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document no. e0705e20 (ver. 2.0) date published july 2005 (k) japan printed in japan url: http://www.elpida.com ? elpida memory, inc. 2005 data sheet 512m bits ddr2 sdram ede5116afse (32m words 16 bits) description the ede5116afse is a 512m bits ddr2 sdram organized as 8,388,608 words 16 bits 4 banks. it is packaged in 84-ball fbga ( bga ? ) package. features ? power supply: vdd, vddq = 1.8v 0.1v ? double-data-rate architecture: two data transfers per clock cycle ? bi-directional, differential data strobe (dqs and /dqs) is transmitted/received with data, to be used in capturing data at the receiver ? dqs is edge aligned with data for reads: center- aligned with data for writes ? differential clock inputs (ck and /ck) ? dll aligns dq and dqs transitions with ck transitions ? commands entered on each positive ck edge: data and data mask referenced to both edges of dqs ? four internal banks for concurrent operation ? data mask (dm) for write data ? burst lengths: 4, 8 ? /cas latency (cl): 3, 4, 5 ? auto precharge operation for each burst access ? auto refresh and self refresh modes ? average refresh period ? 7.8 s at 0 c tc + 85 c ? 3.9 s at + 85 c < tc + 95 c ? sstl_18 compatible i/o ? posted cas by programmable additive latency for better command and data bus efficiency ? off-chip-driver impedance ad justment and on-die- termination for better signal quality ? /dqs can be disabled for single-ended data strobe operation. ? fbga ( bga) package with lead free solder (sn-ag-cu) ? rohs compliant
ede5116afse data sheet e0705e20 (ver. 2.0) 2 ordering information part number mask version organization (words bits) internal banks speed bin (cl-trcd-trp) package ede5116afse-6e-e EDE5116AFSE-5C-E ede5116afse-4a-e f 32m 16 4 ddr2-667 (5-5-5) ddr2-533 (4-4-4) ddr2-400 (3-3-3) 84-ball fbga ( bga) part number elpida memory density / bank 51: 512mb /4-bank organization 16: x16 power supply, interface a: 1.8v, sstl_18 die rev. package se: fbga ( bga with back cover) speed 6e: ddr2-667 (5-5-5) 5c: ddr2-533 (4-4-4) 4a: ddr2-400 (3-3-3) product family e: ddr2 type d: monolithic device e d e 51 16 a f se - 6e - e environment code e: lead free
ede5116afse data sheet e0705e20 (ver. 2.0) 3 pin configurations /xxx indicates active low signal. a b c d e f g h j k l vdd 1 vddq vdd vddl 2 vssq udm dq14 dq9 vssq dq12 nc vref 3 vss nc vddq dq11 vss cke /we vss 7 vssq udqs vddq dq10 vssq /ras 8 /udqs vssq dq15 dq8 vssq dq13 /ldqs /ck m n p r vdd a12 nc nc nc 9 vddq vddq dq6 dq4 vssq dq1 vddq vssq ldm vddq dq3 ldqs vddq vssq dq0 vddq dq2 vssq dq5 dq7 vddq vssdl ck vdd vss a10 a3 a7 a1 a5 a9 a2 a6 a11 a0 a4 a8 vdd vss (top view) 84-ball fbga ( bga) ba0 ba1 /cas /cs nc odt pin name function pin name function a0 to a12 address inputs vdd supply voltage for internal circuit ba0, ba1 bank select vss ground for internal circuit dq0 to dq15 data input/output v ddq supply voltage for dq circuit udqs, /udqs ldqs, /ldqs differential data strobe vssq ground for dq circuit /cs chip select vref input reference voltage /ras, /cas, /we command input vddl supply voltage for dll circuit cke clock enable vssdl ground for dll circuit ck, /ck differential clock input nc* 1 no connection udm, ldm write data mask nu* 2 not usable odt odt control notes: 1. not internally connected with die. 2. don?t use other than reserved functions.
ede5116afse data sheet e0705e20 (ver. 2.0) 4 contents description.................................................................................................................... .................................1 features....................................................................................................................... ..................................1 ordering in format ion........................................................................................................... ...........................2 part nu mber .................................................................................................................... ..............................2 pin config urations ............................................................................................................. ............................3 electrical sp ecifications...................................................................................................... ...........................5 block diagram .................................................................................................................. ...........................15 pin function................................................................................................................... ..............................16 command oper ation .............................................................................................................. .....................18 simplified stat e diag ram ....................................................................................................... ......................25 operation of ddr2 s dram ........................................................................................................ ................26 package drawing ................................................................................................................ ........................62 recommended solder ing conditions............................................................................................... ...........63
ede5116afse data sheet e0705e20 (ver. 2.0) 5 electrical specifications ? all voltages are referenced to vss (gnd) ? execute power-up and initialization sequence before proper device oper ation is achieved. absolute maximum ratings parameter symbol rating unit notes power supply voltage vdd ? 1.0 to +2.3 v 1 power supply voltage for output vddq ? 0.5 to +2.3 v 1 input voltage vin ? 0.5 to +2.3 v 1 output voltage vout ? 0.5 to +2.3 v 1 storage temperature tstg ? 55 to +100 c 1, 2 power dissipation pd 1.0 w 1 short circuit output current iout 50 ma 1 notes: 1. stresses greater than those listed under abso lute maximum ratings may cause permanent damage to the device. this is a stress rating only and functi onal operation of the devic e at these or any other conditions above those indicated in the operational sectio ns of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. storage temperature is the case surface te mperature on the center/t op side of the dram. caution exposing the device to stress above those listed in absolute maximum ratings could cause permanent damage. the device is not meant to be operated under conditions outside the limits described in the operational section of this specifi cation. exposure to absolute maximum rating conditions for extended periods may affect device reliability. operating temperature condition parameter symbol rating unit notes operating case temperature tc 0 to +95 c 1, 2 notes: 1. operating tem perature is the case surface temperat ure on the center/top side of the dram. 2. supporting 0c to +85c with full ac and dc specifications. supporting 0c to +85c and being able to extend to +95c with doubling auto-refresh commands in frequency to a 32ms period (trefi = 3.9 s) and higher temperature self-refresh entry via a7 "1" on emrs (2).
ede5116afse data sheet e0705e20 (ver. 2.0) 6 recommended dc operating conditions (sstl_18) parameter symbol min. typ. max. unit notes supply voltage vdd 1.7 1.8 1.9 v 4 supply voltage for output vddq 1.7 1.8 1.9 v 4 input reference voltage vref 0.49 vddq 0.50 vddq 0.51 vddq v 1, 2 termination voltage vtt vref ? 0.04 vref vref + 0.04 v 3 dc input logic high vih (dc) vref + 0.125 ? vddq + 0.3 v dc input low vil (dc) ? 0.3 ? vref ? 0.125 v ac input logic high -6e vih (ac) vref + 0.200 ? ? v -5c, -4a vih (ac) vref + 0.250 ? ? v ac input low -6e vil (ac) ? ? vref ? 0.200 v -5c, -4a vil (ac) ? ? vref ? 0.250 v notes: 1. the value of vref may be selected by the user to provide optimum noise margin in the system. typically the value of vref is expected to be about 0.5 vddq of the transmitting device and vref are expected to track variations in vddq. 2. peak to peak ac noise on vref may not exceed 2% vref (dc). 3. vtt of transmitting device must track vref of receiving device. 4. vddq tracks with vdd, vddl tracks with vdd. ac parameters are measur ed with vdd, vddq and vddl tied together.
ede5116afse data sheet e0705e20 (ver. 2.0) 7 dc characteristics 1 (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v) parameter symbol grade max. unit test condition operating current (act-pre) idd0 -6e -5c -4a 120 110 105 ma one bank; tck = tck (idd), trc = trc (idd), tras = tras min.(idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data bus inputs are switching operating current (act-read-pre) idd1 -6e -5c -4a 140 130 125 ma one bank; iout = 0ma; bl = 4, cl = cl(idd), al = 0; tck = tck (idd), trc = trc (idd), tras = tras min.(idd); trcd = trcd (idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data pattern is same as idd4w precharge power-down standby current idd2p -6e -5c -4a 10 10 8 ma all banks idle; tck = tck (idd); cke is l; other control and address bus inputs are stable; data bus inputs are floating precharge quiet standby current idd2q -6e -5c -4a 30 25 20 ma all banks idle; tck = tck (idd); cke is h, /cs is h; other control and address bus inputs are stable; data bus inputs are floating idle standby current idd2n -6e -5c -4a 35 30 25 ma all banks idle; tck = tck (idd); cke is h, /cs is h; other control and address bus inputs are switching; data bus inputs are switching idd3p-f -6e -5c -4a 35 30 30 ma fast pdn exit mrs(12) = 0 active power-down standby current idd3p-s -6e -5c -4a 20 20 20 ma all banks open; tck = tck (idd); cke is l; other control and address bus inputs are stable; data bus inputs are floating slow pdn exit mrs(12) = 1 active standby current idd3n -6e -5c -4a 60 50 50 ma all banks open; tck = tck (idd), tras = tras max.(idd), trp = trp (idd); cke is h, /cs is h between valid commands; other control and address bus inputs are switching; data bus inputs are switching operating current (burst read operating) idd4r -6e -5c -4a 230 195 160 ma all banks open, continuous burst reads, iout = 0ma; bl = 4, cl = cl(idd), al = 0; tck = tck (idd), tras = tras max.(idd), trp = trp (idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data pattern is same as idd4w operating current (burst write operating) idd4w -6e -5c -4a 230 195 160 ma all banks open, continuous burst writes; bl = 4, cl = cl(idd), al = 0; tck = tck (idd), tras = tras max.(idd), trp = trp (idd); cke is h, /cs is h between valid commands; address bus inputs are switching; data bus inputs are switching
