vishay siliconix si4384dy document number: 72645 s09-0226-rev. c, 09-feb09 www.vishay.com 1 n-channel reduced q g , fast switching mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? gen ii power mosfets ? pwm optimized ? 100 % r g tested applications ? high-side dc/dc conversion - notebook - desktop - server product summary v ds (v) r ds(on) ( )i d (a) 30 0.0085 at v gs = 10 v 15 0.0125 at v gs = 4.5 v 12 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: si4384dy-t1-e3 (lead (pb)-free) SI4384DY-T1-GE3 (lead (pb)-free and halogen-free) d g s n-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d 15 10 a t a = 70 c 12 8 pulsed drain current i dm 50 continuous source current (diode conduction) a i s 2.8 1.3 single pulse avalanche current l = 0.1 mh i as 25 avalanche energy e as 31 mj maximum power dissipation a t a = 25 c p d 3.1 1.47 w t a = 70 c 20.95 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (mosfet) a t 10 s r thja 34 40 c/w steady state 71 85 maximum junction-to-foot (drain) steady state r thjf 17 20
www.vishay.com 2 document number: 72645 s09-0226-rev. c, 09-feb09 vishay siliconix si4384dy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.007 0.0085 v gs = 4.5 v, i d = 12 a 0.0105 0.0125 forward transconductance a g fs v ds = 15 v, i d = 15 a 56 s diode forward voltage a v sd i s = 2.8 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 15 a 12 18 nc gate-source charge q gs 5.9 gate-drain charge q gd 4.0 gate resistance r g 0.8 1.7 2.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 10 15 ns rise time t r 13 20 turn-off delay time t d(off) 45 70 fall time t f 13 20 source-drain reverse recovery time t rr i f = 2.8 a, di/dt = 100 a/s 25 50 output characteristics 0 10 20 30 40 50 01234 5 v gs = 10 v thru 5 v 4 v v ds - drain-to-source voltage (v) - d rain current (a) i d transfer characteristics 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72645 s09-0226-rev. c, 09-feb09 www.vishay.com 3 vishay siliconix si4384dy typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.004 0.008 0.012 0.016 0.020 0 1020304050 v gs = 10 v - on-resistance ( r ds(on) ) i d - drain current (a) v gs = 4.5 v 0 1 2 3 4 5 6 03691215 v ds = 15 v i d = 15 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 440 880 1320 1760 2200 0 4 8 12 16 20 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 15 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) 0.000 0.006 0.012 0.018 0.024 0.030 0246810 i d = 15 a - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 72645 s09-0226-rev. c, 09-feb09 vishay siliconix si4384dy typical characteristics 25 c, unless otherwise noted threshold voltage - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature ( c) single pulse power 0.01 0 1 50 20 30 10 600 0.1 time (s) 10 40 power (w) 100 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 ms - drain current (a) i d 0.1 t c = 25 c single pulse 10 ms 100 ms dc 1 s 10 s v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified limited by r ds(on) * normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 67 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72645 s09-0226-rev. c, 09-feb09 www.vishay.com 5 vishay siliconix si4384dy typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72645. normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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