4-1 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos 4 general purpose amplifiers ! gainp/hbt gan hemt sige bi-cmos 1 9 6 5 7 8 4 3 2 pin 1 indicator rf out ground rf in ground nbt-168 microwave gainp/gaas discrete hbt dc to 12ghz ? active amplifier in vco circuit ? buffer amplifier ? gain stage the nbt-168 discrete hbt is ideal for low-co st amplifier and oscillator applicat ions up to 12ghz. low noise figure, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for cascaded amplifier designs. this device is also ideally suited for vco/buffer amplifier applications. the nbt-168 is packaged in a low-cost, surface-mount ceramic pack- age, providing ease of assembly for high-volume tape- and-reel requirements. it is available in either packaged or chip (nbt-168-d) form, wh ere its gold metallization is ideal for hybrid circuit designs. ? reliable, low-cost hbt design ? 26.0db gain@1.0ghz ? positive power supply operation ? 4-finger device for high-current capability ? low noise figure, 1.7db@2.0ghz nbt-168 microwave gainp/gaas discrete hbt dc to 12ghz NBT-168-T1 or -t3 tape & reel, 1000 or 3000 pieces (respectively) nbt-168-d nbt-168 chip form nbt-168-e fully assembled evaluation board 4 rev a1 020412 notes: 1. solder pads are coplanar to within 0.025 mm. 2. lid will be centered relative to frontside metallization with a tolerance of 0.13 mm. 3. mark to include two characters and dot to reference pin 1. ht 2.39 min 2.59 max lid id 1.70 min 1.91 max 2.94 min 3.28 max pin 1 indicator 1.00 min 1.50 max 0.025 min 0.125 max 0.38 nom pin 1 indicator rf out 0.98 min 1.02 max rf out ground 0.50 nom 0.50 nom all dimensions in millimeters 0.37 min 0.63 max ground package style: mpga, bowtie, 3x3, ceramic
4-2 nbt-168 rev a1 020412 4 general purpose amplifiers absolute maximum ratings parameter rating unit rf input power +10 dbm power dissipation 250 mw v cbo 8 v ceo 6 v ebo 1.5 v collector current 42 ma junction temperature 200 c operating temperature -45 to +85 c storage temperature -65 to +150 c exceeding any one or a combination of these limits may cause permanent damage. parameter specification unit condition min. typ. max. overall v c =+3.9v, i cc =25ma, z 0 =50 ? , t a =+25c collector cutoff current, i cbo 0.1 av cb =5.0v, i e =0 emitter cutoff current, i ebo 0.1 av eb =1.0v, i c =0 dc current gain, h fe 90 110 130 v ce =4.0v, i c =25ma current gain, h21 20 db v ce =4.0v, i c =25ma, 2ghz small signal power gain, s21 24 26 db f=1.0ghz noise figure, nf 1.7 db f=2.0ghz reverse isolation, s12 -30 -32 db f=1.0ghz mttf versus temperature @ v ce =3.9v, i cc =25ma case temperature 85 c junction temperature 112 c mttf >1,000,000 hours thermal resistance jc 277 c/w thermal resistance, at any temperature (in c/watt) can be estimated by the following equation: jc (c/watt)=277[t j (c)/112] caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
4-3 nbt-168 rev a1 020412 4 general purpose amplifiers pin function description interface schematic 1 emitter for best high frequency performance, this should be grounded. for best performance, keep traces physically short and connect immedi- ately to ground plane. 2 emitter same as pin 2. 3 emitter same as pin 2. 4base rf input pin. this pin is not internally dc blocked. a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. base bias network should provide 1.3v to the base and be a current source sufficient to supply the correct base current for the collector current set. 5 emitter same as pin 2. 6 emitter same as pin 2. 7 emitter same as pin 2. 8 collector collector bias. must provide collector voltage and current. biasing is accomplished with an external series resistor and choke inductor to v cc . the resistor is selected to set the dc current into this pin at the desired level. the resistor value is determined by the following equa- tion: care should be taken to ensure the current through the devices never exceeds the maximum datasheet setting. additionally, care should be taken to ensure the voltages between the collector and emitter (pins 3, 2 and 4), vce is typically 3.5v to 4.0v. because dc is present on this pin, a dc blocking capacitor, suitable for the frequency of opera- tion, should be used in most applications. the supply side of the bias network should also be well bypassed. 9 emitter same as pin 2. r v cc v c ? () i cc --------------------------- - = base collector emitter
4-4 nbt-168 rev a1 020412 4 general purpose amplifiers typical bias configuration application notes related to biasing circuit, device footprint, and thermal considerations are available on request. application notes die attach the die attach process mechanically attaches the die to the circuit substrate. in addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. wire bonding electrical connections to the chip are made through wire bonds. either wedge or ball bonding methods are acceptable practices for wire bonding. assembly procedure epoxy or eutectic die attach are both accept able attachment me thods. top and bo ttom metallization are gold. conductive silver-filled epoxies are recommended. this procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized ar ea of the substrate. a 150 c cure for 1 hour is ne cessary. recommended epoxy is ablebond 84-1lmi from ablestik. bonding temperature (wedge or ball) it is recommended that the heater block temperature be set to 160c10c. c block c block in out l choke (optional) r b1 v bb note: rf bypass circuitry omitted for simplicity. r b2 nbt-168 l choke (optional) r cc v cc v be v ce
4-5 nbt-168 rev a1 020412 4 general purpose amplifiers tape and reel dimensions all dimensions in millimeters a d b f t o s 330 mm (13") reel micro-x, mpga symbol size (mm) items size (inches) flange b t f 330 +0.25/-4.0 18.4 max 12.4 +2.0 diameter thickness space between flange 13.0 +0.079/-0.158 0.724 max 0.488 +0.08 hub o s a 102.0 ref 13.0 +0.5/-0.2 1.5 min outer diameter spindle hole diameter key slit width d 20.2 min key slit diameter 4.0 ref 0.512 +0.020/-0.008 0.059 min 0.795 min pin 1 user direction of feed ao = 3.6 mm bo = 3.6 mm ko = 1.7 mm notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. camber not to exceed 1 mm in 100 mm. 3. material: ps+c 4. ao and bo measured on a plane 0.3 mm above the bottom of the pocket. 5. ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. all dimensions in mm section a-a r0.3 max. ko 0.30 0.05 5.50 0.05 see note 6 12.00 0.30 1.75 a a r0.5 typ 1.5 min. bo ao 8.0 2.00 0.05 see note 6 4.0 see note 1 +0.1 -0.0 1.5
4-6 nbt-168 rev a1 020412 4 general purpose amplifiers collector current versus base to emitter voltage (nbt-168) -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 base to emitter voltage (vbe) collector current, i c (ma) current voltage characteristics (nbt-168) -0.005 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.000 1.000 2.000 3.000 4.000 5.000 6.000 v ce (v) i c (a) pout (dbm) gain (db) series3 series7 series4 series5 frequency versus noise figure (nbt-168) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 1.5 2.0 2.5 3.0 frequency (ghz) noise figure (db) insertion power gain versus frequency (nbt-168) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 0.1 1.0 10.0 100.0 frequency (ghz) insertion power gain (db)
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