1 PNA1605 silicon npn phototransistor for optical control systems phototransistors 50 r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out sig.in (input pulse) (output pulse) 10% 90% t d t r t f unit : mm 3.5 0.15 4.5 0.15 1.6 0.15 0.8 0.1 2.1 0.15 not soldered 2.0 3-0.45 0.2 0.45 0.2 10 min. (2.4) 1.5 0.2 3.9 0.25 12.5 min. 1: emitter 2: collector 3: base 1.27 123 1.27 absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v collector to base voltage v cbo 30 v emitter to collector voltage v eco 5v emitter to base voltage v ebo 5v collector current i c 10 ma collector power dissipation p c 100 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.05 2 m a collector photo current i ce(l) v ce = 10v, l = 100 lx *1 0.2 0.8 ma peak sensitivity wavelength l p v ce = 10v 900 nm acceptance half angle q measured from the optical axis to the half power point 70 deg. rise time t r *2 v cc = 10v, i ce(l) = 1ma 8 m s fall time t f *2 r l = 100 w 9 m s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 1000 lx *1 0.3 0.6 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit features high sensitivity wide directional sensitivity, matched to gaas leds : q = 70 deg. (typ.) fast response : t r, t f = 8 m s (typ.) side-view type package
2 phototransistors PNA1605 directivity characteristics 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 v ce = 10v ta = 25?c t r ?i ce(l) collector photo current i ce(l) (ma) rise time t r ( s) v cc = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? t f ?i ce(l) collector photo current i ce(l) (ma) fall time t f ( s) v cc = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? v ce = 10v l = 100 lx t = 2856k i ce(l) ?ta 10 2 1 10 ambient temperature ta (?c ) ?40 0 40 80 120 10 ? collector photo current i ce(l) (ma) ?20 0 40 80 20 60 100 i ceo ?ta 10 2 10 ? 10 ? 1 10 ? 10 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 ? ta = 25?c t = 2856k i ce(l) ?v ce 10 8 6 2 4 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 020 16 812 424 p c ?ta 120 100 80 60 40 20 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 i ce(l) ?l illuminance l (lx) collector photo current i ce(l) (ma) v ce = 10v ta = 25?c t = 2856k 10 3 10 2 10 1 10 ? 10 10 3 10 4 10 2 10 ? 1 20 100 80 60 40 relative sensitivity s (%) l =1000 lx 100 lx 200 lx 300 lx 400 lx 500 lx 600 lx 700 lx 800 lx 900 lx r l = 1k 500 100 r l = 1k 500 100
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