st3407 st3407 st3407 st3407 p channel enhancement mode mosfet -3.6a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3407 200 6 . v1 description description description description st3407 is the p-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer pow er management, other battery powered circuits, and low in-line power loss are required. the product is in a very small outline surface mount package. pin pin pin pin configuration configuration configuration configuration sot-23-3l sot-23-3l sot-23-3l sot-23-3l 1.gate 2.source 3.drain part part part part marking marking marking marking sot-23-3l sot-23-3l sot-23-3l sot-23-3l y: year code a: process code ordering ordering ordering ordering information information information information process code : a ~ z ; a ~ z s t3407s23 r g s 23: sot-23-3l ; r : tape reel ; g : pb C free part part part part number number number number package package package package part part part part marking marking marking marking s t3407s23rg sot-23-3l a7 y a feature feature feature feature ? -30v/-4 .0 a, r ds(on) = 60m @v gs = -10v ? -30v/-3.2a, r ds(on) = 80m @v gs = -4.5v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design 3 3 3 3 1 1 1 1 2 2 2 2 d d d d g g g g s s s s 3 3 3 3 1 1 1 1 2 2 2 2 a7ya a7ya a7ya a7ya
st3407 st3407 st3407 st3407 p channel enhancement mode mosfet -3.6a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3407 200 6 . v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain currenttj=150 ) t a =25 t a =70 i d -3.6 -3.0 a pulsed drain current i dm -15 a continuous source current (diode conduction) i s -1.0 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 120 /w
st3407 st3407 st3407 st3407 p channel enhancement mode mosfet -3.6a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3407 200 6 . v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250 u a -30 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -1.0 -3.0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =-24v,v gs =0v -1 u a v ds =-24v,v gs =0v t j =55 -9.5 on-state drain current i d(on) v ds Q - 5 v,v gs =-10v -10 a drain-source on-resistance r ds(on) v gs =-10.0v,i d =-4.0a v gs =-4.5v,i d =-3.2a 45 60 60 80 m forward transconductance g fs v ds =-5.0v,i d =-4.0a 10 s diode forward voltage v sd i s =-1.0a,v gs =0v -0.8 -1.2 v dynamic dynamic dynamic dynamic total gate charge q g v ds =-15v v gs =-10v i d -4.0a 14 21 nc gate-source charge q gs 1.9 gate-drain charge q gd 3.7 input capacitance c iss v ds =-15v v gs =0v f=1mh z 540 pf output capacitance c oss 131 reverse transfer capacitance c rss 105 turn-on time t d(on) tr v dd =-15v r l =15 i d =-1.0a v gen =-10v r g =6 10 16 ns 16 25 turn-off time t d(off) tf 32 50 21 32
st3407 st3407 st3407 st3407 p channel enhancement mode mosfet -3.6a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3407 200 6 . v1 typical typical typical typical characterictics characterictics characterictics characterictics (25 unless otherwise noted)
st3407 st3407 st3407 st3407 p channel enhancement mode mosfet -3.6a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3407 200 6 . v1 typical typical typical typical characterictics characterictics characterictics characterictics (25 unless otherwise noted)
st3407 st3407 st3407 st3407 p channel enhancement mode mosfet -3.6a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3407 200 6 . v1 sot-23-3l sot-23-3l sot-23-3l sot-23-3l package package package package outline outline outline outline
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