1 PNZ0115 silicon npn phototransistor for optical control systems features high sensitivity wide directional sensitivity, matched to gaas leds : q = 35 deg. (typ.) fast response : t r = 5 m s (typ.) side-view type package electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.02 2 m a collector photo current i ce(l) v ce = 10v, l = 100 lx *1 2.0 4.5 ma peak sensitivity wavelength l p v ce = 10v 900 nm acceptance half angle q measured from the optical axis to the half power point 35 deg. rise time t r *2 v cc = 10v, i ce(l) = 5ma 5 m s fall time t f *2 r l = 100 w 6 m s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 1000 lx *1 0.3 0.6 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit phototransistors 50 r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out sig.in (input pulse) (output pulse) 10% 90% t d t r t f unit : mm 2.3 1.9 4.5 0.3 123 1.2 4.2 0.3 ?.5 0.2 4.8 0.3 2.4 2.4 12.5 min. 10.0 min. 2.0 0.45 0.2 3-0.45 0.2 not soldered 1.27 1.27 1: emitter 2: collector 3: base absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v collector to base voltage v cbo 30 v emitter to collector voltage v eco 5v emitter to base voltage v ebo 5v collector current i c 10 ma collector power dissipation p c 100 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c
2 phototransistors PNZ0115 p c ?ta 120 100 80 60 40 20 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 ta = 25?c t = 2856k i ce(l) ?v ce 20 16 12 4 8 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 020 16 812 424 i ce(l) ?l 10 2 10 1 illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 ? 10 ? 1 v ce = 10v ta = 25?c t = 2856k spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 v ce = 10v ta = 25?c v ce = 10v t = 2856k i ce(l) ?ta 10 2 1 10 ambient temperature ta (?c ) ?40 0 40 80 120 10 ? collector photo current i ce(l) (ma) i ceo ?ta 10 2 1 10 ? 10 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 ? ?20 0 40 80 20 60 100 t r ?i ce(l) collector photo current i ce(l) (ma) rise time t r ( s) v cc = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? t f ?i ce(l) collector photo current i ce(l) (ma) fall time t f ( s) v cc = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics 20 90 100 80 70 60 50 40 30 relative sensitivity s (%) r l = 1k 500 100 r l = 1k 500 100 l = 100 lx 10 lx 50 lx 100 lx l =250 lx
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