ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1416 - 200 200 watts - 50 volts, pulsed radar 1400 - 1600 mhz general description the 1416-200 is an internally matched, common base transistor capable of providing 200 watts of pulsed rf output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 mhz. this hermetically solder-sealed transistor is specifically designed for short pulse radar applications. it utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. case outline 55aw style 1 absolute maximum ratings maximum power dissipation @ 25 c 700 watts o maximum voltage and current bvces collector to emitter voltage 55 volts bvebo emitter to base voltage 4.0 volts ic collector current 15 amps maximum temperatures storage temperature - 65 to + 200 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power out power input power gain collector efficiency load mismatch tolerance f = 1400-1600 mhz vcc = 50 volts pulse width =1.0 m s duty = 10% f=1600mhz, po=200w 200 6.5 6.8 40 45 10:1 watts watts db % bvces bvebo bvcbo hfe q jc collector to emitter breakdown emitter to base breakdown emitter to base breakdown dc current gain thermal resistance ic = 10 ma ie = 10 ma ic = 10 ma vce = 5 v, ic = 1.0 a rated pulse condition 55 4.0 65 10 0.25 volts volts volts c/w o issue august 1996
1416-200 august 1996
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