12.0-16.0 ghz power amplifier qfn, 4x4mm 32 dbm saturated rf power 41 dbm output ip3 linearity 17 db gain control on-chip power detector 4x4mm standard qfn package 100% rf testing features absolute maximum ratings 1 supply voltage (vd1,2,3) supply current (id1,2,3) gate bias voltage (vg1,2,3) max power dissipation (pdiss) rf input power operating temperature (ta) storage temperature (tstg) channel temperature (tch) msl level (msl) esd min. - machine model (mm) esd min. - human body model (hbm) +8.0v 1500 ma -2.4v 5.5w +19 dbm -55 to +85 oc -65 to +150 oc 165 oc msl3 class a class 1a page 1 of 7 (1) minimum specifications are set under nominal (typ.) bias conditions. bias can be adjusted higher to achieve greater linearity and power; however, maximum total power dissipated is specified at 5.5 w (2) channel temperature directly affects a devices mttf. channel temperature should be kept as low as possible to maximize lifetime. electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (f ) small signal gain (s21) input return loss (s11) output return loss (s22) reverse isolation (s12) p1db psat oip3 at pout = 18 dbm per tone power detector range drain bias voltage (vd1,2,3) detector bias voltage (vdet,ref ) gate bias voltage (vg1,2,3) supply current (id1) supply current (id2) supply current (id3) units ghz db db db db dbm dbm dbm db vdc vdc vdc ma ma ma min. 1 12.0 19.0 10.0 10.0 31.0 40.0 - -2 typ. - 21.5 15.0 10.0 55.0 30.0 32.0 41.0 37.0 7.0 5.0 -1.0 100 200 400 max. 16.0 - 7.0 0.0 200 400 800 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1043-qh the xp1043-qh is a packaged linear power amplifier that operates over the 12.0-16.0 ghz frequency band. the device provides 21.5 db gain and 41 dbm output third order intercept point (oip3) across the band and is offered in an industry standard, fully molded 4x4mm qfn package. the packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. the device includes on-chip esd protection structures and dc by-pass capacitors to ease the implementation and volume assembly of the packaged part. the device is manufactured in gaas phemt device technology with bcb wafer coating to enhance ruggedness and repeatability of performance. xp1043-qh is well suited for point-to-point radio, lmds, satcom and vsat applications. general description (1) note: minimum specifications are set under nominal (typ.) bias conditions. bias can be adjusted higher to achieve greater linearity and power. february 2010 - rev 13-feb-10
power amplifier measurements page 2 of 7 12.0-16.0 ghz power amplifier qfn, 4x4mm p1043-qh xp1043-qh: s-parameters (db) vs. freq (ghz), (vdd=7v, id1=100ma, id2=200ma, id3=400ma) -25 -20 -15 -10 - 5 0 5 1 0 1 5 2 0 2 5 3 0 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 freq (ghz) s-parameter (db) s2 1 s1 1 s2 2 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2010 - rev 13-feb-10 x p 1 0 4 3 - q h : p ou t ( d bm) v s p i n ( d b m ) a t room temp . v d = 7 v, i q = 7 0 0m a 10 12 14 16 18 20 22 24 26 28 30 32 34 - 1 0 - 8 - 6 - 4 - 2 0 2 4 6 8 10 1 2 14 1 6 18 20 22 i nput p ow er ( d b m ) ou t pu t powe r ( db m ) p o ut, f re q = 1 2 .5 g h z p o ut, f re q = 1 3 .0 g h z p o ut, f re q = 1 3 .5 g h z p o ut, f re q = 1 4 .0 g h z p o ut, f re q = 1 4 .5 g h z p o ut, f re q = 1 5 .0 g h z p o ut, f re q = 1 5 .5 g h z x p 1 0 4 3 -qh : p out (db m ) v s p i n (db m ) a t + 8 5 c . v d = 7 v, i q = 7 0 0m a 10 12 14 16 18 20 22 24 26 28 30 32 34 - 1 0 - 8 - 6 - 4 - 2 0 2 4 6 8 10 1 2 14 1 6 18 20 22 i nput p ow er ( d b m ) ou t pu t powe r ( db m ) p o ut, fr eq = 1 2 . 5 g h z p o ut, fr eq = 1 3 . 0 g h z p o ut, fr eq = 1 3 . 5 g h z p o ut, fr eq = 1 4 . 0 g h z p o ut, fr eq = 1 4 . 5 g h z p o ut, fr eq = 1 5 . 0 g h z p o ut, fr eq = 1 5 . 