j/sst174 series siliconix p-37653erev. d, 25-jul-94 1 p-channel jfets j174 sst174 j175 sst175 j176 sst176 j177 sst177 product summary part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j/sst174 5 to 10 85 10 25 j/sst175 3 to 6 125 10 25 j/sst176 1 to 4 250 10 25 j/sst177 0.8 to 2.25 300 10 25 features benefits applications low on-resistance: j174 <85 fast switchinget on : 25 ns low leakage: 10 pa low capacitance: 5 pf low insertion loss low error voltage high-speed analog circuit performance negligible aoff-error,o excellent accuracy good frequency response eliminates additional buffering analog switches choppers sample-and-hold normally aono switches current limiters description the j/sst174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. this series simplifies series-shunt switching applications when combined with the siliconix j/sst111 series. the to-226aa (to-92) plastic package provides a low-cost option, while the to-236 (sot-23) package provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). d s g to-236 (sot-23) top view 2 3 1 to-226aa (to-92) top view d s g 1 2 3 *marking code for to-236 sst174 (s4)* sst175 (s5)* sst176 (s6)* sst177 (s7)* j174 j175 j176 j177 updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70257. applications information may also be obtained via faxback, request document #70597.
j/sst174 series 2 siliconix p-37653erev. d, 25-jul-94 absolute maximum ratings gate-drain voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate-source voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 sec.) 300 c . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c specifications a for j/sst174 and j/sst175 limits j/sst174 j/sst175 parameter symbol test conditions typ b min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 45 30 30 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 10 na 5 10 3 6 v saturation drain current c i dss v ds = 15 v, v gs = 0 v 20 135 7 70 ma gate reverse current i gss v gs = 20 v, v ds = 0 v 0.01 1 1 g a t e r everse c urren t i gss t a = 125 c 5 gate operating current i g v dg = 15 v, i d = 1 ma 0.01 na drain cutoff current i d(off) v ds = 15 v, v gs = 10 v 0.01 1 1 d ra i n c u t o f f c urren t i d(off) t a = 125 c 5 drain-source on-resistance r ds(on) v gs = 0 v, v ds = 0.1 v 85 125 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 15 v, i d = 1 ma f1kh 4.5 ms common-source output conductance g os s f = 1 khz 20 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 85 125 common-source input capacitance c iss v ds = 0 v, v gs = 0 v, f = 1 mhz 20 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = 10 v f = 1 mhz 5 pf equivalent input noise voltage e n v dg = 10 v, i d = 1 ma f = 1 khz 20 nv M hz switching turn - on t ime t d(on) 10 turn - on t ime t r v gs(l) = 0 v, v gs(h) = 10 v s s it hi ci it 15 ns turn - of f time t d(off) gs( ) gs( ) see switching circuit 10 ns turn - of f t ime t f 20 notes a. t a = 25 c unless otherwise noted. pscia b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%.
j/sst174 series siliconix p-37653erev. d, 25-jul-94 3 specifications a for j/sst176 and j/sst177 limits j/sst176 j/sst177 parameter symbol test conditions typ b min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 45 30 30 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 10 na 1 4 0.8 2.25 v saturation drain current c i dss v ds = 15 v, v gs = 0 v 2 35 1.5 20 ma gate reverse current i gss v gs = 20 v, v ds = 0 v 0.01 1 1 g a t e r everse c urren t i gss t a = 125 c 5 gate operating current i g v dg = 15 v, i d = 1 ma 0.01 na drain cutoff current i d(off) v ds = 15 v, v gs = 10 v 0.01 1 1 d ra i n c u t o f f c urren t i d(off) t a = 125 c 5 drain-source on-resistance r ds(on) v gs = 0 v, v ds = 0.1 v 250 300 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 15 v, i d = 1 ma f = 1 khz 4.5 ms common-source output conductance g os f = 1 khz 20 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 250 300 common-source input capacitance c iss v ds = 0 v, v gs = 0 v, f = 1 mhz 20 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = 10 v f = 1 mhz 5 pf equivalent input noise voltage e n v dg = 10 v, i d = 1 ma f = 1 khz 20 nv M hz switching turn - on t ime t d(on) 10 t urn- o n t i me t r v gs(l) = 0 v, v gs(h) = 10 v s s it hi ci it 15 ns turn - of f time t d(off) gs( ) gs( ) see switching circuit 10 ns turn - of f t ime t f 20 notes a. t a = 25 c unless otherwise noted. pscia b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%.
