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bts737s2 infineon technologies page 1 of 1 2001-07-13 smart high-side power switch with reversave ? ? ? ? four channels: 4 x 35m ? ? ? ? advanced current sense product summary package operating voltage v bb(on) 4.5 ...40v active channels one four parallel on-state resistance r on 35m ? 9m ? nominal load current i l(nom) 5.4a 11.1a current limitation i l(scr) 21a 21a general description ? n channel vertical power mosfet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos ? technology. ? fully protected by embedded protection functions applications ? c compatible high-side power switch with diagnostic feedback for 12v and 24v grounded loads ? all types of resistive and capacitve loads ? most suitable for loads with high inrush currents, so as lamps ? replaces electromechanical relays, fuses and discrete circuits basic functions ? very low standby current ? improved electromagnetic compatibility (emc) ? cmos compatible input ? stable behaviour at undervoltage ? wide operating voltage range protection functions ? reverse battery protection without external components ( reversave ? ? ? ? ) ? short circuit protection ? overload protection ? current limitation ? thermal shutdown ? overvoltage protection (not load dump) without external resistor ? loss of ground protection ? electrostatic discharge protection (esd) diagnostic function ? proportional load current sense (with defined fault signal during thermal shutdown) block diagram p-dso-28 vbb logic channel 3 channel 4 gnd load 1 load 2 logic channel 1 channel 2 load 4 load 3 in1 is1 is2 in2 in3 is3 is4 in4
bts737s2 infineon technologies page 2 2001-07-13 functional diagram only active in off-state . channel 1 out1 overvoltage p rotection logic internal volta g e su pp l y esd temperature sensor clamp for inductive load gate control + charge pump current limit reverse battery protection proportional sense current control and protection circuit of channel 2 control and protection circuit of channel 3 control and protection circuit of channel 4 in1 vbb gnd1/2 in2 in3 in4 out2 out3 out4 load gnd3/4 is1 is2 is3 is4 r 0
bts737s2 infineon technologies page 3 2001-07-13 pin definitions and functions pin symbol function 1, 7, 8, 14, 15, 28 v bb positive power supply voltage . design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance 4in1 3in2 11 in3 10 in4 input 1,2, 3,4 activates channel 1,2,3,4 in case of logic high signal 25,26,27 out1 22,23,24 out2 19,20,21 out3 16,17,18 out4 output 1,2,3,4 protected high-side power output of channel 1,23,4. design the wiring for the max. short circuit current 5is1 6is2 12 is3 13 is4 diagnostic feedback 1 .. 4 of channel 1 to 4 providing a sense current, proportional to the load current 2 gnd1/2 ground of chip 1 (channel 1,2) 9 gnd3/4 ground of chip 2 (channel 3,4) pin configuration (top view) v bb 1 ? 28 v bb gnd1/2 2 27 out1 in2 3 26 out1 in1 4 25 out1 is1 5 24 out2 is2 6 23 out2 v bb 722out2 v bb 821out3 gnd3/4 9 20 out3 in4 10 19 out3 in3 11 18 out4 is3 12 17 out4 is4 13 16 out4 v bb 14 15 v bb
bts737s2 infineon technologies page 4 2001-07-13 maximum ratings at t j = 25c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 6) v bb 43 v supply voltage for full short circuit protection t j,start = -40 ...+150c v bb 36 v load current (short-circuit current, see page 6) i l self-limited a load dump protection 1) v loaddump = v a + v s , v a = 13.5 v r i 2) = 2 ? , t d = 400 ms; in = low or high, each channel loaded with r l = 4.7 ? , v load dump 3 ) 60 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) 4) t a = 25c: (all channels active) t a = 85c: p tot 3.7 1.9 w maximal switchable inductance, single pulse v bb = 12v, t j,start = 150c 4) , i l = 4.0 a, e as = 0.8j, 0 ? one channel: i l = 6.0 a, e as = 1.0j, 0 ? two parallel channels: i l = 9.5 a, e as = 1.5j, 0 ? four parallel channels: see diagrams on page 11 z l 33 37 64 mh electrostatic discharge capability (esd) in: (human body model) is: out to all other pins shorted: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 r=1.5k ? ; c=100pf v esd 1.0 4.0 8.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through sense pin (dc) see internal circuit diagram page 10 i in i is 0.3 0.3 ma 1) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 75 ? resistor for the gnd connection is recommended. 2) r i = internal resistance of the load dump test pulse generator 3) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 4) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 16
