1 power f-mos fets unit: mm 2SK2960 silicon n-channel power f-mos fet n features l avalanche energy capacity guaranteed: eas > 250mj l v gss = 30v guaranteed l high-speed switching: t f = 55ns l no secondary breakdown n applications l contactless relay l diving circuit for a solenoid l driving circuit for a motor l control equipment l switching power supply 1: gate 2: drain 3: source to-220e package n electrical characteristics (t c = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance diode forward voltage input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time (delay time) rise time turn-off time (delay time) fall time symbol i dss i gss v dss v th r ds(on) | y fs | v dsf c iss c oss c rss t d(on) t r t d(off) t f conditions v ds = 320v, v gs = 0 v gs = 30v, v ds = 0 i d = 1ma, v gs = 0 v ds = 10v, i d = 1ma v gs = 10v, i d = 5a v ds = 10v, i d = 5a i dr = 10a, v gs = 0 v ds = 10v, v gs = 0, f = 1mhz v gs = 10v, i d = 5a v dd = 100v, r l = 20 w min 400 2 3 typ 0.4 5 1400 290 100 25 50 170 55 max 0.1 1 5 0.52 - 1.5 unit ma m a v v w s v pf pf pf ns ns ns ns n absolute maximum ratings (t c = 25c) parameter drain to source breakdown voltage gate to source voltage drain current avalanche energy capacity allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v dss v gss i d i dp eas * p d t ch t stg ratings 400 30 10 20 250 50 2 150 - 55 to +150 unit v v a a mj w c c * l = 5mh, i l = 10a, 1 pulse 9.90.3 23 1 4.60.2 2.90.2 2.60.1 2.540.2 0.750.1 1.20.15 5.080.4 15.00.3 13.7 +0.5 C0.2 f 3.20.1 3.00.2 8.00.2 4.10.2 solder dip 1.450.15 0.70.1 7
2 power f-mos fets 2SK2960 i d ? v gs | y fs | ? i d r ds(on) ? i d r ds(on) ? v gs c iss , c oss , c rss ? v ds t d(on) , t r , t f , t d(off) ? i d r th(t) ? t 0 100 25 75 50 10 10 4 10 3 10 2 f=1mhz ta=25?c c iss c oss c rss drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf ) 08 26 47 15 3 0 10.0 7.5 2.5 5.0 v ds =10v ta=25?c gate to source voltage v gs ( v ) drain current i d ( a ) 030 25 20 515 10 0 6 5 4 3 2 1 ta=25?c gate to source voltage v gs ( v ) drain to source on-resistance r ds(on) ( w ) 010 8 26 4 0 250 200 150 100 50 v dd =100v v gs =10v t d(off) t d(on) t r t f drain current i d ( a ) switching time t d(on) ,t r ,t f ,t d(off) ( ns ) 0 10.0 2.5 7.5 5.0 0 800 600 200 500 700 400 100 300 ta=25?c v gs =10v drain current i d ( a ) drain to source on-resistance r ds(on) ( m w ) 10 C4 10 10 C3 10 C1 10 C2 110 2 10 3 10 C2 10 C1 1 10 10 2 note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w ) 0 10.0 2.5 7.5 5.0 0 8 6 2 5 7 4 1 3 v ds =25v ta=25?c drain current i d ( a ) forward transfer admittance |y fs | ( s )
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