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2010-09-08 1 BFR740L3RH 2 3 1 npn silicon germanium rf transistor ? high gain ultra low noise rf transistor ? extremly small and flat leadless package, height 0.32 mm, ideal for modules ? provides outstanding performance for wireless applications up to 10 ghz ? ideal for wlan applications, including routers and access points ? based on infineon's reliable high volume sige:c technology ? outstanding noise figure nf min 0.5 db at 1.8 ghz outstanding noise figure nf min 0.8 db at 6 ghz ? accurate spice gp model enables effective design in process ? high maximum stable and available gain g ms = 24.5 db at 1.8 ghz, g ma = 15 db at 6 ghz ? pb-free (rohs compliant) package esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFR740L3RH r9 1=b 2=c 3=e tslp-3-9
2010-09-08 2 BFR740L3RH maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4 3.5 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 30 ma base current i b 3 total power dissipation 1) t s 99c p tot 160 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 320 k/w 1 t s is measured on the emitter lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note an077 thermal resistance electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 v ce = 5 v, v be = 0 i ces - - - 0.001 30 0.04 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - 1 40 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - 10 900 dc current gain i c = 25 ma, v ce = 3 v, pulse measured h fe 160 250 400 -
2010-09-08 3 BFR740L3RH electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 25 ma, v ce = 3 v, f = 2 ghz f t - 42 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.09 0.15 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.18 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.38 - minimum noise figure i c = 8 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 8 ma, v ce = 3 v, f = 6 ghz, z s = z sopt nf min - - 0.5 0.8 - - db power gain, maximum stable 1) i c = 25 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 24.5 - db power gain, maximum available 1) i c = 25 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 15 - db transducer gain i c = 25 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 6 ghz | s 21e | 2 - - 22 12.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 25 ma, z s = z l =50 ? , f = 1 . 8 ghz ip 3 - 25 - dbm 1db compression point at output i c = 25 ma, v ce = 3 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 11 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2010-09-08 4 BFR740L3RH total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 135 150 0 20 40 60 80 100 120 140 160 180 t s [c] ptot [mw] permissible puls load r thjs = ? ( t p ) 10 ?7 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 tp [s] r thjs [k/w] d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0 t p t d=t p /t permissible pulse load p totmax / p totdc = ? ( t p ) 10 ?7 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 0 10 1 10 2 tp [s] p totmax /p totdc d = 0 d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 t p t d=t p /t collector-base capacitance c cb = ? ( v cb ) f = 1 mhz 0 2 4 6 8 10 12 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 v cb [v] c cb [pf]
2010-09-08 5 BFR740L3RH third order intercept point ip 3 = ? ( i c ) (output, z s = z l = 50 ? ) v ce = parameter, f = 1.8 ghz 0 5 10 15 20 25 30 35 0 3 6 9 12 15 18 21 24 27 30 i c [ma] ip 3 [dbm] 1.00v 2.00v 3.00v 4.00v transition frequency f t = ? ( i c ) v ce = parameter, f = 2 ghz 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 i c [ma] f t [ghz] 0.50v 0.75v 1.00v 2 v to 4v power gain g ma , g ms = ? ( f ) v ce = 3 v, i c = 25 ma 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 45 f [ghz] g [db] g ms g ma |s 21 | 2 power gain g ma , g ms = ? ( i c ) v ce = 3 v f = parameter 0 5 10 15 20 25 30 35 10 12 14 16 18 20 22 24 26 28 30 32 34 i c [ma] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz
2010-09-08 6 BFR740L3RH power gain g ma , g ms = ? ( v ce ) i c = 25 ma f = parameter 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 4 8 12 16 20 24 28 32 36 v ce [v] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz minimum noise figure nf min = ? ( i c ) v ce = 3 v, f = parameter z s = z sopt 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [db] i c [ma] f = 0.9ghz f = 4ghz f = 2.4ghz f = 6ghz f = 5ghz f = 1.8ghz noise figure f = ? ( i c ) v ce = 3v, f = 1.8 ghz 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i c [ma] f [db] z s = 50 ? z s = z sopt minimum noise figure nf min = ? ( f ) v ce = 3v, z s = z sopt
2010-09-08 7 BFR740L3RH source impedance for min. noise figure vs. frequency v ce = 3 v, i c = 8 ma / 25 ma
2010-09-08 8 BFR740L3RH spice gp (gummel-poon) for the spice gummel poon (gp) model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the BFR740L3RH spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already contains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFR740L3RH spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. besides the dc characteristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
2010-09-08 9 BFR740L3RH package tslp-3-9 package outline foot print marking layout (example) 2 3 1 pin 1 top view bottom view 2 1 0.035 0.5 3 0.575 1) 0.035 0.4 1) 0.035 2x 0.25 1) 0.35 0.035 2 x 0.15 1) marking 1) dimension applies to plated terminal 0.31 -0.02 +0.01 0.05 0.05 0.05 1 0.6 0.05 reel ?180 mm = 15.000 pieces/reel standard packing bfr705l3rh type code pin 1 marking laser marking 0.8 4 1.2 0.35 pin 1 marking 8 for board assembly information please refer to infineon website "packages" stencil apertures copper solder mask 0.38 0.2 0.315 0.95 0.5 0.17 0.255 0.2 0.45 0.225 1 0.6 0.225 0.15 0.35 0.2 r0.1 r0.19
2010-09-08 10 BFR740L3RH datasheet revision history: 8 september 2010 this datasheet replaces the revision from 30 march 2007. the product itself has not been changed and the device characteristics remain unchanged. only the product description and information available in the datasheet has been expanded and updated. previous revision 30 march 2007 page subject (changes since last revision) 1 aec q101 label removed 2 typical values for leakage currents included, values for maximum leakage currents reduced 4 spice model parameters shifted from datasheet to the internet simulation data section 6,7 nfmin and gammaopt charts updated
2010-09-08 11 BFR740L3RH edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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