bts737s2 infineon technologies page 5 2001-07-13 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance junction - soldering point 5)6), each channel: r thjs -- -- 11 k/w junction ? ambient 6) @ 6 cm 2 cooling area one channel active: all channels active: r thja -- -- 40 33 -- -- electrical characteristics parameter and conditions, each of the four channels symbol values unit at t j = -40...+150c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (v bb to out); i l = 5 a, v bb 7v each channel, t j = 25c: t j = 150c: two parallel channels, t j = 25c: four parallel channels, t j = 25c: see diagram, page 12 r on -- -- -- -- 30 55 15 8 35 64 18 9 m ? nominal load current one channel active: two parallel channels active: four parallel channels active: device on pcb 6) , t a = 85c, t j 150c i l(nom) 5.0 6.7 10.5 5.4 7.4 11.1 -- -- -- a output current while gnd disconnected , v in = 0, see diagram page 11; (not tested specified by design) i l(gndhigh) -- -- 1 ma turn-on time 7) in to 90% v out : turn-off time in to 10% v out : r l = 12 ? t on t off -- -- 50 120 150 220 s slew rate on 7) 10 to 30% v out , r l = 12 ? : d v /dt on 0.3 -- 1 v/ s slew rate off 7) 70 to 40% v out , r l = 12 ? : -d v /dt off 0.15 -- 1 v/ s 5) soldering point: upper side of solder edge of device pin 7,8. see page 16. 6) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 16 7) see timing diagram on page 13.
bts737s2 parameter and conditions, each of the four channels symbol values unit at t j = -40...+150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies page 6 2001-07-13 operating parameters operating voltage v bb(on) 4.5 -- 40 v overvoltage protection 8) i bb = 40 ma v bb(az) 41 47 52 v standby current 9) t j =-40...25 c : v in = 0; see diagram page 12 t j =150 c: i bb(off) -- -- 10 40 25 80 a not tested, specified by design: t j =125 c: -- 25 off-state output current t j =-40...25 c: (included in i bb(off) ) v in = 0; each channel; t j =150 c : i l(off) -- -- 1 -- 4 15 a operating current, v in = 5v, i gnd = i gnd1/2 + i gnd3/4 , one channel on: four channels on: i gnd -- -- 1.6 6.0 -- -- ma protection functions 10) current limit, (see timing diagrams, page 14) i l(lim) 36 45 58 a repetitive short circuit current limit, t j = t j t each channel two,three or four parallel channels (see timing diagrams, page 14) i l(scr) -- -- 40 40 -- -- a initial short circuit shutdown time t j,start =25 c: (see timing diagrams on page 14) t off(sc) -- 4 -- ms output clamp (inductive load switch off) 11) at v on(cl) = v bb - v out , i l = 40 ma t j =-40 c..25 c: t j =150 c: v on(cl) 18 14 21 17 30 20 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k 8) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 ? resistor for the gnd connection is recommended). see also v on(cl) in table of protection functions and circuit diagram on page 10. 9) measured with load; for the whole device; all channels off 10) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 11) if channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest v on(cl)
bts737s2 parameter and conditions, each of the four channels symbol values unit at t j = -40...+150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies page 7 2001-07-13 reverse battery reverse battery voltage 12) - v bb -- -- 28 v on-state resistance with reverse batter y i l = 2a; v bb = 12v tj =25 c: tj =150 c: r on -- -- 45 80 60 120 m ? input 13) input resistance (see circuit page 10) r i 2.5 3.5 6.0 k ? input turn-on threshold voltage v in(t+) 1.7 -- 3.2 v input turn-off threshold voltage v in(t-) 1.5 -- -- v input threshold hysteresis ? v in(t) -- 0.3 -- v off state input current v in = 0.4 v: i in(off) 1--35 a on state input current v in = 5 v: i in(on) 20 50 90 a 12) power dissipation is higher compared to normal operating conditions due to the elevated on-state reistance. the temperature protection and sense functionality is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 4 and circuit page 10). 13) if ground resistors r gnd are used, add the voltage drop across these resistors.
