BBY52-05W jul-02-2001 1 silicon tuning diode ? high q hyperabrupt tuning diode ? designed for low tuning voltage operation for vco's in mobile communications equipment 1 3 vso05561 2 eha07179 3 12 a1 a2 c1/c2 type marking pin configuration package BBY52-05W s2s 1=a1 2=a2 3=c1/c2 sot323 maximum ratings parameter value unit symbol diode reverse voltage 7 v v r i f 20 ma forward current c -55 ... 150 operating temperature range t op storage temperature t stg -55 ... 150
BBY52-05W jul-02-2001 2 electrical characteristics at t a = 25c, unless otherwise specified. unit parameter values symbol min. max. typ. dc characteristics - 10 na i r reverse current v r = 6 v - - reverse current v r = 6 v, t a = 65 c i r 100 - ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz c t 2.2 2 1.75 1.45 1.85 1.5 1.35 1.15 1.4 0.95 0.9 0.85 pf capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz c t1 / c t4 1.1 2.1 - 1.6 ? 1.7 0.9 series resistance v r = 1 v, f = 1 ghz - r s - 0.1 pf case capacitance f = 1 mhz c c - - - l s nh series inductance 1.4
BBY52-05W jul-02-2001 3 diode capacitance c t = f ( v r ) f = 1mhz 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v 4.0 v r 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 pf 2.60 c t reverse current i r = f ( v r ) t a = 25 c 0.0 1.0 2.0 3.0 4.0 5.0 v 7.0 v r 0 5 10 15 20 25 30 35 pa 45 i r
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