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hexfet ? power mosfet IRF7701GPBF absolute maximum ratings www.irf.com 1 05/15/09 hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design , that inter- national rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. the tssop-8 package, has 45% less footprint area of the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the tssop-8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. description ultra low on-resistance p-channel mosfet very small soic package low profile (< 1.1mm) available in tape & reel lead-free halogen-free parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -10 i d @ t a = 70c continuous drain current, v gs @ -4.5v -8.0 a i dm pulsed drain current -80 p d @t a = 25c power dissipation 1.5 p d @t a = 70c power dissipation 0.96 linear derating factor 12 mw/c v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c tssop-8

v dss r ds(on) max i d 0.011@v gs = -4.5v -10a -12v 0.015@v gs = -2.5v -8.5a 0.022@v gs = -1.8v -7.0a parameter max. units r ja maximum junction-to-ambient 83 c/w thermal resistance
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.5a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = -1.5a q rr reverse recoverycharge ??? 53 80 nc di/dt = 100a/s source-drain ratings and characteristics -80 -1.5 when mounted on 1 inch square copper board, t<10 sec s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.006 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.011 v gs = -4.5v, i d = -10a r ds(on) static drain-to-source on-resistance ??? 0.015 v gs = -2.5v, i d = -8.5a ??? 0.022 v gs = -1.8v, i d = -7.0a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 21 ??? ??? s v ds = -10v, i d = -10a ??? ??? 1.0 v ds = -12v, v gs = 0v ??? ??? -25 v ds = -9.6v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -8.0v gate-to-source reverse leakage ??? ??? 100 v gs = 8.0v q g total gate charge ??? 69 100 i d = -8.0a q gs gate-to-source charge ??? 9.1 14 nc v ds = -9.6v q gd gate-to-drain ("miller") charge ??? 21 32 v gs = -4.5v t d(on) turn-on delay time ??? 19 ??? v dd = -6.0v t r rise time ??? 20 ??? i d = -1.0a t d(off) turn-off delay time ??? 240 ??? r d = 6.0 ? t f fall time ??? 220 ??? v gs = -4.5v c iss input capacitance ??? 5050 ??? v gs = 0v c oss output capacitance ??? 1520 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 1120 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) a ? i dss drain-to-source leakage current na ns
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.01 0.1 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -7.00v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -1.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.0v 0.1 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.00v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -1.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.0v 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 v = -10v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -10a fig 4. normalized on-resistance vs. temperature
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 20 40 60 80 100 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -10a v = -9.6v ds 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1 0.1 %

+ - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage 0 20 40 60 80 100 -i d , drain current (a) 0.005 0.010 0.015 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -4.5v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 1.5 2.5 3.5 4.5 -v gs, gate -to -source voltage (v) 0.00 0.01 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -10a
www.irf.com 7 fig 14. threshold voltage vs. temperature typical power vs. time 0.01 0.10 1.00 10.00 100.00 time (sec) 0 10 20 30 40 p o w e r ( w ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.00 0.20 0.40 0.60 0.80 - v g s ( t h ) , v a r i a c e ( v ) i d = -250a
8 www.irf.com note: for the most current drawing please refer to ir website at http://www.irf.com/package/

!!! " " " " tssop8 package outline dimensions are shown in milimeters (inches)

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www.irf.com 9 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2009 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site.

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