vishay siliconix si4800bdy document number: 72124 s-83039-rev. h, 29-dec-08 www.vishay.com 1 n-channel reduced q g , fast switching mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? high-efficient pwm optimized ? 100 % uis and r g tested product summary v ds (v) r ds(on) ( )i d (a) 30 0.0185 at v gs = 10 v 9 0.030 at v gs = 4.5 v 7 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: si4800bdy-t1-e3 (lead (pb)-free) SI4800BDY-T1-GE3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. surface mounted on fr4 board. b. t 10 s. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 25 continuous drain current (t j = 150 c) a, b t a = 25 c i d 96.5 a t a = 70 c 7.0 5.0 pulsed drain current (10 s pulse width) i dm 40 continuous source current (diode conduction) a, b i s 2.3 avalanche current l = 0.1 mh i as 15 single-pulse avalanche energy e as 11.25 mj maximum power dissipation a, b t a = 25 c p d 2.5 1.3 w t a = 70 c 1.6 0.8 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limits unit typ. max. maximum junction-to-ambient a t 10 s r thja 40 50 c/w steady state 70 95 maximum junction-to-foot (drain) steady state r thjf 24 30
www.vishay.com 2 document number: 72124 s-83039-rev. h, 29-dec-08 vishay siliconix si4800bdy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 1.8 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 9 a 0.0155 0.0185 v gs = 4.5 v, i d = 7 a 0.023 0.030 forward transconductance a g fs v ds = 15 v, i d = 9 a 16 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g v ds = 15 v, v gs = 5.0 v, i d = 9 a 8.7 13 nc gate-source charge q gs 1.5 gate-drain charge q gd 3.5 gate resistance r g 0.5 1.4 2.2 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 715 ns rise time t r 12 20 turn-off delay time t d(off) 32 50 fall time t f 14 25 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/s 30 60
document number: 72124 s-83039-rev. h, 29-dec-08 www.vishay.com 3 vishay siliconix si4800bdy typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 35 40 012345 v gs = 10 thru 5 v v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 4 v - on-resistance ( ) r ds(on) 0.000 0.008 0.016 0.024 0.032 0.040 0 5 10 15 20 25 30 i d - drain current (a) v gs = 10 v v gs = 4.5 v 0 1 2 3 4 5 6 0246810 v ds = 15 v i d = 9 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = - 55 c 125 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 200 400 600 800 1000 1200 048121620 v ds - drain-to-source voltage (v) c rss c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 9 a t j - junction temperature (c) r ds(on) - on-resistance (normalized)
www.vishay.com 4 document number: 72124 s-83039-rev. h, 29-dec-08 vishay siliconix si4800bdy typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c 50 1 v sd - source-to-drain voltage (v) - source current (a) i s 10 t j = 25 c - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 i d = 9 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 90 150 30 60 power (w) time (s) 120 110 10 -1 10 -2 10 -3 safe operating area, junction-to-ambient v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r ds(on)* t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms
document number: 72124 s-83039-rev. h, 29-dec-08 www.vishay.com 5 vishay siliconix si4800bdy typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72124 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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