1/5 STPS80L15CY preliminary datasheet ? july 2003 - ed: 5b low drop or-ing power schottky rectifier i f(av) 2x40a v rrm 15 v tj (max) 125 c v f (max) 0.33 v main product characteristics n max247 package, dual diode construction, 2 x 40a n 15v blocking voltage suitable for 5v and 12v or-ing n extremely low voltage voltage drop: 0.33v @ 100c n operating junction temperature: 125c n avalanche capability specified features and benefits the STPS80L15CY uses proprietary barrier technology to optimize forward voltage drop for or-ing functions in n-1 fault tolerant switch mode power supplies. description max247 a1 k a2 symbol parameter value unit v rrm repetitive peak reverse voltage 15 v i f(rms) rms forward current 50 a i f(av) average forward current tc = 110c d = 0.5 per diode per device 40 80 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 400 a i rrm repetitive peak reverse current t p=2sf= 1khz square 2 a p arm repetitive peak avalanche power tp = 1s tj = 25c 36045 w t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature 125 c dv/dt critical rate of rise of reverse voltage 10000 v/s absolute ratings (limiting values, per diode) a1 a2 k
STPS80L15CY 2/5 symbol parameter value unit r th (j-c) junction to case per diode 0.7 c/w total 0.5 r th (c) coupling 0.3 thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25 cv r =5v 4 ma tj = 100 c 280 400 tj=25 cv r = 12v 11 tj = 100 c 0.44 1.1 a tj=25 cv r = 15v 16 ma tj = 100 c 0.53 1.3 a v f * forward voltage drop tj = 25 ci f = 40 a 0.42 v tj = 100 ci f = 40 a 0.30 0.33 tj=25 ci f = 80 a 0.55 tj = 100 ci f = 80 a 0.40 0.46 pulse test :* tp = 380 s, d <2% to evaluate the maximum conduction losses use the following equation : p=0.20xi f(av) + 0.0032 x i f 2 (rms) static electrical characteristics (per diode) when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c)
STPS80L15CY 3/5 0 5 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 12 14 16 18 20 22 pf(av)(w) d = 0.2 d = 0.5 d = 1 d = 0.05 d = 0.1 if(av) (a) t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 50 if(av)(a) rth(j-a)=5c/w rth(j-a)=rth(j-c) tamb(c) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d =0.5, per diode). 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm fig. 3: normalized avalanche power derating versus pulse duration. 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm fig. 4: normalized avalanche power derating versus junction temperature. 1e-3 1e-2 1e-1 1e+0 0 100 200 300 400 500 600 im(a) tc=75c tc=25c tc=50c t(s) i m t d =0.5 fig. 5: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 zth(j-c)/rth(j-c) d=0.1 d=0.2 d=0.5 single pulse tp(s) t d =tp/t tp fig. 6: relative variation of thermal impedance junction to case versus pulse (per diode).
STPS80L15CY 4/5 0123456789101112131415 1e-1 1e+0 1e+1 1e+2 1e+3 ir(ma) tj=25c tj=75c vr(v) tj=100c fig. 7: reverse leakage current versus reverse voltage applied (typical values, per diode). 12 51020 1 2 5 10 c(nf) f=1mhz tj=25c vr(v) fig. 8: junction capacitance versus reverse voltage applied (typical values, per diode). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 10 100 200 ifm(a) tj=100c (typical values) tj=25c (maximum values) tj=100c (maximum values) vfm(v) fig. 9: forward voltage drop versus forward current (per diode).
STPS80L15CY 5/5 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data max247 a e e l1 b1 b2 b l d c a1 ref. dimensions millimeters inches min. max. min. max. a 4.70 5.30 0.185 0.209 a1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 d 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 e 15.30 15.90 0.602 0.626 l 14.20 15.20 0.559 0.598 l1 3.70 4.30 0.146 0.169 ordering type marking package weight base qty delivery mode STPS80L15CY STPS80L15CY max247 4.4g 30 tube n cooling method: by conduction (c) n epoxy meets ul94,v0
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