ede5116afse data sheet e0705e20 (ver. 2.0) 8 parameter symbol grade max. unit test condition auto-refresh current idd5 -6e -5c -4a 270 250 230 ma tck = tck (idd); refresh command at every trfc (idd) interval; cke is h, /cs is h between valid commands; other control and address bus inputs are switching; data bus inputs are switching self-refresh current idd6 6 ma self refresh mode; ck and /ck at 0v; cke 0.2v; other control and address bus inputs are floating; data bus inputs are floating operating current (bank interleaving) idd7 -6e -5c -4a 475 390 315 ma all bank interleaving reads, iout = 0ma; bl = 4, cl = cl(idd), al = trcd (idd) ? 1 tck (idd); tck = tck (idd), trc = trc (idd), trrd = trrd(idd), trcd = 1 tck (idd); cke is h, cs is h between valid commands; address bus inputs are stable during deselects; data pattern is same as idd4w; notes: 1. idd specificati ons are tested after the device is properly initialized. 2. input slew rate is specifie d by ac input test condition. 3. idd parameters are spec ified with odt disabled. 4. data bus consists of dq, udm, ldm, udqs, ldqs , /udqs and /ldqs. idd values must be met with all combinations of emrs bits 10 and 11. 5. definitions for idd l is defined as vin vil (ac) (max.) h is defined as vin vih (ac) (min.) stable is defined as inputs stable at an h or l level floating is defined as inputs at vref = vddq/2 switching is defined as: inputs changing between h and l every other clock cycle (once per two clocks) for address and control signals, and inputs changing between h and l every othe r data transfer (once per clock) for dq signals not including masks or strobes. 6. refer to ac timing for idd test conditions. ac timing for idd test conditions for purposes of idd testing, the foll owing parameters are to be utilized. ddr2-667 ddr2-533 ddr2-400 parameter 5-5-5 4-4-4 3-3-3 unit cl (idd) 5 4 3 tck trcd (idd) 15 15 15 ns trc (idd) 60 60 55 ns trrd (idd) 10 10 10 ns tck (idd) 3 3.75 5 ns tras (min.) (idd) 45 45 40 ns tras (max.) (idd) 70000 70000 70000 ns trp (idd) 15 15 15 ns trfc (idd) 105 105 105 ns
ede5116afse data sheet e0705e20 (ver. 2.0) 9 dc characteristics 2 (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v) parameter symbol value unit notes input leakage current ? ili ? 2 a vdd vin vss output leakage current ? ilo ? 5 a vddq vout vss minimum required output pull-up under ac test load voh vtt + 0.603 v 5 maximum required output pull-down under ac test load vol vtt ? 0.603 v 5 output timing measurement reference level votr 0.5 vddq v 1 output minimum sink dc current iol +13.4 ma 3, 4, 5 output minimum source dc current ioh ? 13.4 ma 2, 4, 5 notes: 1. the vddq of the dev ice under test is referenced. 2. vddq = 1.7v; vout = 1.42v. 3. vddq = 1.7v; vout = 0.28v. 4. the dc value of vref applied to the receiving device is expected to be set to vtt. 5. after ocd calibration to 18 ? at tc = 25 c, vdd = vddq = 1.8v. dc characteristics 3 (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v) parameter symbol min. max. unit notes ac differential input voltage vid (ac) 0.5 vddq + 0.6 v 1, 2 ac differential cross point voltage vix (ac) 0.5 vddq ? 0.175 0.5 vddq + 0.175 v 2 ac differential cross point voltage vox (ac) 0.5 vddq ? 0.125 0.5 vddq + 0.125 v 3 notes: 1. vid(ac) specifies the input differential voltage |vtr -vcp| r equired for switching, where vtr is the true input signal (such as ck, udqs or ldqs) and vcp is the complementary input signal (such as /ck, /udqs or /ldqs). the minimum value is equal to vih (ac) ? vil(ac). 2. the typical value of vix( ac) is expected to be about 0.5 vddq of the transmitting device and vix(ac) is expected to track variations in vddq . vix(ac) i ndicates the voltage at which differential input signals must cross. 3. the typical value of vox( ac) is expected to be about 0.5 vddq of the transmitting device and vox(ac) is expected to track variations in vddq . vox(ac) indicates the volt age at which differential output signals must cross. crossing point vssq vtr vcp vid vix or vox vddq differential signal levels* 1, 2
ede5116afse data sheet e0705e20 (ver. 2.0) 10 odt dc electrical characteristics (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v) parameter symbol min typ max unit note rtt effective impedance value for emrs (a6, a2) = 0, 1 ; 75 ? rtt1(eff) 60 75 90 ? 1 rtt effective impedance value for emrs (a6, a2) = 1, 0 ; 150 ? rtt2(eff) 120 150 180 ? 1 rtt effective impedance value for emrs (a6, a2) = 1, 1 ; 50 ? rtt3(eff) 40 50 60 ? 1 deviation of vm with respect to vddq/2 ? vm ? 6 ? + 6 % 1 note: 1. test condition for rtt measurements. measurement definition for rtt(eff) apply vih (ac) and vil (ac) to test pin separately, th en measure current i(vih(ac)) and i(vil(ac)) respectively. vih(ac), and vddq values defined in sstl _ 18. vih(ac) ? vil(ac) i(vih(ac)) ? i(vil(ac)) rtt(eff) = measurement definition for ? vm measure voltage (vm) at test pin (midpoint) with no load. 2 vm vddq ? vm = 100% ? 1 ocd default characteristics (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v) parameter min typ max unit notes output impedance 12.6 18 23.4 ? 1 pull-up and pull-down mismatch 0 ? 4 ? 1, 2 output slew rate 1.5 ? 5 v/ns 3, 4 notes: 1. impedance measurement condition for output source dc current: vddq = 1.7v; vout = 1420mv; (vout ? vddq)/ioh must be less than 23.4 ? for values of vout between vddq and vddq ? 280mv. impedance measurement condition for output sink dc current: vddq = 1.7v; vout = 280mv; vout/iol must be less than 23.4 ? for values of vout between 0v and 280mv. 2. mismatch is absolute value between pull up and pu ll down, both are measured at same temperature and voltage. 3. slew rate measured from vil(ac) to vih(ac). 4. the absolute value of the slew rate as measured fr om dc to dc is equal to or greater than the slew rate as measured from ac to ac. this is guaranteed by design and characterization.
ede5116afse data sheet e0705e20 (ver. 2.0) 11 pin capacitance (ta = 25 c, vdd, vddq = 1.8v 0.1v) parameter symbol pins min. max. unit notes clk input pin capacitance cck ck, /ck 1.0 2.0 pf 1 input pin capacitance cin /ras, /cas, /we, /cs, cke, odt, address 1.0 2.0 pf 1 input/output pin capacitance -6e ci/o dq, udqs, /udqs, ldqs, /ldqs, 2.5 3.5 pf 2 -5c, -4a udm, ldm 2.5 4.0 pf 2 notes: 1. matching within 0.25pf. 2. matching within 0.50pf.
ede5116afse data sheet e0705e20 (ver. 2.0) 12 ac characteristics (tc = 0 c to +85 c, vdd, vddq = 1.8v 0.1v, vss, vssq = 0v) -6e -5c -4a frequency (mbps) 667 533 400 parameter symbol min. max. min. max. min. max. unit notes /cas latency cl 5 5 4 5 3 5 tck active to read or write command delay trcd 15 ? 15 ? 15 ? ns precharge command period trp 15 ? 15 ? 15 ? ns active to active/auto refresh command time trc 60 ? 60 ? 55 ? ns dq output access time from ck, /ck tac ? 450 +450 ? 500 +500 ? 600 +600 ps dqs output access time from ck, /ck tdqsck ? 400 +400 ? 450 +450 ? 500 +500 ps ck high-level width tch 0.45 0.55 0.45 0.55 0.45 0.55 tck ck low-level width tcl 0.45 0.55 0.45 0.55 0.45 0.55 tck ck half period thp min. (tcl, tch) ? min. (tcl, tch) ? min. (tcl, tch) ? ps clock cycle time tck 3000 8000 3750 8000 5000 8000 ps dq and dm input hold time tdh 175 ? 225 ? 275 ? ps 5 dq and dm input setup time tds 100 ? 100 ? 150 ? ps 4 control and address input pulse width for each input tipw 0.6 ? 0.6 ? 0.6 ? tck dq and dm input pulse width for each input tdipw 0.35 ? 0.35 ? 0.35 ? tck data-out high-impedance time from ck,/ck thz ? tac max. ? tac max. ? tac max. ps data-out low-impedance time from ck,/ck tlz tac min. tac max. tac min. ta c max. tac min. tac max. ps dqs-dq skew for dqs and associated dq signals tdqsq ? 240 ? 300 ? 350 ps dq hold skew factor tqhs ? 340 ? 400 ? 450 ps dq/dqs output hold time from dqs tqh thp ? tqhs ? thp ? tqhs ? thp ? tqhs ? ps write command to first dqs latching transition tdqss wl ? 0.25 wl + 0.25 wl ? 0.25 wl + 0.25 wl ? 0.25 wl + 0.25 tck dqs input high pulse width tdqsh 0.35 ? 0.35 ? 0.35 ? tck dqs input low pulse width tdqsl 0.35 ? 0.35 ? 0.35 ? tck dqs falling edge to ck setup time tdss 0.2 ? 0.2 ? 0.2 ? tck dqs falling edge hold time from ck tdsh 0.2 ? 0.2 ? 0.2 ? tck mode register set command cycle time tmrd 2 ? 2 ? 2 ? tck write postamble twpst 0.4 0.6 0.4 0.6 0.4 0.6 tck write preamble twpre 0.35 ? 0.35 ? 0.35 ? tck address and control input hold time tih 275 ? 375 ? 475 ? ps 5 address and control input setup time tis 200 ? 250 ? 350 ? ps 4 read preamble trpre 0.9 1.1 0.9 1.1 0.9 1.1 tck read postamble trpst 0.4 0.6 0.4 0.6 0.4 0.6 tck active to precharge command tras 45 70000 45 70000 40 70000 ns active to auto-precharge delay trap trcd min. ? trcd min. ? trcd min. ? ns
ede5116afse data sheet e0705e20 (ver. 2.0) 13 -6e -5c -4a frequency (mbps) 667 533 400 parameter symbol min. max. min. max. min. max. unit notes active bank a to active bank b command period trrd 10 ? 10 ? 10 ? ns write recovery time twr 15 ? 15 ? 15 ? ns auto precharge write recovery + precharge time tdal (twr/tck)+ (trp/tck) ? (twr/tck)+ (trp/tck) ? (twr/tck)+ (trp/tck) ? tck 1 internal write to read command delay twtr 7.5 ? 7.5 ? 10 ? ns internal read to precharge command delay trtp 7.5 ? 7.5 ? 7.5 ? ns exit self refresh to a non-read command txsnr trfc + 10 ? trfc + 10 ? trfc + 10 ? ns exit self refresh to a read command txsrd 200 ? 200 ? 200 ? tck exit precharge power down to any non-read command txp 2 ? 2 ? 2 ? tck exit active power down to read command txard 2 ? 2 ? 2 ? tck 3 exit active power down to read command (slow exit/low power mode) txards 7 ? al ? 6 ? al ? 6 ? al ? tck 2, 3 cke minimum pulse width (high and low pulse width) tcke 3 ? 3 ? 3 ? tck output impedance test driver delay toit 0 12 0 12 0 12 ns auto refresh to active/auto refresh command time trfc 105 ? 105 ? 105 ? ns average periodic refresh interval (0 c tc +85 c) trefi ? 7.8 ? 7.8 ? 7.8 s (+85 c < tc +95 c) trefi ? 3.9 ? 3.9 ? 3.9 s minimum time clocks remains on after cke asynchronously drops low tdelay tis + tck + tih ? tis + tck + tih ? tis + tck + tih ? ns notes: 1. for each of the terms above, if not alr eady an integer, round to the next higher integer. 2. al: additive latency. 3. mrs a12 bit defines which active power down exit timing to be applied. 4. the figures of input waveform timing 1 and 2 are referenced from the input signal crossing at the vih(ac) level for a rising signal and vil(ac) for a falling signal applied to the device under test. 5. the figures of input waveform timing 1 and 2 are referenced from the input signal crossing at the vih(dc) level for a rising signal and vil(dc) for a falling signal applied to the device under test. dqs /dqs tds tdh tds tdh vddq vih (ac)(min.) vih (dc)(min.) vil (dc)(max.) vil (ac)(max.) vss vref ck /ck tis tih tis tih vddq vih (ac)(min.) vih (dc)(min.) vil (dc)(max.) vil (ac)(max.) vss vref input waveform timing 1 (tds, tdh) input waveform timing 2 (tis, tih)