5 g h z x p 1 043- q h : c /i3 (dbc) v s p o ut p e r t o ne ( d b m ) a t r o om t e mp . v d= 7 v , i d= 70 0 m a . 1 2 . 5 t o 15 . 5 g h z 0 5 10 15 20 25 30 35 40 45 50 55 60 1 4 15 1 6 1 7 1 8 1 9 2 0 2 1 2 2 o u tput pow e r (db m per ton e ) c i/ 3 ( d b c ) c i 3 , f r e q = 1 2 . 5 g h z , t e m p = 3 5 c c i 3 , f r e q = 1 3 . 5 g h z , t e m p = 3 5 c c i 3 , f r e q = 1 4 . 5 g h z , t e m p = 3 5 c c i 3 , f r e q = 1 5 . 5 g h z , t e m p = 3 5 c x p 104 3 - q h: c / i3 ( d b c ) v s pout p e r t one (d b m ) a t at + 8 5 c . v d= 7 v , i d= 70 0 m a . 1 2 . 5 t o 15 . 5 g h z 0 5 10 15 20 25 30 35 40 45 50 55 60 65 1 4 15 1 6 1 7 1 8 1 9 2 0 2 1 2 2 o u tput pow e r (db m per ton e ) c i/ 3 ( d b c ) c i 3 , f re q = 1 2 . 5 g h z , t e m p = 8 5 c c i 3 , f re q = 1 3 . 5 g h z , t e m p = 8 5 c c i 3 , f re q = 1 4 . 5 g h z , t e m p = 8 5 c c i 3 , f re q = 1 5 . 5 g h z , t e m p = 8 5 c xp1043-qh: v_detect (mv) vs output power (dbm) freq = 12.5-15.5 ghz, temp = -45 to 85 degree c 1 0 10 0 100 0 1 000 0 0 3 6 9 1 2 1 5 1 8 2 1 2 4 2 7 output power (dbm) detector voltage = vref - vdet (mv) 12.5g h z , 2 5 c 15.5g h z , 2 5 c 12.5g h z , - 4 5 c 15.5g h z , - 4 5 c 12.5g h z , 8 5 c 15.5g h z , 8 5 c
mttf page 3 of 7 12.0-16.0 ghz power amplifier qfn, 4x4mm p1043-qh these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. x p 1 043 - q h- 0g 00 : m t t f hou r s v s p ac k ag e b a s e t e m pe r a t u r e v d = 7. 0 v ,i d1 = 10 0 m a , i d 2= 2 0 0m a , i d3 = 40 0m a 1. 0 e + 0 3 1. 0 e + 0 4 1. 0 e + 0 5 1. 0 e + 0 6 1. 0 e + 0 7 1. 0 e + 0 8 1. 0 e + 0 9 1. 0 e + 1 0 1. 0 e + 1 1 1. 0 e + 1 2 1. 0 e + 1 3 1. 0 e + 1 4 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 1 2 0 1 3 0 package base temp (c) mttf (hours) x p 1 04 3 - q h - 0 g 00: t c h v s p a c k a g e b a s e t e m p e r at u r e v d = 7 . 0 v ,id1 = 10 0 m a ,i d 2 = 2 00 m a , i d 3 = 4 0 0 m a 5 0 7 5 10 0 12 5 15 0 17 5 20 0 22 5 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 10 0 11 0 12 0 13 0 package base temp (c) tch (c) xp 1 0 43 - q h - 0 n 00 : o pera t i n g p o w e r d e - r a t i n g c u r v e ( c o n t i nu o u s ) 0 1 2 3 4 5 6 2 5 5 0 7 5 10 0 12 5 15 0 17 5 package base temp (oc) pdiss (w) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2010 - rev 13-feb-10
page 4 of 7 package dimensions / layout functional schematic pin designations pin number 1-2 3 4 5-6 7 8 9 10 11 12 13-14 15 16 17-18 19 20 21 22-23 24 pin name gnd nc rf in gnd vg1 vg2 vg3 nc vdet vref nc rf out nc gnd vd3 vd2 vd1 gnd nc pin function ground not connected rf input ground gate 1 bias gate 2 bias gate 3 bias not connected pwr det pwr det reference not connected rf output not connected ground drain 3 bias drain 2 bias drain 1 bias ground not connected nominal value gnd gnd gnd ~ -1.0v ~ -1.0v ~ -1.0v gnd 5.0v 5.0v gnd gnd gnd 7.0v, 400 ma 7.0v, 200 ma 7.0v, 100 ma gnd gnd 12.0-16.0 ghz power amplifier qfn, 4x4mm p1043-qh mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2010 - rev 13-feb-10 1 2 3 4 1 6 1 5 1 4 1 3 1 0 g n d 5 6 1 7 1 8 rf i n v d 3 v d 2 v d 1 gnd g n d n c g n d g n d gnd rf out gnd n c n c n c g n d n c n c vg1 v g2 vg3 v de t vre f 1 1 1 2 7 8 9 2 4 2 3 2 2 2 1 2 0 1 9
