i c , nom 200 a i c 295 a min. typ. max. - 1,7 2,15 v - 2,0 - v gate schwellenspannung i c = 8ma, v ce = v ge , t vj = 25c gate charge gateladung v ge = -15v...+15v grenzlastintegral 5,0 5,8 na - 400 0,5 1,9 - c t p = 1ms i frm 400 a t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom gesamt verlustleistung total power dissipation v gate emitter peak voltage 200 gate emitter spitzenspannung dauergleichstrom a dc forward current t c = 25c dc collector current reverse transfer capacitance rckwirkungskapazit?t f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage t vj = 25c v ces 400 - - +/- 20 7,8 - v ge(th) c ies q g i ges date of publication: 2002-10-07 revision: 3.0 approved: sm tm; wilhelm rusche gate threshold voltage v ge = 0v, t vj = 25c, v ce = 600v prepared by: mod-d2; mark mnzer gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c kollektor emitter reststrom collector emitter cut off current technische information / technical information df200r12ke3 igbt-module igbt-modules 2,5 kv i f 1200 v w k a2s i crm p tot periodischer spitzenstrom repetitive peak forward current v r = 0v, t p = 10ms, t vj = 125c a 1040 i2t value elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values v ges i2t - input capacitance insulation test voltage rms, f= 50hz, t= 1min. v isol isolations prfspannung v cesat charakteristische werte / characteristic values v nf nf 14 - 6,5 - transistor wechselrichter / transistor inverter eingangskapazit?t kollektor emitter s?ttigungsspannung i c = 200a, v ge = 15v, t vj = 25c f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v collector emitter saturation voltage i c = 200a, v ge = 15v, t vj = 125c i ces c res ma - - 5 1 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules min. typ. max. - 0,25 - s - 0,30 - s - 0,09 - s - 0,10 - s - 0,55 - s - 0,65 - s - 0,13 - s - 0,18 - s - 1,65 2,15 v - 1,65 - v - 150 - a - 190 - a - 20 - c - 36 - c - 9 - mj - 17 - mj - a sc data v cc = 900v, v cemax = v ces - l ce di/dt einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls - nh m ? - lead resistance, terminal-chip t c = 25c v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c q r ausschaltenergie pro puls reverse recovery energy e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c i f = 200a, -di f /dt= 2000a/s sperrverz?gerungsladung recovered charge i f =200a, -di f /dt= 2000a/s r cc/ee l ce kurzschlussverhalten 0,7 - 20 t p 10s, v ge 15v, t vj 125c i sc - 800 - mj - mj 35 e on i c = 200a, v cc = 600v, l = 80nh v ge = 15v, r g = 3,6 ? , t vj = 125c 15 v ge = 15v, r g = 3,6 ? , t vj = 125c - e off i c = 200a, v cc = 600v, l = 80nh t d,off v ge = 15v, r g = 3,6 ? , t vj = 25c v ge = 15v, r g = 3,6 ? , t vj = 125c i c = 200a, v cc = 600v v ge = 15v, r g = 3,6 ? , t vj = 25c t d,on v ge = 15v, r g = 3,6 ? , t vj = 125c t f v ge = 15v, r g = 3,6 ? , t vj = 25c v ge = 15v, r g = 3,6 ? , t vj = 125c - i c = 200a, v cc = 600v t r v ge = 15v, r g = 3,6 ? , t vj = 25c v ge = 15v, r g = 3,6 ? , t vj = 125c i c = 200a, v cc = 600v - v f forward voltage durchlassspannung i f = 200a, v ge = 0v, t vj = 25c i f = 200a, v ge = 0v, t vj = 125c inversdiode / free wheel diode i rm v r = 600v, v ge = -15v, t vj = 125c v r = 600v, v ge = -15v, t vj = 25c i f =200a, -di f /dt= 2000a/s charakteristische werte / characteristic values rckstromspitze peak reverse recovery current charakteristische werte / characteristic values transistor wechselrichter / transistor inverter einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) anstiegszeit (induktive last) rise time (inductive load) i c = 200a, v cc = 600v turn off energy loss per pulse leitungswiderstand, anschluss-chip stray inductance module modulinduktivit?t fallzeit (induktive last) fall time (inductive load) 2 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules - 1,65 2,15 v - 1,65 - v - 210 - a - 270 - a - 