savantic semiconductor product specification silicon pnp power transistors 2SB673 d escription with to-220c package darlington high dc current gain low collector saturation voltage complement to type 2sd633 applications high power switching applications hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i b base current -0.2 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB673 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma, i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-3a ,i b =-6ma -0.95 -1.5 v v cesat-2 collector-emitter saturation voltage i c =-7a ,i b =-14ma -1.3 -2.0 v v besat base-emitter saturation voltage i c =-3a ,i b =-6ma -1.55 -2.5 v i cbo collector cut-off current v cb =-100v, i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -4.0 ma h fe-1 dc current gain i c =-3a ; v ce =-3v 2000 15000 h fe-2 dc current gain i c =-7a ; v ce =-3v 1000 switching times t on turn-on time 0.8 s t stg storage time 2.0 s t f fall time i b1 =-i b2 =-6ma v cc =-45v,r l =15 a 2.5 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SB673 package outline fig.2 outline dimensions
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