bts737s2 parameter and conditions, each of the four channels symbol values unit at t j = -40...+150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies page 8 2001-07-13 diagnostic characteristics current sense ratio, static on-condition, k ilis = i l : i is k ilis -- 5 000 -- -40 c i l = 10 a: i l = 2 a: i l = 1 a: i l = 0.5 a: 4575 4100 4200 3580 5000 5000 5200 5800 5425 5900 6200 8080 +25 c i l = 10 a: i l = 2 a: i l = 1 a: i l = 0.5 a: 4600 4250 4310 3820 4900 4900 5100 5600 5200 5550 6010 7320 +150 c i l = 10 a: i l = 2 a: i l = 1 a: i l = 0.5 a: 4675 4475 4350 4200 4900 4900 5000 5200 5125 5325 5650 6200 sense signal in case of fault-conditions 14) v fault 5.8 6.3 6.9 v sense signal delay after thermal shutdown 15) t delay(fault) -- -- 1 ms sense current saturation i is,lim 4----ma current sense output voltage limitation i is = 0, i l = 5 a: v is(lim) 5.8 6.3 6.9 v current sense leakage/offset current v in =0, v is = 0, i l = 0: i is(ll) -- -- 1 a v in =5 v, v is = 0, i l = 0: i is(lh) -- 2.5 -- current sense settling time to i is static 10% after positive input slope, i l = 0 5 a, (not tested, specified by design) t son(is) -- -- 300 s internal output pull down only active in off-state r 0 -- 7 -- k ? 14) in the case of current limitation or thermal shutdown the sense signal is no longer a current proportional to the load current, but a fixed voltage of typ. 5 v. 15) in the case of thermal shutdown the v fault signal remains for t delay(fault) longer than the restart of the switch (see diagram on page 15).
bts737s2 infineon technologies page 9 2001-07-13 truth table input level output level current sense i is normal operation l h l h 0 nominal current- limitation 16) hh v fault short circuit to gnd l h l l 0 v fault overtemperature l h l l 0 v fault short circuit to v bb l h h h 0 bts737s2 infineon technologies page 10 2001-07-13 input circuit (esd protection), in1 to in4 in gnd i r esd-zd i i i the use of esd zener diodes as voltage clamp at dc conditions is not recommended. sense output normal operation: i s = i l / k ilis v is = i s * r is ; r is = 1 k ? nominal r is > 500 ? is gnd is r is i esd-zd is v v f sense output lo g ic esd-zener diode: v esd = 6.1 v typ., max 14 ma; operation under fault condition so as thermal shut down or current limitation gnd is r esd-zd v fault v fault v f sense output logic v fault = 6v typ v fault < v esd under all conditions overvoltage output clamp, out1 or out2 +v bb out v z v on power gnd v on clamped to v on(cl) = 21 v typ. overvoltage protection of logic part gnd1/2 or gnd3/4 + v bb is is r gnd integrated gnd resistor r gnd signal gnd logic v z2 in r i v z1 v z1 = 6.1 v typ., v z2 = 47 v typ., r i = 3.5 k ? typ. , r gnd = 75 ? reverse battery protection logic is r in is out l r power gnd integrated gnd resistor r gnd signal gnd power mosfet i r v bb - logic mosfet r gnd = 75 ?, r i = 3.5 k ? typ , in case of reverse battery the channel of the mosfet is turned on. temperature protection and sense functionality is not active during inverse current operation.