30 - c - 56 - c - 14 - mj - 26 - mj r thjc - - 0,12 k/w - - 0,20 k/w - - 0,15 k/w anzugsdrehmoment, elektr. anschlsse mnm terminal connection torque anschlsse / terminals m6 2,5 - 5,0 ausschaltenergie pro puls reverse recovery energy i f =300a, -di f /dt= 3000a/s e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c sperrverz?gerungsladung recovered charge i f =300a, -di f /dt= 3000a/s q r v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c v f forward voltage i f = 300a, v ge = 0v, t vj = 125c rckstromspitze peak reverse recovery current i f =300a, -di f /dt= 3000a/s i rm v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c charakteristische werte / characteristic values chopperdiode / chopper diode durchlassspannung i f = 300a, v ge = 0v, t vj = 25c mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innere isolation case, see appendix 3,0 340 g weight g gewicht comperative tracking index anzugsdrehmoment, mech. befestigung m mounting torque cti schraube m6 / screw m6 mechanische eigenschaften / mechanical properties 425 storage temperature geh?use, siehe anlage internal insulation 125 c - 0,01 - - - 150 -40 - k/w c - al 2 o 3 maximum junction temperature betriebstemperatur transistor wechelr. / transistor inverter inversdiode / free wheel diode innerer w?rmewiderstand; dc thermal resistance, junction to case; dc pro modul / per module paste = 1w/m*k / grease = 1w/m*k t stg lagertemperatur 6,0 nm c -40 - 125 thermische eigenschaften / thermal properties t vj max t vj op h?chstzul?ssige sperrschichttemp. operation temperature chopper diode / chopper diode r thck thermal resistance, case to heatsink bergangs w?rmewiderstand 3 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules ausgangskennlinie (typisch) i c = f(v ce ) output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) 0 40 80 120 160 200 240 280 320 360 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 40 80 120 160 200 240 280 320 360 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules bertragungscharakteristik (typisch) transfer characteristic (typical) i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) 0 40 80 120 160 200 240 280 320 360 400 5678910111213 v ge [v] i c [a] tvj = 25c tvj = 125c 0 50 100 150 200 250 300 350 400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] of free wheel diode 0 75 150 225 300 375 450 525 600 tvj = 25c tvj = 125c i f [a] of chopper diode 5 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g =3,6 ? , v ce =600v, t vj =125c e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =200a, v ce =600v, t vj =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) 0 10 20 30 40 50 60 70 80 0 40 80 120 160 200 240 280 320 360 400 i c [a] e [mj] eon eoff erec 0 10 20 30 40 50 60 70 80 90 100 0 4 8 12162024283236 r g [ ? ] e [mj] eon eoff erec 6 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules i [s] : chopper diode 6,499e-02 2,601e-02 2,364e-03 r i [k/kw] : chopper diode 63,07 75,68 8,53 2,364e-03 2,601e-02 1 i [s] : inversdiode 6,499e-02 2,601e-02 100,88 3,78 234 60,45 6,83 2,28 transienter w?rmewiderstand transient thermal impedance 6,499e-02 r i [k/kw] : igbt 50,44 i reverse bias safe operation area (rbsoa) 1,187e-05 sicherer arbeitsbereich (rbsoa) i [s] : igbt r i [k/kw] : inversdiode 11,36 83,98 1,187e-05 2,84 1,187e-05 v ge =15v, t vj =125c, r g =3,6 ? z thjc = f (t) 2,364e-03 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : inversdiode zth : diode chopper 0 50 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip ic,modul 7 (8) db_df200r12ke3_3.0 2002-10-07
technische information / technical information df200r12ke3 igbt-module igbt-modules 11 mm clearance distance luftstrecke 20 mm creepage distance kriechstrecke geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_df200r12ke3_3.0 2002-10-07
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