j/sst174 series 4 siliconix p-37653erev. d, 25-jul-94 typical characteristics 200 06810 4 2 160 0 100 80 60 40 20 0 on-resistance and drain current vs. gate-source cutoff voltage saturation drain current (ma) i dss v gs(off) gate-source cutoff voltage (v) r ds @ i d = 1 ma, v gs = 0 v i dss @ v ds = 15 v, v gs = 0 v i dss r ds 120 80 40 18 0 15 12 9 6 3 6810 2 250 200 150 100 50 0 forward transconductance and output conductance vs. gate-source cutoff voltage g fs forward transconductance (ms) v gs(off) gate-source cutoff voltage (v) g fs and g os @ v ds = 15 v v gs = 0 v, f = 1 khz g fs g os 4 output characteristics drain current (ma) i d v ds drain-source voltage (v) 1.0 v 0.5 v 1.5 v 2.0 v 25 0 12 16 20 20 15 10 5 0 8 4 v gs(off) = 3 v v gs = 0 v output characteristics drain current (ma) i d v ds drain-source voltage (v) 1.5 v 2.0 v 2 0 0.3 0.4 0.5 1.6 1.2 0.8 0.4 0 0.2 0.1 v gs(off) = 3 v v gs = 0 v 250 200 150 100 50 0 1 10 100 on-resistance vs. drain current i d drain current (ma) t a = 25 c v gs(off) = 1.5 v 3 v 5 v 300 55 25 125 0 15 85 on-resistance vs. temperature t a temperature ( c) v gs(off) = 1.5 v 3 v 5 v i d = 1 ma r ds changes x 0.7%/ c 240 180 120 60 35 5 45 65 105 1.0 v 0.5 v r ds(on) drain-source on-resistance ( ) r ds(on) drain-source on-resistance ( ) r ds(on) drain-source on-resistance ( ) s) g output conductance (
j/sst174 series siliconix p-37653erev. d, 25-jul-94 5 typical characteristics (cont'd) 20 0 9 12 6 3 15 16 12 8 4 0 turn-on switching turn-off switching v gs(off) gate-source cutoff voltage (v) i d drain current (ma) t r approximately independent of i d v dd = 10 v, r g = 220 v gs(h) = 10 v, v gs(l) = 0 v t on @ i d = 10 ma t d(off) v gs(off) = 1.5 v t f v gs(off) = 1.5 v t on @ i d = 5 ma v dd = 10 v, v gs(h) = 10 v, v gs(l) = 0 v 50 05 40 20 10 0 30 1234 t r @ i d = 5 ma 5 v 5 v switching time (ns) switching time (ns) capacitance vs. gate-source voltage gate leakage current capacitance (pf) v gs gate-source voltage (v) v dg drain-gate voltage (v) v ds = 0 v f = 1 mhz c iss c rss 10 na 100 pa 100 na 1 na gate leakage i g 10 pa 1 pa 0.1 pa 30 01216 820 24 12 6 0 0 40 20 10 50 18 4 30 10 100 1 k 100 k 10 k 100 10 1 transfer characteristics noise voltage vs. frequency f frequency (hz) t a = 55 c 125 c v ds = 10 v i d = 0.1 ma 1 ma drain current (ma) i d v gs gate-source voltage (v) 40 0345 32 16 8 0 24 12 t a = 125 c t a = 25 c 10 ma i gss @ 125 c i gss @ 25 c 10 ma v ds = 15 v v gs(off) = 3 v 25 c 1 ma i d = 1 ma nv e n / hz ) ( noise voltage
7.5 k 51 1.2 k 51 51 1.2 k 0.1 f sampling scope v gg v dd r g v gs(h) v gs(l) r l j/sst174 series 6 siliconix p-37653erev. d, 25-jul-94 switching time test circuit 174 175 176 177 v dd 10 v 6 v 6 v 6 v v gg 20 v 12 v 8 v 5 v r l * 560 750 1800 5600 r g * 100 220 390 390 i d(on) 15 ma 7 ma 3 ma 1 ma *non-inductive input pulse sampling scope rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf see typical characteristics curves for changes.
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