 (note 1) p d 25 w maximum unction temerature t 150 storage temerature range t stg -55150 thermal resistance unction to amient (note 1) r tha 50 w
2009. 09. 04 2/4 KMB012N30QA revision no : 0 electrical characteristics (ta=25 ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 30 - - v drain cut-off current i dss v gs =0v, v ds =30v - - 1 a gate to source leakage current i gss v gs = 20v, v ds =0v - - 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain to source on resistance r ds(on) v gs =10v, i d =12a (note2) - 6.0 7.0 m v gs =4.5v, i d =10a (note2) - 8.5 11.0 forward transconductance g fs v ds =5v, i d =12a (note2) - 48 - s dynamic input capaclitance c iss v ds =15v, v gs =0v, f=1mhz (note2) - 1310 - pf ouput capacitance c oss - 420 - reverse transfer capacitance c rss - 205 - total gate charge v gs =10v q g v ds =15v, v gs =10v, i d =12a (note2) - 27.0 - nc v gs =4.5v - 14.5 - gate to source charge q gs - 4.8 - gate to drain charge q gd - 6.6 - turn-on delay time t d(on) v ds =15v, v gs =10v i d =1a, r g =6 (note2) - 7.0 - ns turn-on rise time t r - 7.5 - turn-off delay time t d(off) - 28.3 - turn-off fall time t f - 9.9 - source to drain diode ratings continuous source current i s - - - 1.7 a pulsed source current i sp - - - 48 source to drain forward voltage v sd v gs =0v, i s =1.7a (note2) - 0.75 1.2 v note2) pulse test : pulse width 300 , duty cycle 2%
2009. 09. 04 3/4 KMB012N30QA revision no : 0 0 9 12 3 6 15 30 40 01020 50 drain current i d (a) drain to source on resistance r ds(on) ( ? ) v gs =4.5v v gs =10v fig2. r ds(on) - i d gate to source voltage v gs (v) fig1. i d - v ds drain to source voltage v ds (v) 0 0 0.5 20 40 10 30 50 1.0 1.5 2.0 2.5 3.0 10 30 0 20 50 40 234 01 5 fig3. i d - v gs fig6. i s - v sd drain current i d (a) drain current i d (a) fig4. r ds(on) - t j -75 -50 -25 25 50 75 175 150 125 100 0 reverse drain current i s (a) 10 -2 10 -1 10 0 10 1 10 2 0.6 1.0 0.4 0.8 0.2 source to drain voltage v sd (v) normalized gate to source threshold voltage fig5. v th - t j -75 -50 -25 0.4 0.6 0.2 1.6 0.8 1.0 1.4 1.2 0.6 0.8 0.2 0.4 1.0 1.2 1.8 1.4 2.0 1.6 050100 25 175 150 125 75 normalized on resistance r ds(on) junction temperature tj ( ) c junction temperature tj ( ) c 5v 3.0v 3.5v 4.0v 4.5v v ds = v gs, i d = 250 a t j =25 c t j =-55 c t j =150 c t j =25 c t j =-55 c t j =150 c v gs =10v v gs =10v, i d =12a v gs =4.5v, i d =10a
2009. 09. 04 4/4 KMB012N30QA revision no : 0 drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area r ds(on) limit dc 100ms 10ms 1ms 100us c oss f=1mhz square wave pulse duration (sec) 10 1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 1 10 -4 fig11. transient thermal response curve 10 -1 10 -2 10 -3 normalized effective transient thermal resistance t 1 t 2 p dm r thja =58.3 c/w 0.02 0.1 0.01 0.2 0.5 0.05 drain to source voltage v ds (v) capacitance c (pf) fig8. c - v ds 25 10 15 05 20 30 gate to charge q g (nc) 0 10 6 2 4 8 24 61218 030 fig9. q g - v gs gate to source voltage v gs (v) v ds = 15 v , i d = 12 a c rss c iss v gs = 10v single pulse t j = 25 c 10 1 10 2 10 3 10 4 single pulse gate to source voltage v gs (v) fig7. r ds(on) - v gs 6 024 8 12 10 0 5 25 15 20 10 drain to source on resistance r ds(on) (m ? ) t j =150 c i d =12a t j =25 c 10 -2 10 -2 10 -1 10 -1 10 0 10 0 10 1 10 1 10 2 10 2
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