j/sst201 series siliconix p-37995erev. d, 11-aug-94 1 n-channel jfets j201 sst201 j202 sst202 j204 sst204 product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j/sst201 0.3 to 1.5 40 0.5 0.2 j/sst202 0.8 to 4 40 1 0.9 j/sst204 0.3 to 2 25 0.5 0.2 features benefits applications low cutoff voltage: j201 <1.5 v high input impedance very low noise high gain: a v = 80 @ 20 a full performance from low voltage power supply: down to 1.5 v low signal loss/system error high system sensitivity high quality low-level signal amplification high-gain, low-noise amplifiers low-current, low-voltage battery-powered amplifiers infrared detector amplifiers ultra high input impedance pre-amplifiers description the j/sst201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. the j/sst201 is excellent for battery powered equipment and low current amplifiers. the j series, to-226 (to-92) plastic package, provides low cost, while the sst series, to-236 (sot-23) package, provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products in to-206aa (to-18) packaging, see the 2n4338/4339/4340/4341 data sheet. to-226aa (to-92) top view j201 j202 j204 d g s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst201 (p1)* sst202 (p2)* sst204 (p4)* *marking code for to-236 updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70233. applications information may also be obtained via faxback, request document #70595 and document #70599.
j/sst201 series 2 siliconix p-37995erev. d, 11-aug-94 absolute maximum ratings gate-drain, gate-source voltage 40 v . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 sec.) 300 c . . . . . . . . . . . . . . . storage temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c specifications a limits j/sst201 j/sst202 j/sst204 d parameter symbol test conditions typ b min max min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 40 40 25 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 10 na 0.3 1.5 0.8 4 0.3 2 saturation drain current c i dss v ds = 15 v, v gs = 0 v 0.2 1 0.9 4.5 0.2 3 ma gate reverse current i gss v gs = 20 v, v ds = 0 v 2 100 100 100 pa g a t e r everse c urren t i gss t a = 125 c 1 na gate operating current i g v dg = 10 v, i d = 0.1 ma 2 pa drain cutoff current i d(off) v ds = 15 v, v gs = 5 v 2 p a gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 15 v, v gs = 0 v f = 1 khz 0.5 1 0.5 ms common-source input capacitance c iss v ds = 15 v, v gs = 0 v f1mh 4.5 pf common-source reverse transfer capacitance c rss ds , gs f = 1 mhz 1.3 p f equivalent input noise voltage e n v ds = 10 v, v gs = 0 v f = 1 khz 6 nv M hz notes a. t a = 25 c unless otherwise noted. npa b. typical values are for design aid only, not guaranteed nor subject to production testing. nh c. pulse test: pw 300 s duty cycle 3%. d. see 2n/sst5484 series for j204 typical characteristic curves.
j/sst201 series siliconix p-37995erev. d, 11-aug-94 3 typical characteristics (25 c unless noted) 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na 01530 gate leakage current v dg drain-gate voltage (v) gate leakage (a) i g i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c i d = 100 a i d = 500 a i g @ i d = 500 a i d = 100 a 10 0 8 6 4 2 05 4 3 2 1 5 4 1 3 2 0 drain current and transconductance vs. gate-source cutoff voltage v gs(off) gate-source cutoff voltage (v) saturation drain current (ma) i dss g fs forward transconductance (ms) i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss 1500 035 4 2 1 1200 900 600 300 0 0.01 0.1 1 2 1.6 0.8 0.4 0 10 8 4 2 0 400 01216 420 360 160 80 0 2 01216 8 420 1.6 1.2 0.8 0.4 0 output characteristics on-resistance and output conductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current output characteristics i d drain current (ma) v gs(off) gate-source cutoff voltage (v) v ds drain-source voltage (v) v ds drain-source voltage (v) g fs forward transconductance (ms) drain current ( i d drain current (ma) i d t a = 55 c 125 c 0.2 v 0.4 v v gs = 0 v 0.6 v 0.9 v 0.1 v 0.3 v r ds @ i d = 100 a, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds g os 0.3 v 6 1.2 240 8 v gs(off) = 1.5 v v gs(off) = 0.7 v a) 25 c 0.5 v 1.2 v v ds = 10 v f = 1 khz v gs(off) = 1.5 v v gs = 0 v s) g output conductance ( r ds(on) drain-source on-resistance ( )
j/sst201 series 4 siliconix p-37995erev. d, 11-aug-94 typical characteristics (25 c unless noted) 2 0 1.2 1.6 2 0.8 0.4 1.6 1.2 0.8 0.4 0 transfer characteristics v gs gate-source voltage (v) drain current (ma) i d t a = 55 c 125 c 25 c v ds = 10 v v gs(off) = 1.5 v 500 0 0.3 0.2 0.1 0.4 0.5 400 300 200 100 0 transfer characteristics v gs gate-source voltage (v) t a = 55 c 125 c 25 c v ds = 10 v v gs(off) = 0.7 v drain current ( i d a) 0.1 1 0.01 4 1.2 2 1.6 0.8 0.4 0 3.2 2.4 1.6 0.8 0 0.01 0.1 1 200 160 120 80 40 0 2000 1600 1200 800 400 0 a v voltage gain i d drain current (ma) circuit voltage gain vs. drain current transconductance vs. gate-source voltage t a = 55 c 125 c g fs forward transconductance (ms) v gs gate-source voltage (v) on-resistance vs. drain current i d drain current (ma) 25 c v gs(off) = 0.7 v 1.5 v v gs(off) = 0.7 v 1.5 v 1.5 0 0.3 0.4 0.2 0.1 0.5 1.2 0.9 0.6 0.3 0 transconductance vs. gate-source voltage t a = 55 c 125 c g fs forward transconductance (ms) v gs gate-source voltage (v) 25 c v ds = 10 v f = 1 khz v gs(off) = 0.7 v v ds = 10 v f = 1 khz v gs(off) = 1.5 v a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d r ds(on) drain-source on-resistance ( )
j/sst201 series siliconix p-37995erev. d, 11-aug-94 5 typical characteristics (25 c unless noted) 10 0 12 16 20 8 4 8 6 4 2 0 5 0 12 20 16 8 4 4 3 2 1 0 common-source reverse feedback capacitance vs. gate-source voltage reverse feedback capacitance (pf) c rss v gs gate-source voltage (v) v ds = 0 v 10 v f = 1 mhz v gs gate-source voltage (v) common-source input capacitance vs. gate-source voltage input capacitance (pf) c iss v ds = 0 v 10 v f = 1 mhz 10 100 1 k 100 k 10 k 20 16 12 8 4 0 output conductance vs. drain current i d drain current (ma) t a = 55 c 125 c equivalent input noise voltage vs. frequency f frequency (hz) v ds = 10 v i d @ 100 a v gs = 0 v 3 2.4 1.8 0.8 0.4 0 0.01 0.1 1 25 c output characteristics 300 0 0.5 240 180 120 60 0 v ds drain-source voltage (v) 0.1 0.2 0.3 0.4 drain current (ma) i d output characteristics 1.0 0 1.0 0.8 0.6 0.4 0.2 0 v ds drain-source voltage (v) 0.2 0.4 0.6 0.8 v gs(off) = 0.7 v v gs = 0 v 0.1 0.2 0.3 0.4 0.5 v gs(off) = 1.5 v v gs = 0 v 0.3 0.6 0.9 1.2 v ds = 10 v f = 1 khz v gs(off) = 1.5 v s) g output conductance ( drain current ( i d a) nv e n / hz ) ( noise voltage
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