bts737s2 infineon technologies page 11 2001-07-13 gnd disconnect profet v in is out gnd bb v bb v in v st v gnd any kind of load. in case of in = high is v out v in - v in(t+) . due to v gnd > 0, no v st = low signal available. v bb disconnect with energized inductive load profet v in is out gnd bb v bb high for inductive load currents up to the limits defined by z l (max. ratings and diagram on page 11) each switch is protected against loss of v bb . consider at your pcb layout that in the case of vbb dis- connection with energized inductive load all the load current flows through the gnd connection. inductive load switch-off energy dissipation profet v in is out gnd bb = e e e e a s bb l r e load r l l { l z energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off (one channel) 4) l = f (i l ); t j,start = 150 c, v bb = 12 v, r l = 0 ? z l [mh] 1 10 100 1000 01234567 0.1 i l [a]
bts737s2 infineon technologies page 12 2001-07-13 typ. on-state resistance r on = f (v bb ,t j ) ; i l = 2 a, in = high r on [mohm] 60 50 180 30 20 0 3 5 7 9 30 40 tj = 150c 25c -40c v bb [v] typ. standby current i bb(off) = f (t j ) ; v bb = 9...34 v, in1,2,3,4 = low i bb(off) [ a] 0 5 10 15 20 25 30 35 40 45 -50 0 50 100 150 200 t j [ c]
bts737s2 infineon technologies page 13 2001-07-13 figure 1a: switching a resistive load, change of load current in on-condition: in out l t v i i s ,v s t son(is) tt slc(is) slc(is) load 1 load 2 soff(is) t t t on off the sense signal is not valid during settling time after turn on or change of load current. figure 1b: v bb turn on: in v l i bb i s ,v s proper turn on under all conditions figure 1c: behaviour of sense output: sense current (i s ) and sense voltage (v s ) as function of load current dependent on the sense resistor shown is v s and i s for three different sense resistors. curve 1 refers to a low resistor, curve 2 to a medium-sized resistor and curve 3 to a big resistor. note, that the sense resistor may not fall short of a minimum value of 500 ? . v s i l(lim) v fault v esd i s i l i l 1 2 1 3 2 3 i s = i l / k ilis v is = i s * r is ; r is = 1 k ? nominal r is > 500 ? functionality diagrams all diagrams are shown for chip 1 (channel 1/2). for chip 2 (channel 3/4) the diagrams are valid too. the channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels
bts737s2 infineon technologies page 14 2001-07-13 figure 2a: switching a lamp: in st out l t v i the initial peak current should be limited by the lamp and not by the current limit of the device. figure 2b: switching a lamp with current limit: the behaviour of is and vs is shown for a resistor, which refers to curve 1 in figure 1c in out l t v i i s v s v fault figure 3a: short circuit: shut down by overtempertature, reset by cooling in i l(scr) i i l(lim) l v s v fault heating up may require several milliseconds, depending on external conditions i ll(lim ? ) = 50 a typ. increases with decreasing temperature. figure 3b: turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) in1/2 l(scr) i i l1 + i l2 i l(scp) t off(sc) v s1 , v s2 v fault
bts737s2 infineon technologies page 15 2001-07-13 figure 4a: overtemperature: reset if t j < t jt the behaviour of is and vs is shown for a resistor, which refers to curve 1 in figure 1c t in i l v s t j i s t delay(fault) v fault figure 6a: current sense versus load current: 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0123456 i l [a] [ma] i is figure 6b: current sense ratio 18) : 0 5000 1 0000 012345678910111213 i l [a] k ilis 18) this range for the current sense ratio refers to all devices. the accuracy of the k ilis can be raised at least by a factor of two by calibrating the value of k ilis for every single device.
bts737s2 infineon technologies page 16 2001-07-13 package and ordering code standard: p-dso-28-16 sales code bts 737 s2 ordering code q67060-s7017 114 15 28 18.1 -0.4 index marking 1) 2.45 -0.1 7.6 10.3 ?.3 -0.2 0.2 2.65 max -0.2 1.27 0.23 +0.09 0.1 0.4 0.35 x 45? +0.8 +0.15 0.35 2) 8? max 0.2 28x 1) 2) does not include dambar protrusion of 0.05 max per side 1) does not include plastic or metal protrusions of 0.15 max rer side gps05123 all dimensions in millimetres definition of soldering point with temperature t s : upper side of solder edge of device pin 15. pin 7,8 printed circuit board (fr4, 1.5mm thick, one layer 70 m, 6cm 2 active heatsink area) as a reference for max. power dissipation p tot , nominal load current i l(nom) and thermal resistance r thja published by infineon technologies ag, bereich bauelemente, vertrieb, produkt-information, balanstra?e 73, d-81541 mnchen infineon technologies ag 2001. all rights reserved as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. the information describes a type of component and shall not be considered as warranted characteristics. the characteristics for which siemens grants a warranty will only be specified in the purchase contract. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the siemens companies and representatives woldwide (see address list). due to technical requirements components may contain dan- gerous substances. for information on the type in question please contact your nearest infineon technologies ag office, semiconductor group. siemens ag is an approved cecc manufacturer. packing: please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 19 ) of the semiconductor group of infineon technologies ag, may only be used in life supporting devices or systems 20 ) with the express written approval of the semiconductor group of infineon technologies ag. 19) a critical component is a component used in a life-support device or system whose failure can reas onably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 20) life support devices or systems are int ended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

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