1999. 11. 30 1/2 semiconductor technical data ktc8050 epitaxial planar npn transistor revision no : 3 high current application. feature complementary to ktc8550. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 50 na collector-base breakdown voltage v (br)cbo i c =0.5ma, i e =0 35 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 30 - - v dc current gain h fe (1) (note) v ce =1v, i c =50ma 100 - 300 h fe (2) v ce =1v, i c =350ma 60 - - collector-emitter saturation voltage v ce(sat) i c =500ma, i b =20ma - - 0.5 v base-emitter voltage v be v ce =1v, i c =500ma - - 1.2 v transition frequency f t v ce =5v, i c =10ma - 120 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 13 - pf note : h fe (1) classification c : 100 200, d : 150 300 characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 800 ma emitter current i e -800 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150
1999. 11. 30 2/2 ktc8050 revision no : 3 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 12 3456 200 400 600 800 1k collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c ) pc - ta collector-emitter saturation ce(sat) 0.01 collector current i (ma) c v - i i - v cbe be base-emitter voltage v (v) c collector current i (ma) emitter ce(sat) c voltage v (v) 0.03 0.1 0.3 1 common emitter i /i =25 c b common emitter v =1v ce common ta=25 c 1k 300 13 100 0.05 0.5 ta=100 c ta=25 c ta=-25 c i =1ma b 1k ta=-25 c ta=25 c ta=100 c 1k ce v =1v common emitter 300 100 50 30 100 30 c fe h - i c collector current i (ma) 1310 300 500 fe dc current gain h 10 30 10 2 k 8 7 6 5 4 3 2 0 ta=1 00 c 25 c -25 c 0 1 0.2 0.4 0.6 0.8 1.0 1.2 3 5 10 30 50 100 300 500 1k ta=1 00 c ta=2 5 c ta=-25 c 100 200 300 400 500 600 700 25 50 75 100 125 150 175
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