ede5116afse data sheet e0705e20 (ver. 2.0) 14 odt ac electrical characteristics parameter symbol min max unit notes odt turn-on delay taond 2 2 tck odt turn-on -6e taon tac(min) tac(max) + 700 ps 1 -5c, -4a taon tac(min) tac(max) + 1000 ps 1 odt turn-on (power down mode) taonpd tac(min) + 2000 2tck + tac(max) + 1000 ps odt turn-off delay taofd 2.5 2.5 tck odt turn-off taof tac(min) tac(max) + 600 ps 2 odt turn-off (power down mode) taofpd tac(min) + 2000 2.5tck + tac(max) + 1000 ps odt to power down entry latency tanpd 3 3 tck odt power down exit latency taxpd 8 8 tck notes: 1. odt turn on time min is when the device le aves high impedance and odt resistance begins to turn on. odt turn on time max is when the odt resistance is fully on. both are measured from taond. 2. odt turn off time min is when the device starts to turn off odt resistance. odt turn off time max is when the bus is in high impedance. both are measured from taofd. ac input test conditions parameter symbol value unit notes input reference voltage vref 0.5 vddq v 1 input signal maximum peak to peak swing vswing(max.) 1.0 v 1 input signal maximum slew rate slew 1.0 v/ns 2, 3 notes: 1. input waveform timing is referenced to the input signal crossing through the vref level applied to the device under test. 2. the input signal minimum slew rate is to be ma intained over the range from vil(dc) (max.) to vih(ac) (min.) for rising edges and the range from vih(dc) (min. ) to vil(ac) (max.) for falling edges as shown in the below figure. 3. ac timings are referenced with input waveforms switching from vil(ac) to vih(ac) on the positive transitions and vih(ac) to vil( ac) on the negative transitions. vswing(max.) ? tr ? tf start of falling edge input timing start of rising edge input timing vih (dc) (min.) ? vil (ac) (max.) ? tf falling slew = vddq vih (ac)(min.) vih (dc)(min.) vil (dc)(max.) vil (ac)(max.) vss vref vih (ac) min. ? vil (dc) (max.) ? tr rising slew = ac input test signal wave forms vtt measurement point dq rt =25 ? output load
ede5116afse data sheet e0705e20 (ver. 2.0) 15 block diagram a0 to a12, ba0, ba1 /cs /ras /cas /we command decoder input & output buffer latch circuit data control circuit column decoder row decoder memory cell array bank 0 sense amp. bank 1 bank 2 bank 3 control logic column address buffer and burst counter row address buffer and refresh counter mode register clock generator dq ck /ck cke dqs, /dqs dm dll ck, /ck odt
ede5116afse data sheet e0705e20 (ver. 2.0) 16 pin function ck, /ck (input pins) ck and /ck are differential clock inputs. all address and c ontrol input signals are sampled on the crossing of the positive edge of ck and negative edge of /ck. output (read) data is referenced to the crossings of ck and /ck (both directions of crossing). /cs (input pin) all commands are masked when /cs is registered high. /cs provides for external rank selection on systems with multiple ranks. /cs is considered part of the command code. /ras, /cas, /we (input pins) /ras, /cas and /we (along with /cs) define the command being entered. a0 to a12 (input pins) provided the row address for active commands and t he column address and auto precharge bit for read/write commands to select one location out of the memory array in the respective bank. the address inputs also provide the op-code during mode register set commands. [address pins table] address (a0 to a12) part number row address column address note ede5116afse ax0 to ax12 ay0 to ay9 a10 (ap) (input pin) a10 is sampled during a precharge command to determine whether the precharge applies to one bank (a10 = low) or all banks (a10 = high). if only one bank is to be precharged, the bank is selected by ba0, ba1. ba0, ba1 (input pins) ba0 and ba1 define to which bank an active, read, writ e or precharge command is being applied. ba0 also determines if the mode register or extended mode regi ster is to be accessed during a mrs or emrs cycle. [bank select signal table] ba0 ba1 bank 0 l l bank 1 h l bank 2 l h bank 3 h h remark: h: vih. l: vil. cke (input pin) cke high activates, and cke low deactivates, internal cl ock signals and device input buffers and output drivers. taking cke low provides precharge power-down and self re fresh operation (all banks idle), or active power-down (row active in any bank). cke is synchronous for power down entry and exit, and for self refresh entry. cke is asynchronous for self refresh exit. cke must be maintain ed high throughout read and wr ite accesses. input buffers, excluding ck, /ck and cke are disabled during power-down. input buffers, excluding cke, are disabled during self- refresh.
ede5116afse data sheet e0705e20 (ver. 2.0) 17 udm and ldm (input pins) dms are input mask signals for write data. udm controls upper byte (dq8 to dq15) and ldm controls lower byte (dq0 to dq7). input data is masked when dms are samp led high coincident with that input data during a write access. dms are sampled on both edges of dqs. alt hough dm pins are input only, the dm loading matches the dq and dqs loading. in this datas heet, dm represents udm and ldm. dq (input/output pins) bi-directional data bus. udqs, /udqs, ldqs, /ldqs (input/output pins) output with read data, input with write data for source synchronous operation. udqs, /udqs and ldqs, /ldqs control upper byte (dq8 to dq15) and lower byte (dq0 to dq7). edge-aligned with r ead data, centered in write data. used to capture write data. /dqs can be disabled by emrs. in this datasheet, dqs represents udqs and ldqs, /dqs represents /udqs and /ldqs. odt (input pins) odt (on die termination control) is a registered high signal that enables termination resistance internal to the ddr2 sdram. when enabled, odt is applied to each dq, udqs, ldqs, /udqs, /ldqs, udm, and ldm signal. the odt pin will be ignored if the extended mode r egister (emrs) is programmed to disable odt. vdd, vss, vddq, vssq (power supply) vdd and vss are power supply pins for internal circuits . vddq and vssq are power supply pins for the output buffers. vddl and vssdl (power supply) vddl and vssdl are power supply pins for dll circuits. vref (power supply) sstl_18 reference voltage: (0.50 0.01) vddq
ede5116afse data sheet e0705e20 (ver. 2.0) 18 command operation command truth table the ddr2 sdram recognizes the following commands spec ified by the /cs, /ras, /cas, /we and address pins. cke function symbol previous cycle current cycle /cs /ras /cas /we ba1, ba0 a12 to a11 a10 a0 to a9 notes mode register set mrs h h l l l l ba0 = 0 and mrs op code 1 extended mode register set emrs h h l l l l ba0 = 1 and emrs op code 1 auto refresh ref h h l l l h 1 self refresh entry self h l l l l h 1 self refresh exit selfx l h h 1, 6 l h l h h h single bank precharge pre h h l l h l ba l 1, 2 precharge all banks pall h h l l h l h 1 bank activate act h h l l h h ba row address 1, 2 write writ h h l h l l ba column l column 1, 2, 3 write with auto precharge writa h h l h l l ba column h column 1, 2, 3 read read h h l h l h ba column l column 1, 2, 3 read with auto precharge reada h h l h l h ba column h column 1, 2, 3 no operation nop h l h h h 1 device deselect desl h h 1 power down mode entry pden h l h 1, 4 h l l h h h power down mode exit pdex l h h 1, 4 l h l h h h remark: h = vih. l = vil. = vih or vil notes: 1. all ddr2 commands are defined by states of /c s, /ras, /cas, /we and cke at the rising edge of the clock. 2. bank select (ba0, ba1), dete rmine which bank is to be operated upon. 3. burst reads or writes should no t be terminated other than specified as reads interrupted by a read in burst read command [read] or writes interrupted by a write in burst write command [writ]. 4. the power down mode does not perform any refresh operations. the duration of power down is therefore limited by the refresh requirements of the device. one clock delay is required for mode entry and exit. 5. the state of odt does not affect the states described in this table. the odt function is not available during self-refresh. 6. self refresh exit is asynchronous.
ede5116afse data sheet e0705e20 (ver. 2.0) 19 cke truth table cke current state* 2 previous cycle (n-1)* 1 current cycle (n) *1 command(n) *3 /cs, /ras, /cas, /we operation (n) *3 notes power down l l maintain power down 11, 13, 15 l h desl or nop power down exit 4, 8, 11, 13 self refresh l l maintain self refresh 11, 15 l h desl or nop self refresh exit 4, 5, 9 bank active h l desl or nop active power down entry 4, 8, 10, 11, 13 all banks idle h l desl or nop precharge power down entry 4, 8, 10, 11, 13 h l self self refresh entry 6, 9, 11, 13 any state other than listed above h h refer to the command truth table 7 remark: h = vih. l = vil. = don?t care notes: 1. cke (n) is the logic st ate of cke at clock edge n; cke (n ? 1) was the state of cke at the previous clock edge. 2. current state is the st ate of the ddr sdram immediat ely prior to clock edge n. 3. command (n) is the command registered at clock ed ge n, and operation (n) is a result of command (n). 4. all states and sequences not sh own are illegal or reserved unless explicitly described elsewhere in this document. 5. on self refresh exit, [desl] or [nop] commands must be issued on every clock edge occurring during the txsnr period. read commands may be issued only after txsrd (200 clocks) is satisfied. 6. self refresh mode can only be ent ered from the all banks idle state. 7. must be a legal command as def ined in the command truth table. 8. valid commands for power down entry and exit are [nop] and [desl] only. 9. valid commands for self refresh exit are [nop] and [desl] only. 10. power down and self-refresh can not be entered whil e read or write operations, (extended) mode register set operations or precharge operatio ns are in progress. see section power down and self refresh command for a detailed list of restrictions. 11. minimum cke high time is 3 clocks; minimum cke low time is 3 clocks. 12. the state of odt does not affect the states described in this t able. the odt function is not available during self-refresh. see sect ion odt (on die termination). 13. the power down does not perform any refresh oper ations. the duration of powe r down mode is therefore limited by the refresh requirements outlined in section automatic refresh command. 14. cke must be maintained high while the sdram is in ocd calibration mode. 15. ? ? means ?don?t care? (including floating around vref) in self refresh and power down. however odt must be driven high or low in power down if the od t function is enabled (bit a2 or a6 set to ?1? in emrs(1) ).
