qsi laser diode specifications for approval customer : model : QL85H6S-A/b/c signature of approval approved by checked by issued by approval by customer 315-9, cheonheung-ri, sungger-eup, cheonan-city, chungnam, korea 330-836 www. qsil aser.com
QL85H6S-A/b/c algaas laser diode quantum semiconductor international co., ltd. ver.3 apr.2005 ? overview ql85h6sa is a mocvd grown 850nm band algaas laser diode with quantum well structure. it's an attractive light source, with a typical light output power of 20mw for industrial optical module and sensor applications. ? application - sensor - industrial optical module ? features - visible light output : p = 850 nm - optical power output : 20mw cw - package type : to-18 (5.6mm ) - built-in photo diode for monitoring laser diode ? electrical connection a ld cathode, pd anode (fig. 1) b ld , pd anode (fig. 2) c ld anode, pd cathode (fig. 3) pin configuration bottom view fig. 1 ql85h6sa fig. 2 ql85h6sb fig. 3 ql85h6sc
? absolute maximum rating at tc=25 c items symbols values unit optical output power p 22 mw laser diode reverse voltage v 2 v photo diode reverse voltage v 30 v operating temperature topr ? 10 ~ + 60 c storage temperature tstg ? 40 ~ + 85 c ? electrical and optical characteristics at tc=25 c items symbols min. typ. max. unit condition optical output power po - 20 - mw - threshold current ith 5 20 35 ma - operating current iop 40 55 70 ma po=20mw slope efficiency se 0.4 0.5 0.9 mw/ma 10~20 mw operating voltage vop - 2.0 2.5 v po=20mw lasing wavelength p 845 855 865 nm po=20mw ?? 7 9 12 deg po=20mw beam divergence 25 32 40 deg po=20mw ? ?? - - 2 deg po=20mw beam angle ? - - 3 deg po=20mw monitor current im 0.1 0.6 1.0 ma po=20mw astigmatism as - - 15 m optical distance x, y, z - - 60 m the above product specifications are subject to change without notice. notice : QL85H6S-A/b/c to be operated on apc
example of representi tive characteristics optical power vs forward current 0 5 10 15 20 0 102030405060 forward current, if [ma] output power, p [mw] 25 30 40 50 60 wavelength vs temperature 840 850 860 870 880 890 20 30 40 50 60 temperature, tc [] wavelength, [?] far field pattern (po=10mw, tc=25) 0 0.2 0.4 0.6 0.8 1 -50 -40 -30 -20 -10 0 10 20 30 40 50 relative intensity angle [degree]
monitor current vs optical power 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 optical output power, po [mw] monitor current, im [ma] operating voltage vs temperature 1.6 1.65 1.7 1.75 1.8 1.85 1.9 20 30 40 50 60 temperature, tc [] operating voltage vop [v] threshold current vs temperature 1 10 100 25 30 35 40 45 50 55 60 temperature, tc [] threshold current ith [ma]
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