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www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current, v gs @10v 5.8 a i d @ t a = 70c 4.6 i dm pulsed drain current 46 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c 1.3 linear derating factor 16 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c IRF7421D1PBF fetky mosfet / schottky diode notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 11) i sd 4.1a, di/dt 110a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2% surface mounted on fr-4 board, t 10sec parameter maximum units r ja junction-to-ambient 62.5 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings 10/13/04 the fetky family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. description co-packaged hexfet ? power mosfet and schottky diode ideal for synchronous regulator applications generation v technology so-8 footprint lead-free v dss = 30v r ds(on) = 0.035 ? schottky vf = 0.39v 8 1 2 3 4 5 6 7 d d d d g s a s a a top view so-8 tm pd- 95304
IRF7421D1PBF 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance ? 0.026 0.035 v gs = 10v, i d = 4.1a ? 0.040 0.060 v gs = 4.5v, i d = 2.1a v gs(th) gate threshold voltage 1.0 ? ? v v ds = v gs , i d = 250a g fs forward transconductance 4.6 ? ? s v ds = 15v, i d = 2.1a i dss drain-to-source leakage current ? ? 1.0 v ds = 24v, v gs = 0v ??25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ? ? -100 v gs = -20v gate-to-source reverse leakage ? ? 100 v gs = 20v q g total gate charge ? 18 27 i d = 4.1a q gs gate-to-source charge ? 2.2 3.3 nc v ds = 24v q gd gate-to-drain ("miller") charge ? 5.9 8.9 v gs = 10v (see figure 10) t d(on) turn-on delay time ? 6.7 ? v dd = 15v t r rise time ? 27 ? i d = 4.1a t d(off) turn-off delay time ? 20 ? r g = 6.2 ? t f fall time ? 16 ? r d = 3.7 ? c iss input capacitance ? 510 ? v gs = 0v c oss output capacitance ? 200 ? pf v ds = 25v c rss reverse transfer capacitance ? 84 ? ? = 1.0mhz (see figure 9) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) ? a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) ? ? 3.1 a i sm pulsed source current (body diode) ? ? 33 v sd body diode forward voltage ? ? 1.0 v t j = 25c, i s = 4.1a, v gs = 0v t rr reverse recovery time (body diode) ? 57 86 ns t j = 25c, i f = 4.1a q rr reverse recovery charge ? 93 140 nc di/dt = 100a/s mosfet source-drain ratings and characteristics

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IRF7421D1PBF www.irf.com 3
power mosfet characteristics 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v v , drain-to-source voltage (v) 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width t = 150c ds j fig 4. typical source-drain diode forward voltage 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 150c j
IRF7421D1PBF 4 www.irf.com r ds (on) , drain-to-source on resistance ( ? ) r ds (on) , drain-to-source on resistance ( ? ) power mosfet characteristics fig 8. maximum safe operating area fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage fig 5. normalized on-resistance vs. temperature 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 4.1a d 0.1 1 10 100 0.1 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 100s 1ms 10ms a a j

IRF7421D1PBF www.irf.com 5 power mosfet characteristics

fig 9. maximum effective transient thermal impedance, junction-to-ambient 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 30 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 v = 24v v = 15v ds ds i = 4.1a d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 11. maximum effective transient thermal impedance, junction-to-ambient
IRF7421D1PBF 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage fig.14 - typical junction capacitance vs. reverse voltage
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' 5-8 fig. 12 -typical forward voltage drop characteris- tics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
10 100 1000 0102030 t = 25c j reverse voltage - v (v) r t junction capacitance - c (pf) a
IRF7421D1PBF www.irf.com 7 rect ifier logo internat ional example: t his is an irf7807d1 (fet ky) xxxx 807d1 y = las t digit of t he year a = assembly site code ww = week lot code product (optional) p = disgnates lead - free dat e code (yww) part number e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches mi n max di m 8 e c .0075 .0098 0.19 0.25 .025 b as ic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jedec out line ms -012aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. cont rolling dimens ion: millime t er 3. dime ns ions ar e s h own in mil l ime t e r s [inch e s ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mold prot rus ions not t o exce ed 0.25 [.010]. 7 dimens ion is t he le ngt h of lead for s oldering t o a s ubs t rat e. mold prot rus ions not t o exce ed 0.15 [.006]. 8x 1.78 [.070] so-8 (fetky) package outline so-8 (fetky) part marking information
IRF7421D1PBF 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04

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