ede5116afse data sheet e0705e20 (ver. 2.0) 20 function truth table the following tables show the operations that are perf ormed when each command is issued in each state of the ddr sdram. current state /cs /ras /cas /we address command operation notes idle h desl nop or power down l h h h nop nop or power down l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act row activating l l h l ba, a10 (ap) pre precharge l l h l a10 (ap) pall precharge all banks l l l h ref auto refresh 2 l l l h self self refresh 2 l l l l ba, mrs-opcode mrs mode register accessing 2 l l l l ba, emrs-opcode emrs extended mode register accessing 2 bank(s) active h desl nop l h h h nop nop l h l h ba, ca, a10 (ap) read begin read l h l h ba, ca, a10 (ap) reada begin read l h l l ba, ca, a10 (ap) writ begin write l h l l ba, ca, a10 (ap) writa begin write l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre precharge l l h l a10 (ap) pall precharge all banks l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal read h desl continue burst to end -> row active l h h h nop continue burst to end -> row active l h l h ba, ca, a10 (ap) read burst interrupt 1, 4 l h l h ba, ca, a10 (ap) reada burst interrupt 1, 4 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal 1 l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal
ede5116afse data sheet e0705e20 (ver. 2.0) 21 current state /cs /ras /cas /we address command operation note write h desl continue burst to end -> write recovering l h h h nop continue burst to end -> write recovering l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ burst interrupt 1, 4 l h l l ba, ca, a10 (ap) writa burst interrupt 1, 4 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal 1 l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal read with h desl continue burst to end -> precharging auto precharge l h h h nop continue burst to end -> precharging l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal 1 l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal write with auto precharge h desl continue burst to end ->write recovering with auto precharge l h h h nop continue burst to end ->write recovering with auto precharge l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal 1 l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal
ede5116afse data sheet e0705e20 (ver. 2.0) 22 current state /cs /ras /cas /we address command operation note precharging h desl nop -> enter idle after trp l h h h nop nop -> enter idle after trp l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre nop -> enter idle after trp l l h l a10 (ap) pall nop -> enter idle after trp l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal row activating h desl nop -> enter bank active after trcd l h h h nop nop -> enter bank active after trcd l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal write recovering h desl nop -> enter bank active after twr l h h h nop nop -> enter bank active after twr l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ new write l h l l ba, ca, a10 (ap) writa new write l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal 1 l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal
ede5116afse data sheet e0705e20 (ver. 2.0) 23 current state /cs /ras /cas /we address command operation note write recovering with h desl nop -> enter bank active after twr auto precharge l h h h nop nop -> enter bank active after twr l h l h ba, ca, a10 (ap) read illegal 1 l h l h ba, ca, a10 (ap) reada illegal 1 l h l l ba, ca, a10 (ap) writ illegal 1 l h l l ba, ca, a10 (ap) writa illegal 1 l l h h ba, ra act illegal 1 l l h l ba, a10 (ap) pre illegal 1 l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal refresh h desl nop -> enter idle after trfc l h h h nop nop -> enter idle after trfc l h l h ba, ca, a10 (ap) read illegal l h l h ba, ca, a10 (ap) reada illegal l h l l ba, ca, a10 (ap) writ illegal l h l l ba, ca, a10 (ap) writa illegal l l h h ba, ra act illegal l l h l ba, a10 (ap) pre illegal l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal mode register accessing h desl nop -> enter idle after tmrd l h h h nop nop -> enter idle after tmrd l h l h ba, ca, a10 (ap) read illegal l h l h ba, ca, a10 (ap) reada illegal l h l l ba, ca, a10 (ap) writ illegal l h l l ba, ca, a10 (ap) writa illegal l l h h ba, ra act illegal l l h l ba, a10 (ap) pre illegal l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal
ede5116afse data sheet e0705e20 (ver. 2.0) 24 current state /cs /ras /cas /we address command operation note extended mode h desl nop -> enter idle after tmrd register accessing l h h h nop nop -> enter idle after tmrd l h l h ba, ca, a10 (ap) read illegal l h l h ba, ca, a10 (ap) reada illegal l h l l ba, ca, a10 (ap) writ illegal l h l l ba, ca, a10 (ap) writa illegal l l h h ba, ra act illegal l l h l ba, a10 (ap) pre illegal l l h l a10 (ap) pall illegal l l l h ref illegal l l l h self illegal l l l l ba, mrs-opcode mrs illegal l l l l ba, emrs-opcode emrs illegal remark: h = vih. l = vil. = vih or vil notes: 1. this command may be issued for other banks, depending on the state of the banks. 2. all banks must be in "idle". 3. all ac timing specs must be met. 4. only allowed at the boundary of 4 bits burst. burst interruption at other timings are illegal.
ede5116afse data sheet e0705e20 (ver. 2.0) 25 simplified state diagram initalization auto refresh self refresh mrs emrs trfc trcd tmrd trp mrs pre ref act idle activating precharge bank active wl + bl/2 + twr writa reada write writa writa reada writ writ read read read ckeh ckel ckeh pden ckel pden precharge power down ckel selfx self pre pre pre reada reada active power down automatic sequence command sequence read simplified state diagram
ede5116afse data sheet e0705e20 (ver. 2.0) 26 operation of ddr2 sdram read and write accesses to the ddr2 sdram are burst orient ed; accesses start at a selected location and continue for the fixed burst length of four or eight in a programmed sequence. accesses begin with the registration of an active command, which is then followed by a read or writ e command. the address bits registered coincident with the active command is used to select the bank and row to be accessed (ba0, ba1 select the bank; a0 to a12 select the row). the address bits registered coincident with th e read or write command are us ed to select the starting column location for the burst access and to dete rmine if the auto precharge command is to be issued. prior to normal operation, the ddr2 sdram must be initialized. the following sections provide detailed information covering device initialization; register defini tion, command descriptions and device operation. power on and initialization ddr2 sdrams must be powered up and initialized in a pr edefined manner. operational procedures other than those specified may result in undefined operation. power-up and initialization sequence the following sequence is required for power up and initialization. 1. apply power and attempt to maintain cke below 0.2 vddq and odt * 1 at a low state (all other inputs may be undefined.) ? vdd, vddl and vddq are driven from a single power converter output, and ? vtt is limited to 0.95v max, and ? vref tracks vddq/2. or ? apply vdd before or at the same time as vddl. ? apply vddl before or at the same time as vddq. ? apply vddq before or at the same time as vtt and vref. at least one of these two sets of conditions must be met. 2. start clock and maintain stable condition. 3. for the minimum of 200 s after stable power and clock(ck, /ck), then apply [nop] or [desl] and take cke high. 4. wait minimum of 400ns then issue precharge all co mmand. [nop] or [desl] applied during 400ns period. 5. issue emrs(2) command. (to issue emrs(2) command, provide low to ba0, high to ba1.) 6. issue emrs(3) command. (to issue em rs(3) command, high to ba0 and ba1.) 7. issue emrs to enable dll. (to issue dll enable comman d, provide low to a0, high to ba0 and low to ba1 and a12.) 8. issue a mode register set command for dll reset. (to issue dll reset command, provide high to a8 and low to ba0, ba1, and a12 ) 9. issue precharge all command. 10. issue 2 or more auto-refresh commands. 11. issue a mode register set command with low to a8 to initialize device operation. (i.e. to program operating parameters without resetting the dll.) 12. at least 200 clocks after step 8, ex ecute ocd calibration (off chip dr iver impedance adjustment). if ocd calibration is not used, emrs ocd default command (a9 = a8 = a7 = 1) followed by emrs ocd calibration mode exit command (a9 = a8 = a7 = 0) must be i ssued with other operati ng parameters of emrs. 13. the ddr2 sdram is now ready for normal operation. note: 1. to guarantee odt off, vref must be valid and a low level must be ap plied to the odt pin. command emrs pall mrs trp 400ns tmrd 200 cycles (min) tmrd tmrd trp trfc trfc pall mrs ref ref emrs dll enable dll reset follow ocd flowchart any command ck /ck cke emrs ocd calibration mode exit toit ocd default nop tch tcl tis power up and initialization sequence
ede5116afse data sheet e0705e20 (ver. 2.0) 27 programming the mode register and extended mode registers for application flexibility, burst length, burst type, /cas la tency, dll reset function, write recovery time (twr) are user defined variables and must be programmed with a mode register set command [mrs]. additionally, dll disable function, driver impedance, additive /cas lat ency, odt (on die termination), single-ended strobe, and ocd (off-chip driver impedance adjustment) are also user defined variables and must be programmed with an extended mode register set command [emrs]. contents of the mode register (mr) or extended mode registers (emr (#)) can be altered by reexecuting the mrs and emrs commands. if the user chooses to modify only a subset of the mrs or emrs variables, all variables must be r edefined when the mrs or emrs commands are issued. mrs, emrs and reset dll do not affect array contents , which means reinitialization including those can be executed any time after power-up without affecting array contents. ddr2 sdram mode register set [mrs] the mode register stores the data for controlling the vari ous operating modes of ddr2 sdram. it controls /cas latency, burst length, burst sequence, test mode, dll reset, twr and various ven dor specific options to make ddr2 sdram useful for various applications. the default value of the mode register is not de fined, therefore the mode register must be written after power-up for proper operation. the mode register is written by asserting low on /cs, /ras, /cas, /we, ba0 and ba1, while controllin g the state of address pins a0 to a12. the ddr2 sdram should be in all bank precharge with cke already high prior to writing into the mode register. the mode register set command cycle time (tmrd) is requir ed to complete the write operation to the mode register. the mode register contents can be c hanged using the same command and clock cycle requirements during normal operation as long as all banks are in the precharge state. the mode register is divided into various fields depending on functionality. burst length is defined by a0 to a2 with options of 4 and 8 bit burst lengths. the burst length decodes are compatible with ddr sdram. burst address s equence type is defined by a3, /cas latency is defined by a4 to a6. the ddr2 doesn?t support half clock latency m ode. a7 is used for test mode. a8 is used for dll reset. a7 must be set to low for normal mrs operation. write re covery time twr is defined by a9 to a11. refer to the table for specific codes. notes: 1. ba1 is reserved for future use and must be programmed to 0 when setting the mode register. 2. wr (min.) (write recovery for autoprecharge) is determined by tck (max.) and wr (max.) is determined by tck (mi n.). wr in clock cycles is calculated by dividing twr (in ns) by tck (in ns) and rounding up to the next integer (wr [cycles] = twr (ns) / tck (ns)). the mode register must be programmed to this value. this is also used with trp to determine tdal. 0pd ba0 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 address field 0 * 1 ba1 wr a8 0 1 dll reset no yes dll tm /cas latency bt burst length mode register a7 0 1 mode normal test a6 0 0 0 0 1 1 1 1 /cas latency a5 0 0 1 1 0 0 1 1 a4 0 1 0 1 0 1 0 1 latency reserved reserved reserved 3 4 5 reserved reserved a3 0 1 burst type sequential interleave a12 0 1 active power down exit timing fast exit (use txard timing) slow exit (use txards timing) a2 0 0 burst length a1 1 1 a0 0 1 bl 4 8 a11 0 0 0 0 1 1 1 1 write recovery for autoprecharge a10 0 0 1 1 0 0 1 1 a9 0 1 0 1 0 1 0 1 wr reserved 2 3 4 5 6 reserved reserved ba1 0 0 1 1 mrs mode mrs emrs(1) emrs(2): reserved emrs(3): reserved ba0 0 1 0 1 ddr2 533 ddr2 667 ddr2 800 ddr2 400 mode register set (mrs)
