5? features high current transfer ratio cny17f-1, 40-80% cny17f-2, 63-125% cny17f-3, 100-200% cny17f-4, 160-320% breakdown voltage, 5300 vac rms high collector-emitter voltage ? ceo =70 v no base terminal connection for improved common mode interface immunity field-effect stable by trios* long term stability industry standard dual-in-line package underwriters lab file #e52744 vde #0884, available with option 1 maximum ratings (t a =25 c) emitter reverse voltage ................................................ 6 v dc forward current .................................... 60 ma surge forward current (t 10 m s) ...................2.5 a total power dissipation ............................ 100 mw detector collector-emitter breakdown voltage ............. 70 v collector current ..........................................50 ma collector current (t 1 ms) ......................... 100 ma total power dissipation ............................ 150 mw package isolation test voltage (between emitter and detector referred to standard climate 23/50 din 50014) .................................... 5300 vac rms creepage .................................................... >7 mm clearance................................................... >7 mm isolation thickness between emitter and detector......................................... 3 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 ...................... 175 isolation resistance (v 10 =500 v) .................3 10 11 w storage temperature range ............?5 to +150 c ambient temperature range ...........?5 to +100 c junction temperature ................................... 100 c soldering temperature (max. 10 s, dip soldering: distance to seating plane 3 1.5 mm) .......... 260 c * trios?r ansparent io n sh ield v de description the cny17f is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in dip-6 package. the coupling device is suitable for signal transmission between two electrically separated circuits. the potential difference between the cir- cuits to be coupled is not allowed to exceed the maximum permissible reference voltages. in contrast to the cny17 series, the base terminal of the f type is not connected, resulting in a substantially improved common-mode interfer- ence immunity. characteristics (t a =25 c) symbol unit condition emitter forward voltage v f 1.25 ( 1.65) v i f =60ma breakdown voltage v br 33 3 6vi r =10 m a reverse current i r 0.01 ( 10) m av r =6 v capacitance c o 25 pf v r =0 v, f=1 mhz thermal resistance r thja 750 k/w detector capacitance c ce 5.2 pf v ce =5 v, f=1 mhz thermal resistance r thja 500 k/w package saturation voltage, collector-emitter v cesat 0.25 ( 0.4) v i f =10 ma i c =2.5 ma coupling capacitance c c 0.6 pf dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79 ) .150 (3.81 ) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) . 248 (6.30) . 256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 typ. .300 (7.62) .347 (8.82) 4 typ. 1 2 3 6 5 4 base collector emitter anode cathode nc cny17f series phototransistor no base connection optocoupler
5? cny17f figure 3. current transfer ratio versus diode current (t a =?5 c, v ce =5 v) i c /i f =f (i f ) figure 4. current transfer ratio versus diode current (t a =0 c, v ce =5 v) i c /i f =f (i f ) figure 5. current transfer ratio versus diode current (t a =25 c, v ce =5 v) i c /i f =f (i f ) current transfer ratio (i c /i f at v ce =5 v, 25 c) and collector-emitter leakage current by dash number figure 1. linear operation (without saturation) i f =10 ma, v cc =5 v, t a =25 c figure 2. switching operation (with saturation) -1 -2 -3 -4 unit i c /i f at v ce =5 v (i f =10 ma) 40?0 63-125 100?00 160?20 % i c /i f at v ce =5 v (i f =1 ma) 30 (>13) 45 (>22) 70 (>34) 90 (>56) % collector-emitter leakage current (v ce =10 v) (i ceo ) 2 ( 50) 2 ( 50) 5 ( 100) 5 ( 100) na load resistance r l 75 w turn-on time t on 3.0 m s rise time t r 2.0 m s turn-off time t off 2.3 m s fall time t f 2.0 m s cut-off frequency f co 250 khz -1 (i f =20 ma) -2 and -3 (i f =10 ma) -4 (i f =5 ma) turn-on time t on 3.0 4.2 6.0 m s rise time t r 2.0 3.0 4.6 m s turn-off time t off 18 23 25 m s fall time t f 11 14 15 m s r l =75 w v cc =5 v i c 47 w i f i f 1 k w v cc =5 v 47 w
5? cny17f figure 12. saturation voltage current and modulation cny17f-1 v cesat =f (i c ) (t a =25 c) figure 13. saturation voltage versus collector current and modulation depth cny17f-2 v cesat =f (i c ) (t a =25 c) figure 14. saturation voltage versus collector current and modulation depth cny17f-3 v cesat =f (i c ) (t a =25 c) figure 9. output characteristics cny17f-2, -3 (t a =25 c) ic=f(v ce ) figure 10. forward voltage v f =f(i f ) figure 11. collector emitter off-state current i ceo =f(v,t) (t a =75 c, i f =0) figure 6. current transfer ratio versus diode current (t a =50 c) v ce =5 v figure 7. current transfer ratio versus diode current (t a =75 c) v ce =5 v figure 8. current transfer ratio versus temperature (i f =10 ma, v ce =5 v) i c /i f =f (t)
5? cny17f figure 19. transistor capacitance c=f(v o )(t a =25 c, f=1 mhz) figure 17. permissible power dissipa- tion transistor and diode p tot =f(t a ) figure 18. permissible forward current diode i f =f(t a ) figure 15. saturation voltage versus collector current and modulation depth cny17f-4 v cesat =f (i c ) (t a =25 c) figure 16. permissible pulse load d=parameter, t a =25 c, i f =f(t p )
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