sot23 npn silicon planar small signal transistors issue 2 ? february 95 partmarking detail: ? bcv71 ? k7 bcv72 ? k8 BCV71R ? k6 bcv72r ? k9 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5v peak pulse current i cm 200 ma continuous collector current i c 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector- base cut-off current i cbo 100 10 na ma v cb =20v v cb =20v,t amb =100c base - emitter voltage v be 550 750 mv i c =2ma, v ce = 5v collector-emitter saturation voltage v ce(sat) 120 210 250 mv mv i c =10ma, i b = 0.5ma i c = 50ma, i b =2.5ma base-emitter saturation voltage v be(sat) 750 850 mv mv i c =10ma, i b =0.5ma i c =50ma, i b =2.5ma static forward bcv71 current transfer ratio bcv72 h fe 110 90 220 i c =10ma, v ce =5v i c =2ma, v ce =5v 200 150 450 i c =10ma, v ce =5v i c =2ma, v ce =5v transition frequency f t 300 mhz i c =10ma, v ce =5v f = 35mhz collector capacitance c tc 4pfi e =i e =0, v cb = 10v f= 1mhz noise figure n 10 db i c = 200 m a, v ce = 5v r s =2k w , f=1khz b= 200hz spice parameter data is available upon request for this device bcv71 bcv72 page no c b e sot23
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