ede5116afse data sheet e0705e20 (ver. 2.0) 28 ddr2 sdram extended mode registers set [emrs] emrs (1) programming the extended mode register (1) stores the data for enabling or disabling the dll, output driver strength, additive latency, odt, /dqs disable, ocd pr ogram. the default value of the extend ed mode register (1) is not defined, therefore the extended mode register (1) must be writte n after power-up for proper operation. the extended mode register (1) is written by asserting low on /cs, /ras, /cas, /we, high on ba0 and low on ba1, while controlling the states of address pins a0 to a12. the ddr2 sdram should be in all bank precharge with cke already high prior to writing into the extended mode register (1). the mode regi ster set command cycle time (t mrd) must be satisfied to complete the write operation to the extended mode register (1). mode register cont ents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in the precharge state. a0 is used for dll enable or disable. a1 is used for enabling a half strength output driver. a3 to a5 determines the additive latency, a7 to a9 are used for ocd control and a10 is used for /dqs disable. a2 and a6 are used for odt setting. notes: 1. a11 is reserved for future use, and must be programmed to 0 when setting the extended mode register. 2. when adjust mode is issued, al from previously set value must be applied. 3. after setting to default, ocd mode needs to be exited by setting a9 to a7 to 000. refer to the chapter off-chip driver (ocd)impedance adjustment for detailed information. ba0 ba1 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 address field 1 0 /dqs ocd program rtt additive latency rtt d.i.c dll extended mode register a10 0 1 /dqs enable enable disable a5 0 0 0 0 1 1 1 1 additive latency a4 0 0 1 1 0 0 1 1 a3 0 1 0 1 0 1 0 1 latency 0 1 2 3 4 reserved reserved reserved a0 0 1 dll enable enable disable ba1 0 0 1 1 mrs mode mrs emrs(1) emrs(2): reserved emrs(3): reserved a6 0 0 1 1 a2 0 1 0 1 rtt (nominal ) odt disabled 75 ? 150 ? 50 ? a9 0 0 0 1 1 driver impedance adjustment a8 0 0 1 0 1 a7 0 1 0 0 1 ocd calibration mode exit drive(1) drive(0) adjust mode* ocd calibration default* a1 0 1 driver strength control output driver impedance control normal weak driver size 100% 60% operation 2 3 0* qoff ba0 0 1 0 1 a12 0 1 qoff output buffers enabled output buffers disabled a10 (/dqs enable) 0 (enable) 1 (disable) dqs dqs dqs /dqs /dqs high-z strobe function matrix 1 emrs (1)
ede5116afse data sheet e0705e20 (ver. 2.0) 29 dll enable/disable the dll must be enabled for normal operation. dll en able is required during power up initialization, and upon returning to normal operation after having the dll disabled. the dll is automatically disabled when entering self- refresh operation and is automatically re-enabled upon exit of self-refresh oper ation. any time the dll is enabled (and subsequently reset), 200 clock cycles must occur before a read command can be issued to allow time for the internal clock to be synchronized with the external clock. failing to wait for synchronization to occur may result in a violation of the tac or tdqsck parameters. emrs (2) programming *1 the extended mode register (2) contro ls refresh related features. the def ault value of the extended mode register (2) is not defined, therefor e the extended mode register (2) must be written after power-up for proper operation. the extended mode register (2) is written by asserting low on cs, /ras, /cas, /we, high on ba1 and low on ba0, while controlling the states of address pins a0 to a12. the ddr2 sdram should be in all bank precharge with cke already high prior to writing into the extended mode register (2). the mode register set command cycle time (tmrd) must be satisfied to complete the write opera tion to the extended mode register (2). mode register contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in the precharge state. address field extended mode register (2) 0* 1 0* 1 srf a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 0 1 ba1 ba0 a12 a7 0 1 high temperature self-refresh rate enable disable enable (optional) note: 1 the rest bits in emrs (2) is reserved for future use and all bits in emrs (2) except a7, ba0 and ba1 must be programmed to 0 when setting the extended mode register (2) during initialization. emrs(2) emrs (3) programming: reserved *1 extended mode register(3) 0* 1 1 1 address field a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 ba1 ba0 a12 note : 1. emrs (3) is reserved for future use and all bits except ba0 and ba1 must be programmed to 0 when setting the mode register during initialization. emrs (3)
ede5116afse data sheet e0705e20 (ver. 2.0) 30 off-chip driver (ocd) impedance adjustment ddr2 sdram supports driver calibration feature and the o cd flow chart is an example of sequence. every calibration mode command should be followed by ?ocd calibration mode exit? before any other command being issued. mrs should be set before entering ocd imped ance adjustment and odt (on die termination) should be carefully controlled depending on system environment. test test all ok all ok need calibration need calibration emrs: ocd calibration mode exit mrs should be set before entering ocd impedance adjustment and odt should be carefully controlled depending on system environment emrs: drive(0) dq & dqs low ; /dqs high emrs: drive(1) dq & dqs high ; /dqs low emrs: ocd calibration mode exit emrs: ocd calibration mode exit emrs : enter adjust mode emrs : enter adjust mode bl=4 code input to all dqs inc, dec, or nop emrs: ocd calibration mode exit bl=4 code input to all dqs inc, dec, or nop emrs: ocd calibration mode exit emrs: ocd calibration mode exit start end ocd flow chart
ede5116afse data sheet e0705e20 (ver. 2.0) 31 extended mode register set for ocd impedance adjustment ocd impedance adjustment can be done using the following em rs mode. in drive mode all outputs are driven out by ddr2 sdram. in drive (1) mode, all dq, dqs signal s are driven high and all /dqs signals are driven low. in drive (0) mode, all dq, dqs signals are driven low and all /dqs signals are driven high. in adjust mode, bl = 4 of operation code data must be us ed. in case of ocd calib ration default, output driver characteristics follow approximate nominal v/i curve for 18 ? output drivers, but are not guaranteed. if tighter control is required, which is controlled within 18 ? 3 ? driver impedance range, ocd must be used. [ocd mode set program] a9 a8 a7 operation 0 0 0 ocd calibration mode exit 0 0 1 drive (1) dq, dqs high and /dqs low 0 1 0 drive (0) dq, dqs low and /dqs high 1 0 0 adjust mode 1 1 1 ocd calibration default ocd impedance adjustment to adjust output driver impedance, cont rollers must issue the adjust emrs command along with a 4bit burst code to ddr2 sdram as in ocd adjustment program table. for this operation, burst length has to be set to bl = 4 via mrs command before activating ocd and controllers must drive this burst code to all dqs at the same time. dt0 in ocd adjustment program table means all dq bits at bit time 0, dt1 at bit time 1, and so forth. the driver output impedance is adjusted for all ddr2 sdram dqs simultaneous ly and after ocd calibration, all dqs of a given ddr2 sdram will be adjusted to the same driver strength setting. the maximu m step count for adjustment is 16 and when the limit is reached, further increment or decre ment code has no effect. the default setting may be any step within the 16-step range. [ocd adjustment program] 4bits burst data inputs to all dqs operation dt0 dt1 dt2 dt3 pull-up driver st rength pull-down driver strength 0 0 0 0 nop nop 0 0 0 1 increase by 1 step nop 0 0 1 0 decrease by 1 step nop 0 1 0 0 nop increase by 1 step 1 0 0 0 nop decrease by 1 step 0 1 0 1 increase by 1 step increase by 1 step 0 1 1 0 decrease by 1 step increase by 1 step 1 0 0 1 increase by 1 step decrease by 1 step 1 0 1 0 decrease by 1 step decrease by 1 step other combinations reserved
ede5116afse data sheet e0705e20 (ver. 2.0) 32 for proper operation of adjust mode, wl = rl ? 1 = al + cl ? 1 clocks and tds/tdh should be met as the output impedance control register set cycle. for input data pattern for adjustment, dt0 to dt3 is a fixed order and not affected by mrs addressing mode (i.e. sequential or interleave). command emrs ocd adjust mode ocd calibration mode exit nop dt0 tds tdh dt1 dt2 dt3 nop emrs ck /ck wl twr dqs, /dqs dq_in output impedance control register set cycle drive mode drive mode, both drive (1) and drive (0), is used for controllers to measure ddr2 sdram driver impedance before ocd impedance adjustment. in this mo de, all outputs are driven out toit after ?enter drive mode? command and all output drivers are turned-off toit after ?ocd calib ration mode exit? command as the ?output impedance measurement/verify cycle?. command enter drivemode ocd calibration mode exit nop ck /ck dqs, /dqs high-z high-z dqs high for drive (1) dqs low for drive (0) toit dq emrs emrs toit dqs high and /dqs low for drive (1), dqs low and /dqs high for drive (0) output impedance measurement/verify cycle
ede5116afse data sheet e0705e20 (ver. 2.0) 33 odt(on die termination) on die termination (odt), is a feature that allows a dra m to turn on/off termination resistance for each dq, udqs, ldqs, /udqs, /ldqs, udm, and ldm signal via the odt c ontrol pin. the odt feature is designed to improve signal integrity of the memory channel by allowing the dram controller to independently turn on/off termination resistance for any or all dram devices. the odt function is turned off and not supported in self-refresh mode. switch sw1, sw2 or sw3 is enabled by odt pin. selection between sw1, sw2 or sw3 is determined by rtt (nominal) in emrs termination included on all dqs, udm, ldm, udqs, ldqs, /udqs and /ldqs pins. target rtt ( ? ) = (rval1) / 2, (rval2) / 2 or (rval3) / 2 dram input buffer vddq vssq sw1 sw1 sw2 rval1 rval1 input pin vddq vssq sw2 rval2 rval2 sw3 vddq vssq sw3 rval3 rval3 functional representation of odt
ede5116afse data sheet e0705e20 (ver. 2.0) 34 ck /ck t0 t1 t2 t3 t4 t5 t6 odt cke internal term res. rtt tis tis taond taofd taon max. taon min. taof min. taof max. taxpd 6tck odt timing for active and standby mode ck /ck t0 t1 t2 t3 t4 t5 t6 odt cke internal term res. rtt tis tis taonpd min. taonpd max. taofpd min. taofpd max. taxpd 6tck odt timing for power down mode
ede5116afse data sheet e0705e20 (ver. 2.0) 35 t-5 t-4 t-3 t-2 t-1 t0 t1 t2 t3 t4 /ck ck cke odt internal term res. internal term res. internal term res. internal term res. tis tis tis odt tis odt odt tis active and standby mode timings to be applied. active and standby mode timings to be applied. power down mode timings to be applied. power down mode timings to be applied. rtt rtt rtt rtt taofpd(max.) taofd taond taonpd(max.) tanpd entering slow exit active power down mode or precharge power down mode. odt timing mode switch at entering power down mode
ede5116afse data sheet e0705e20 (ver. 2.0) 36 t0 t1 t4 t5 t6 t7 /ck ck t8 cke odt internal term res. internal term res. internal term res. internal term res. tis tis tis t9 t10 t11 odt tis odt active and standby mode timings to be applied. active and standby mode timings to be applied. odt tis power down mode timings to be applied. power down mode timings to be applied. exiting from slow active power down mode or precharge power down mode. rtt rtt rtt rtt taxpd taofpd (max.) taonpd (max.) taofd taond odt timing mode switch at exiting power down mode