page 5 of 7 bias circuit app note [1] biasing - as shown in the pin designations table, the device is operated under the nominal bias conditions of vd1,2,3 at 7.0v with 100, 200, 400ma respectively. the device can also be safely biased to a maximum of 9 v and 1.4 a to provide greater than 2 watts of saturated rf power. it is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. under heavy rf saturation the device will tend to self bias and pull the desired drain current. depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct drain current and thus drain voltage. the typical gate voltage needed to do this is -1.0v. make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. app note [2] board layout - as shown in the board layout, it is recommended to provide 100pf decoupling caps as close to the bias pins as possible, with additional 10f decoupling caps. app note [3] power detector - as shown in the schematic below, the power detector is implemented by providing +5v bias and measuring the difference in output voltage with standard op-amp in a differential mode configuration. 12.0-16.0 ghz power amplifier qfn, 4x4mm p1043-qh r - 5 v t o g a t e f r o m b i a s c i r c u i t e m i tt e r f o l l o w er p l a c ed be t w een t h e ( ga t e) ou t pu t o f t he b i a s c i r c u i t mm i c ga t e the output impedance of the bias circuits gate output should be small. when in saturation, the gates of the xp1043-qh can draw several ma which may cause adverse affects in a gate circuit with high output impedance. it is recommended that an emitter follower circuit be used (shown above), which follows the bias circuits gate output. this will result in a high-input impedance, low-output impedance buffer between the gate output of the bias circuit and the gate input of the xp1043-qh. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2010 - rev 13-feb-10
page 6 of 7 12.0-16.0 ghz power amplifier qfn, 4x4mm p1043-qh recommended layout recommended decoupling capacitors: 100pf 0402, 10f 0805 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2010 - rev 13-feb-10
page 7 of 7 handling and assembly information ordering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. electrostatic sensitive device - observe all necessary precautions when handling. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. package attachment - this packaged product from mimix broadband is provided as a rugged surface mount package compatible with high volume solder installation. vacuum tools or other suitable pick and place equipment may be used to pick and place this part. care should be taken to ensure that there are no voids or gaps in the solder connection so that good rf, dc and ground connections are maintained. voids or gaps can eventually lead not only to rf performance degradation, but reduced reliability and life of the product due to thermal stress. mimix lead-free rohs compliant program - mimix has an active program in place to meet customer and governmental requirements for eliminating lead (pb) and other environmentally hazardous materials from our products. all mimix rohs compliant components are form, fit and functional replacements for their non-rohs equivalents. lead plating of our rohs compliant parts is 100% matte tin (sn) over copper alloy and is backwards compatible with current standard snpb low-temperature reflow processes as well as higher temperature (260c reflow) pb free processes. part number for ordering description xp1043-qh-0g00 matte tin plated rohs compliant 4x4 24l qfn surface mount p ackage in bulk quantity xp1043-qh-0g0t matte tin plated rohs compliant 4x4 24l qfn surface mount p ackage in tape and reel xp1043-qh-ev1 xp1043-qh evaluation board typical reflow profiles reflow profile ramp up rate activation time and temperature time above melting point max peak temperature time within 5 oc of peak ramp down rate snpb 3-4 oc/sec 60-120 sec @ 140-160 oc 60-150 sec 240 oc 10-20 sec 4-6 oc/sec pb free 3-4 oc/sec 60-180 sec @ 170-200 oc 60-150 sec 265 oc 10-20 sec 4-6 oc/sec 12.0-16.0 ghz power amplifier qfn, 4x4mm p1043-qh c a u t i o n : e s d s e n s i t i ve appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2010 - rev 13-feb-10
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