ede5116afse data sheet e0705e20 (ver. 2.0) 37 bank activate command [act] the bank activate command is issued by holding /cas and /we high with /cs and /ras low at the rising edge of the clock. the bank addresses ba0 and ba1, are used to sele ct the desired bank. the row address a0 through a12 is used to determine which row to activate in the selected bank. the bank activate command must be applied before any read or write operation can be execut ed. immediately after the bank ac tive command, the ddr2 sdram can accept a read or write command on the following clock c ycle. if a r/w command is is sued to a bank that has not satisfied the trcd (min.) specif ication, then additive latency must be pr ogrammed into the device to delay when the r/w command is internally issued to the device. the addi tive latency value must be chosen to assure trcd (min.) is satisfied. additive latencies of 0, 1, 2, 3 and 4 are supported. once a bank has been activated it must be precharged before another bank activate command can be applied to the same bank. the bank active and precharge times are defined as tras and trp, respectively. the minimum time interval between successive bank activate commands to the same bank is determined by t he /ras cycle time of the device (trc), which is equal to tras + trp. the minimum time interv al between successive bank activate commands to the different bank is determined by (trrd). /ck ck address command t0 t1 t2 t3 tn tn+1 tn+2 tn+3 trcd(min.) tras trp trc row: 0 act bank0 active bank1 active bank0 active bank0 precharge bank1 precharge posted read posted read act pre pre act col: 0 row: 0 row: 1 col: 1 trcd =1 tccd additive latency (al) trrd bank0 read begins bank activate command cycle (trcd = 3, al = 2, trp = 3, trrd = 2, tccd = 2)
ede5116afse data sheet e0705e20 (ver. 2.0) 38 read and write access modes after a bank has been activated, a read or write cycle can be executed. this is accomplished by setting /ras high, /cs and /cas low at the clock?s rising edge. /we must also be defined at this time to determine whether the access cycle is a read operation (/we high) or a write operation (/we low). the ddr2 sdram provides a fast column access operation. a single read or write command will initiate a serial read or write operation on successive clock cycles. the boundar y of the burst cycle is strict ly restricted to specific segments of the page length. for example, the 32m bits 4 i/o 4 banks chip has a page length of 2048 bits (defined by ca0 to ca9, ca11). t he page length of 2048 is divided into 512 uniquely addressable boundary segments (4 bits each). a 4 bits bur st operation will occur entirely within one of the 512 groups beginning with the column address supplied to the device during the read or write command (ca0 to ca9, ca11). the second, third and fourth access will also occur within this group segment, however, the burst order is a function of the starting address, and the burst sequence. a new burst access must not interrupt the previous 4-bit burst operation. the minimum /cas to /cas delay is defined by tccd, and is a minimum of 2 clocks for read or write cycles. posted /cas posted /cas operation is supported to make command and data bus efficient for sustainable bandwidths in ddr2 sdram. in this operation, the ddr2 sdram allows a /cas read or write command to be issued immediately after the /ras bank activate command (or any time during the /ras-/cas-delay time, trcd, period). the command is held for the time of the additive laten cy (al) before it is issued inside t he device. the read latency (rl) is controlled by the sum of al and the /cas latency (cl). t herefore if a user chooses to issue a r/w command before the trcd (min), then al (greater than 0) must be written into the emrs. the write latency (wl) is always defined as rl ? 1 (read latency ? 1) where read latency is defined as the sum of additive latency plus /cas latency (rl = al + cl). -1 /ck ck dqs, /dqs al = 2 > trcd > trac cl = 3 command dq 0123456789101112 act read nop nop writ out0 out1 out2 out3 in0 in1 in2 in3 = = wl = rl n?1 = 4 rl = al + cl = 5 read followed by a write to the same bank [al = 2 and cl = 3, rl = (al + cl) = 5, wl = (rl - 1) = 4] -10123456789101112 /ck dqs, /dqs al = 0 > trcd > trac cl = 3 command dq act read writ out0 out1 out2 out3 in0 in1 in2 in3 ck = = rl = al + cl = 3 wl = rl n?1 = 2 nop nop nop read followed by a write to the same bank [al = 0 and cl = 3, rl = (al + cl) = 3, wl = (rl - 1) = 2]
ede5116afse data sheet e0705e20 (ver. 2.0) 39 burst mode operation burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from memory locations (read cycle). the parameters that define how th e burst mode will operate are burst sequence and burst length. ddr2 sdram supports 4 bits burst and 8bits burs t modes only. for 8 bits burst mode, full interleave address ordering is supported, however, sequential address ordering is nibble based for ease of implementation. the burst type, either sequential or in terleaved, is programmable and defined by the address bit 3 (a3) of the mrs, which is similar to the ddr-i sdram operation. seam less burst read or write oper ations are supported. unlike ddr-i devices, interruption of a burst read or writes o peration is limited to ready by read or write by write at the boundary of burst 4. therefore the burst stop command is not supported on ddr2 sdram devices. [burst length and sequence] burst length starting address (a2, a1, a0) sequential addressing (decimal) interl eave addressing (decimal) 000 0, 1, 2, 3 0, 1, 2, 3 001 1, 2, 3, 0 1, 0, 3, 2 010 2, 3, 0, 1 2, 3, 0, 1 4 011 3, 0, 1, 2 3, 2, 1, 0 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 8 111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 note: page length is a function of i/o organization and column addressing 8m bits 16 organization (ca0 to ca9); page length = 1024 bits
ede5116afse data sheet e0705e20 (ver. 2.0) 40 burst read command [read] the burst read command is initiated by having /cs and /cas low while holding /ras and /we high at the rising edge of the clock. the address inputs determine the starting column address for the burst. the delay from the start of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency (rl). the data strobe output (dqs) is driven low 1 clock cy cle before valid data (dq) is driven onto the data bus. the first bit of the burst is synchronized with the risi ng edge of the data strobe (dqs). each subsequent data-out appears on the dq pin in phase with the dqs signal in a source synchronous manner. the rl is equal to an additive latency (al) plus /cas late ncy (cl). the cl is defined by the mode register set (mrs), similar to the existing sdr and ddr-i sdrams. the al is defined by the extended mode register set (emrs). read nop /ck ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq out0 out1 out2 out3 < tdqsck = cl = 3 rl = 3 burst read operation (rl = 3, bl = 4 (al = 0 and cl = 3)) read nop /ck ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq out0 out1 out2 out3 out4 out5 out6 out7 < tdqsck = cl = 3 rl = 3 burst read operation (rl = 3, bl = 8 (al = 0 and cl = 3))
ede5116afse data sheet e0705e20 (ver. 2.0) 41 posted read nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq al = 2 cl = 3 rl = 5 out0 out1 out2 out3 = < tdqsck burst read operation (rl = 5, bl = 4 (al = 2, cl = 3)) posted read nop ck /ck t0 t1 t3 t4 t5 t6 t7 t8 t9 command dqs, /dqs dq nop posted writ rl = 5 out0 out1 out2 out3 in0 in2 nop in3 in1 trtw (read to write = 4 clocks) wl = rl - 1 = 4 burst read followed by burst write (rl = 5, wl = rl-1 = 4, bl = 4) the minimum time from the burst read command to the burst write command is defi ned by a read-to-write-turn- around-time, which is 4 clocks. posted read nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq posted read nop out a0 al = 2 ab cl = 3 rl = 5 out a1 out a2 out a3 out b0 out b1 out b2 seamless burst read operation (rl = 5, al = 2, and cl = 3)
ede5116afse data sheet e0705e20 (ver. 2.0) 42 enabling a read command at every other clock supports t he seamless burst read operat ion. this operation is allowed regardless of same or different banks as long as the banks are activated. read nop read ck /ck t0 t2 t4 t6 t8 t10 t1 t3 t5 t7 t9 t11 command dqs, /dqs dq nop rl = 4 burst interrupt is only allowed at this timing. out a0 out a1 out a2 out a3 out b0 out b1 out b2 out b3 out b4 out b5 out b6 out b7 a b burst read interrupt by read notes :1. read burst interrupt function is only allowed on burst of 8. burst interrupt of 4 is prohibited. 2. read burst of 8 can only be in terrupted by another read command. read burst interruption by write command or precharge command is prohibited. 3. read burst interrupt must occur exactly two clo cks after previous read command. any other read burst interrupt timings are prohibited. 4. read burst interruption is allowed to any bank inside dram. 5. read burst with auto precharge enabled is not allowed to interrupt. 6. read burst interruption is allowed by another read with auto precharge command. 7. all command timings are referenced to burst length set in the mode register. they are not referenced to actual burst. for example, minimum read to prechar ge timing is al + bl/2 where bl is the burst length set in the mode register and not the actual burst (which is shorter because of interrupt).
ede5116afse data sheet e0705e20 (ver. 2.0) 43 burst write command [writ] the burst write command is initiated by having /cs, /cas and /we low while holding /ras high at the rising edge of the clock. the address inputs determine the starting column address. write latency (w l) is defined by a read latency (rl) minus one and is equal to (al + cl ? 1). a data strobe signal (dqs) should be driven low (preamble) one clock prior to the wl. the first data bit of the burst c ycle must be applied to the dq pins at the first rising edge of the dqs following the preamble. t he tdqss specification must be satisfied for write cycles. the subsequent burst bit data are issued on successive edges of the dqs until the burst length of 4 is completed. when the burst has finished, any additional data supplied to the dq pins will be ignored. the dq signal is ignored after the burst write operation is complete. the time from the completion of the burst write to bank prec harge is the write recovery time (twr). writ nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t9 command dqs, /dqs dq > trp > twr in2 pre nop act in1 in3 in0 = = = completion of the burst write < tdqss wl = rl ?1 = 2 burst write operation (rl = 3, wl = 2, bl = 4 twr = 2 (al=0, cl=3)) writ nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq > trp > twr in2 in1 in3 in0 in6 in5 in7 in4 = = = completion of the burst write < tdqss wl = rl ?1 = 2 t9 t11 nop act pre burst write operation (rl = 3, wl = 2, bl = 8 (al=0, cl=3))
ede5116afse data sheet e0705e20 (ver. 2.0) 44 posted writ nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t9 command dqs, /dqs dq wl = rl ? 1 = 4 > twr in0 in1 in2 in3 pre = = < tdqss completion of the burst write burst write operation (rl = 5, wl = 4, bl = 4 twr = 3 (al=2, cl=3)) nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 command dqs, /dqs dq cl = 3 rl = 5 al = 2 > twtr in0 in2 nop in1 in3 posted read = wl = rl ?1 = 4 write to read = cl - 1 + bl/2 + twtr (2) = 6 out0 out1 burst write followed by burst read (rl = 5, bl = 4, wl = 4, twtr = 2 (al=2, cl=3)) the minimum number of clock from the burst write command to the burst read command is cl - 1 + bl/2 + a write to-read-turn-around-time (twtr). this twtr is not a write recovery time (twr) but the ti me required to transfer the 4bit write data from the input buffer into sense amplifiers in the array. nop /ck ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq in a0 in a2 nop in a1 in a3 in b0 in b2 in b1 in b3 posted writ posted writ wl = rl ? 1 = 4 ab seamless burst write operation (rl = 5, wl = 4, bl = 4) enabling a write command every other clock supports the seam less burst write operation. this operation is allowed regardless of same or different banks as long as the banks are activated.
ede5116afse data sheet e0705e20 (ver. 2.0) 45 writ nop writ ck /ck t0 t2 t4 t6 t8 t10 t1 t3 t5 t7 t9 t11 command dqs, /dqs dq nop wl = 3 burst interrupt is only allowed at this timing. in a0 in a1 in a2 in a3 in b0 in b1 in b2 in b3 in b4 in b5 in b6 in b7 a b write interrupt by write (wl = 3, bl = 8) notes :1. write burst interrupt function is only allowed on burst of 8. burst interrupt of 4 is prohibited. 2. write burst of 8 can only be interrupted by another write command. write burst interruption by read command or precharge command is prohibited. 3. write burst interrupt must occur exactly two clo cks after previous write command. any other write burst interrupt timings are prohibited. 4. write burst interruption is allowed to any bank inside dram. 5. write burst with auto precharge enabled is not allowed to interrupt. 6. write burst interruption is allowed by another write with auto precharge command. 7. all command timings are referenced to burst length set in the mode register. they are not referenced to actual burst. for example, minimum write to prec harge timing is wl+bl/2+twr where twr starts with the rising clock after the un-interrupted burst end and not from the end of actual burst end.
ede5116afse data sheet e0705e20 (ver. 2.0) 46 write data mask one write data mask (dm) pin for each 8 data bits (dq) wi ll be supported on ddr2 sdrams, consistent with the implementation on ddr-i sdrams. it has identical timings on wr ite operations as the data bits, and though used in a uni-directional manner, is internally loaded identically to data bits to insure matched system timing. dm is not used during read cycles. dq dqs /dqs t1 t2 t3 t4 t5 t6 dm write mask latency = 0 in in in in in in in in data mask timing /ck ck dqs, /dqs dq dm dqs, /dqs dq dm command [tdqss(min.)] twr tdqss wl tdqss wl [tdqss(max.)] writ nop in0 in2 in3 in0 in2 in3 data mask function, wl = 3, al = 0 shown
ede5116afse data sheet e0705e20 (ver. 2.0) 47 precharge command [pre] the precharge command is used to prec harge or close a bank that has been ac tivated. the precharge command is triggered when /cs, /ras and /we are low and /cas is hi gh at the rising edge of the clock. the precharge command can be used to precharge each bank independently or all banks simultaneously. three address bits a10, ba0 and ba1 are used to define which bank to precharge when the command is issued. [bank selection for precharge by address bits] a10 ba0 ba1 precharged bank(s) l l l bank 0 only l h l bank 1 only l l h bank 2 only l h h bank 3 only h all banks 0 to 3 remark: h: vih, l: vil, : vih or vil burst read operation followed by precharge minimum read to precharge command spacing to the same bank = al + bl/2 clocks for the earliest possible precharge, the precharge command may be issued on the rising edge that is ?additive latency (al) + bl/2 clocks? after a read command. a new bank active (command) may be issued to the same bank after the ras precharge time (trp). a pr echarge command cannot be issued until tras is satisfied. nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq al + 2 clocks rl = 4 al = 1 cl = 3 cl = 3 out0 out2 pre nop out1 out3 posted read act nop > t rp = = > t ras burst read operation followed by precharge (rl = 4, bl = 4 (al=1, cl=3)) nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq rl = 5 al = 2 > t ras cl = 3 cl = 3 out0 out2 nop pre out1 out3 posted read act nop > t rp = = al + 2 clocks burst read operation followed by precharge (rl = 5, bl = 4 (al=2, cl=3))
ede5116afse data sheet e0705e20 (ver. 2.0) 48 nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 command dqs, /dqs dq al = 2 cl = 4 out0 out2 nop pre out1 out3 out4 out6 out5 out7 posted read act nop > t rp = = rl = 6 al + bl/2 clocks > t ras(min.) burst read operation followed by precharge (rl = 6 (al=2, cl=4, bl=8))
ede5116afse data sheet e0705e20 (ver. 2.0) 49 burst write followed by precharge minimum write to precharge command spacing to the same bank = wl + bl/2 clocks + twr for write cycles, a delay must be satisfied from the comple tion of the last burst write cycle until the precharge command can be issued. this delay is known as a write reco very time (twr) referenced from the completion of the burst write to the precharge command. no precharge command should be issued prior to the twr delay, as ddr2 sdram allows the burst interrupt operation only read by read or write by write at the boundary of burst 4. in3 in1 nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq > twr completion of the burst write wl = 3 in0 in2 posted writ pre = burst write followed by precharge (wl = (rl-1) =3) posted writ ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t9 command dqs, /dqs dq wl = 4 in0 in1 in2 in3 pre > twr completion of the burst write = nop burst write followed by precharge (wl = (rl-1) = 4) posted writ nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t11 command dqs, /dqs dq wl = 4 in0 in1 in2 in3 in4 in5 in6 in7 > twr completion of the burst write = pre burst write followed by precharge (wl = (rl-1) = 4,bl= 8)
ede5116afse data sheet e0705e20 (ver. 2.0) 50 auto precharge operation before a new row in an active bank can be opened, the ac tive bank must be precharged using either the precharge command or the auto-precharge function. when a read or a write command is given to the ddr2 sdram, the /cas timing accepts one extra address, column address a10, to a llow the active bank to automat ically begin precharge at the earliest possible moment during the bu rst read or write cycle. if a10 is low when the read or write command is issued, then normal read or write burst operation is execut ed and the bank remains active at the completion of the burst sequence. if a10 is high when the read or write command is issued, then the auto-prec harge function is engaged. during auto-precharge, a r ead command will execute as normal with the exception that the active bank will begin to precharge on the rising edge which is /cas late ncy (cl) clock cycles before the end of the read burst. auto-precharge can also be implemented during write commands. the precharge operation engaged by the auto precharge command will not begin until the la st data of the burst wr ite sequence is properly stored in the memory array. this feature allows the prec harge operation to be partially or completely hidden during burst read cycles (dependent upon /cas latency) thus improving system performance for random data access. the /ras lockout circuit internally delays the precharge operation until the array restore ope ration has been completed so that the auto precharge command may be issued with any read or write command. burst read with auto precharge [reada] if a10 is high when a read command is issued, the read with auto-precharge function is engaged. the ddr2 sdram starts an auto precharge operation on the rising edge wh ich is (al + bl/2) cycles later from the read with ap command when tras (min) is satisfied. if tras (min.) is not satisfied at the edge, the start poi nt of auto- precharge operation will be delayed until tras (min.) is sati sfied. a new bank active (command) may be issued to the same bank if the following two conditions are satisfied simultaneously. (1) the /ras precharge time (trp) has been satisfied from the clock at which the auto precharge begins. (2) the /ras cycle time (trc) from the prev ious bank activation has been satisfied. nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq rl = 5 al = 2 > trc cl = 3 auto precharge begins cl = 3 out0 out2 out1 out3 posted read act > trp = = = > tras(min.) a10 = 1 burst read with auto precharge followed by an activation to the same bank (trc limit) (rl = 5, bl = 4 (al = 2, cl = 3, internal trcd = 3))
ede5116afse data sheet e0705e20 (ver. 2.0) 51 nop ck /ck t0 t-1 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq rl = 5 al = 2 > trc cl = 3 auto precharge begins cl = 3 out0 out2 out1 out3 posted read act > trp = = = > tras(min.) a10 = 1 burst read with auto precharge followed by an activation to the same bank (tras lockout case) (rl = 5, bl = 4 (al = 2, cl = 3, internal trcd = 3)) nop ck /ck t0 t1 t2 t3 t4 t5 t6 t7 t8 command dqs, /dqs dq rl = 5 al = 2 a10 = 1 > trc cl = 3 cl = 3 auto precharge begins out0 out2 out1 out3 posted read act nop > trp = = = > tras(min.) burst read with auto precharge followed by an activation to the same bank (trp limit) (rl = 5, bl = 4 (al = 2, cl = 3, internal trcd = 3) read act ck /ck t0 t2 t4 t6 t8 t10 t1 t3 t5 t7 t9 t11 command dqs, /dqs dq nop rl = 5 al = 2 a10 = 1 cl = 3 trp auto precharge begins out0 out1 out2 out3 out4 out5 out6 out7 trc tras (min.) burst read with auto precharge followe d by an activation to the same bank (rl = 5, bl = 8 (al = 2, cl = 3)
ede5116afse data sheet e0705e20 (ver. 2.0) 52 burst write with auto precharge [writa] if a10 is high when a write command is issued, the write with auto-precharge function is engaged. the ddr2 sdram automatically begins precharge operation after the co mpletion of the burst writes plus write recovery time (twr). the bank undergoing auto-prec harge from the completion of the writ e burst may be reactivated if the following two conditions are satisfied. (1) the data-in to bank activate delay time (twr + trp) has been satisfied. (2) the /ras cycle time (trc) from the prev ious bank activation has been satisfied. in1 in3 /ck ck t0 t1 t2 t3 t4 t5 t6 t7 t12 command dqs, /dqs dq > twr > trc auto precharge begins completion of the burst write in0 in2 posted writ act nop > trp = = = wl = rl ?1 = 2 a10 = 1 burst write with auto-precharge (t rc limit) (wl = 2, twr =2, trp=3) nop ck /ck t0 t3 t4 t5 t6 t7 t8 t9 t10 command dqs, /dqs dq > twr > trc auto precharge begins completion of the burst write in0 in2 nop in1 in3 posted writ act > trp = = = wl = rl ?1 = 4 a10 = 1 burst write with auto-precharge (tw r + trp) (wl = 4, twr =2, trp=3)
ede5116afse data sheet e0705e20 (ver. 2.0) 53 writ act ck /ck t0 t2 t4 t6 t8 t10 t3 t5 t7 t9 t11 t12 t13 command dqs, /dqs dq nop wl = rl ? 1 = 4 a10 = 1 twr trp auto precharge begins. in0 in1 in2 in3 in4 in5 in6 in7 trc burst write with auto precharge followed by an activation to the same bank (wl = 4, bl = 8, twr = 2, trp = 3)
ede5116afse data sheet e0705e20 (ver. 2.0) 54 refresh requirements ddr2 sdram requires a refresh of all rows in any rolli ng 64ms interval. each refresh is generated in one of two ways : by an explicit automatic refresh co mmand, or by an internally timed event in self-refresh mode. dividing the number of device rows into the rolling 64 ms interval defines the average refresh interval, trefi, which is a guideline to controllers for distributed refresh timing. automatic refresh command [ref] when /cs, /ras and /cas are held low and /we high at the risi ng edge of the clock, the chip enters the automatic refresh mode (ref). all banks of t he ddr2 sdram must be precharged and idle for a minimum of the precharge time (trp) before the auto refresh command (ref) can be appl ied. an address counter, internal to the device, supplies the bank address during the refresh cycle. no control of the external address bus is required once this cycle has started. when the refresh cycle has completed, all banks of the ddr2 sdram will be in the precharg ed (idle) state. a delay between the auto refresh command (ref) and the next ac tivate command or subsequent auto refresh command must be greater than or equal to t he auto refresh cycle time (trfc). to allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. a maximum of 8 refresh commands can be posted to any given ddr2 sdram, meaning that the maximum absolute interval between any refr esh command and the next refresh command is 9 trefi. nop pre ck /ck t0 t1 t2 t3 t15 t7 t8 cke command trp vih trfc trfc ref ref nop any command automatic refresh command
ede5116afse data sheet e0705e20 (ver. 2.0) 55 self refresh command [self] the ddr2 sdram device has a built-in timer to accommodate self-refresh operation. the self-refresh command is defined by having /cs, /ras, /cas and cke held low wi th /we high at the rising edge of the clock. odt must be turned off before issuing self refresh comm and, by either driving odt pin low or using emrs command. once the command is registered, cke must be held low to keep the device in self-refresh mode. when the ddr2 sdram has entered self re fresh mode all of the external sign als except cke, are ?don?t care?. the clock is internally disabled during self-refresh operation to save power. the user may change the external clock frequency or halt the external clock one clock after self-r efresh entry is registered, however, the clock must be restarted and stable before the device can exit self refresh operation. once se lf-refresh exit command is registered, a delay equal or longer than the txsnr or txsrd must be satisfied before a valid command can be issued to the device. cke must remain high for the entire self-refresh exit period txsrd fo r proper operation. nop or deselect commands must be registered on each positive clock edge durin g the self-refresh exit interval. odt should also be turned off during txsrd. notes: 1. device must be in the ?all banks idle? state prior to entering self refresh mode. 2. odt must be turned off taofd before entering self refresh mode, and can be turned on again when txsrd timing is satisfied. 3. txsrd is applied for a read or a read with autoprecharge command. 4. txsnr is applied for any command except a read or a read with autoprecharge command. comand ck t0 t2 t1 tm tn cke t3 t4 t5 odt t6 taofd /ck txsnr txsrd trp* tck tch tcl tis tis tis tis tih valid nop nop self nop self refresh command
ede5116afse data sheet e0705e20 (ver. 2.0) 56 power-down [pden] power-down is synchronously entered when cke is regist ered low (along with nop or deselect command). cke is not allowed to go low while mode register or extended mode register command time, or read or write operation is in progress. cke is allowed to go low while any of other operations such as row activation, precharge or auto- precharge, or auto-refresh is in pr ogress, but power-down idd spec w ill not be applied until finishing those operations. timing diagrams are shown in the following pages with details for entry into power down. the dll should be in a locked state when power-down is entered. otherwise dll should be reset after exiting power-down mode for proper read operation. if power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. entering power-down deactivates the input and output buffers, excluding ck, /ck, odt and cke. also the dll is disabled upon entering precharge power-down or slow exit active power-down, but the dll is kept enabled during fast exit active power- down. in power-down mode, cke low and a stable clo ck signal must be maintained at the inputs of the ddr2 sdram, and odt should be in a valid state but all other input signals ar e ?don?t care?. cke low must be maintained until tcke has been satisfied. power-down duration is limited by 9 times trefi of the device. the power-down state is synchronously exited when c ke is registered high (along with a nop or deselect command). cke high must be maintained until tcke has been satisfied. a valid, executable command can be applied with power-down exit latency, txp, txard, or tx ards, after cke goes high. power-down exit latency is defined at ac characteristics table of this data sheet. ck /ck cke command vih or vil txp, txard, txards enter power-down mode tcke tcke exit power-down mode tcke tih tis tih tis tih tis tih tih tis valid valid valid nop nop valid power down read to power-down entry ck command cke dq dqs command cke dq dqs /ck al + cl al + cl bl=4 bl=8 t0 tx tx+2 tx+3 tx+4 tx+5 tx+6 t1 t2 tx+1 tx+7 tx+8 tx+9 /dqs /dqs read out 0 out 1 out 2 out 3 out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7 vih vih cke should be kept high until the end of burst operation. cke should be kept high until the end of burst operation. read operation starts with a read command and t0 tx tx+2 tx+3 tx+4 tx+5 tx+6 t1 t2 tx+1 tx+7 tx+8 tx+9 read
ede5116afse data sheet e0705e20 (ver. 2.0) 57 read with auto precharge to power-down entry ck command cke dq dqs command cke dq dqs al + bl/2 with trtp = 7.5ns and tras min. satisfied /ck start internal precharge al + cl cke should be kept high until the end of burst operation. cke should be kept high until the end of burst operation. al + cl bl=4 bl=8 t0 tx tx+2 tx+3 tx+4 tx+5 tx+6 t1 t2 tx+1 tx+7 tx+8 tx+9 /dqs /dqs read pre read out 0 out 1 out 2 out 3 out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7 al + bl/2 with trtp = 7.5ns and tras min. satisfied pre t0 tx tx+2 tx+3 tx+4 tx+5 tx+6 t1 t2 tx+1 tx+7 tx+8 tx+9 write to power-down entry ck command cke dqs command cke dq dqs /ck wl bl=4 bl=8 /dqs /dqs twtr wl twtr dq in 0 in 1 in 2 in 3 t0 tm+1 tm+3 tx tx+1 tx+2 ty t1 tm tm+2 ty+1 ty+2 ty+3 writ writ in 0 in 1 in 2 in 3 in 4 in 5 in 6 in 7 t0 tm+1 tm+3 tm+4 tm+5 tx tx+1 t1 tm tm+2 tx+2 tx+3 tx+4
ede5116afse data sheet e0705e20 (ver. 2.0) 58 write with auto precharge to power-down entry ck /ck wl wr*1 wr*1 ck command cke dq dqs command cke dq dqs /ck bl=4 bl=8 /dqs /dqs writa pre writa in 0 in 1 in 2 in 3 pre wl t0 tm+1 tm+3 tx tx+1 tx+2 tx+3 t1 tm tm+2 tx+4 tx+5 tx+6 note: 1. wr is programmed through mrs t0 tm+1 tm+3 tm+4 tm+5 tx tx+1 t1 tm tm+2 tx+2 tx+3 tx+4 in 0 in 1 in 2 in 3 in 4 in 5 in 6 in 7
ede5116afse data sheet e0705e20 (ver. 2.0) 59 refresh command to power-down entry command cke t0 t3 t5 t6 t7 t8 t9 t1 t2 t4 t10 ck /ck cke can go to low one clock after an auto-refresh command t11 ref active command to power down entry command cke cke can go to low one clock after an active command act precharge/precharge all command to power down entry command cke cke can go to low one clock after a precharge or precharge all command pre or pall mrs/emrs command to power down entry command cke mrs or emrs tmrd
ede5116afse data sheet e0705e20 (ver. 2.0) 60 asynchronous cke low event dram requires cke to be maintained high for all valid operations as defined in this data sheet. if cke asynchronously drops low during any valid operation dram is not guaranteed to preserve t he contents of array. if this event occurs, memory controller must satisfy dram timing specification tdelay before turning off the clocks. stable clocks must exist at the input of dram before cke is raised high again. dram must be fully re-initialized (steps 4 through 13) as described in initialization s equence. dram is ready for normal operation after the initialization sequence. see ac charac teristics table for tdelay specification tck ck /ck tdelay cke cke asynchronously drops low clocks can be turned off after this point stable clocks
ede5116afse data sheet e0705e20 (ver. 2.0) 61 input clock frequency change during precharge power down ddr2 sdram input clock frequency can be changed under following condition: ddr2 sdram is in precharged power down mode. odt mu st be turned off and cke must be at logic low level. a minimum of 2 clocks must be waited after cke goes lo w before clock frequency may change. sdram input clock frequency is allowed to change only within minimum and maximum operating frequency specified for the particular speed grade. during input clock frequency change, odt and cke must be held at stable low levels. once input clock frequency is changed, stable new clocks must be provided to dram before precharge power down may be exited and dll must be reset via emrs after precharge power down exit. depending on new clock frequency an additional mrs command may need to be issued to appropriately set the wr, cl and soon. during dll relock period, odt must remain off. after the dll lock time, the dram is ready to operate with new clock frequency. clock frequency change in precharge power down mode ck cke t0 t4 tx+1 ty ty+1 ty+2 t1 t2 tx /ck ty+3 tz trp txp taofd stable new clock before power down exit odt is off during dll reset minmum 2 clocks required before changing frequency odt command ty+4 nop nop nop nop dll reset nop valid 200 clocks frequency change occurs here burst interruption interruption of a burst read or write cycle is prohibited. no operation command [nop] the no operation command should be used in cases when the ddr2 sdram is in an idle or a wait state. the purpose of the no operation command is to prevent the ddr2 sdram from registering any unwanted commands between operations. a no operation command is registered when /cs is low with /ras, /cas, and /we held high at the rising edge of the clock. a no oper ation command will not terminate a previous operation that is still executing, such as a burst read or write cycle. deselect command [desl] the deselect command performs the same function as a no operation command. deselect command occurs when /cs is brought high at the rising edge of the clock, the /ras, /cas, and /we signals become don?t cares.
ede5116afse data sheet e0705e20 (ver. 2.0) 62 package drawing 84-ball fbga ( bga) solder ball: lead free (sn-ag-cu) 84- 0.45 0.05 11.0 0.1 index mark 13.0 0.1 0.1 s 0.2 s 1.12 max. 0.35 0.05 s b a index mark 0.8 6.4 unit: mm 0.2 s b 0.12 m sab eca-ts2-0138-02 0.2 sa 0.8 1.6 11.2
ede5116afse data sheet e0705e20 (ver. 2.0) 63 recommended soldering conditions please consult with our sales offices for soldering conditions of the ede5116afse. type of surface mount device ede5116afse: 84-ball fbga ( bga) < lead free (sn-ag-cu) >
ede5116afse data sheet e0705e20 (ver. 2.0) 64 notes for cmos devices 1 precaution against esd for mos devices exposing the mos devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the mos devices operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. environmental control must be adequate. when it is dry, humidifier should be used. it is recommended to avoid using insulators that easily build static electricity. mos devices must be stored and transported in an anti-static container, static shielding bag or conductive material. all test and measurement tools including work bench and floor should be grounded. the operator should be grounded using wrist strap. mos devices must not be touched with bare hands. similar precautions need to be taken for pw boards with semiconductor mos devices on it. 2 handling of unused input pins for cmos devices no connection for cmos devices input pins can be a cause of malfunction. if no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. cmos devices behave differently than bipolar or nmos devices. input levels of cmos devices must be fixed high or low by using a pull-up or pull-down circuitry. each unused pin should be connected to v dd or gnd with a resistor, if it is considered to have a possibility of being an output pin. the unused pins must be handled in accordance with the related specifications. 3 status before initialization of mos devices power-on does not necessarily define initial status of mos devices. production process of mos does not define the initial operation status of the device. immediately after the power source is turned on, the mos devices with reset function have not yet been initialized. hence, power-on does not guarantee output pin levels, i/o settings or contents of registers. mos devices are not initialized until the reset signal is received. reset operation must be executed immediately after power-on for mos devices having reset function. cme0107
ede5116afse data sheet e0705e20 (ver. 2.0) 65 bga is a registered trademark of tessera, inc. all other trademarks are the intellectual property of their respective owners. m01e0107 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of elpida memory, inc. elpida memory, inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of elpida memory, inc. or third parties by or arising from the use of the products or information listed in this document. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of elpida memory, inc. or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. elpida memory, inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [product applications] elpida memory, inc. makes every attempt to ensure that its products are of high quality and reliability. however, users are instructed to contact elpida memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [product usage] design your application so that the product is used within the ranges and conditions guaranteed by elpida memory, inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. elpida memory, inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating elpida memory, inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the elpida memory, inc. product. [usage environment] this product is not designed to be resistant to electromagnetic waves or radiation. this product must be used in a non-condensing environment. if you export the products or technology described in this document that are controlled by the foreign exchange and foreign trade law of japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of japan. also, if you export products/technology controlled by u.s. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. if these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. the information in this document is subject to change without notice. before using this document, confirm that this is the late st version.

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