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| revisions ltr description date (yr-mo-da) approved a change package designation and add case outline figure. - jak 00-04-11 monica l. poelking b add device type 02. - jak 00-05-30 monica l. poelking c correct supply voltage nomenclature to comply with device characterization. correct dimension a minimum values for case outline x in table of figure 1. update boilerplate to latest mil-prf-38535 requirements. - cfs 01-03-06 thomas m. hess d add device type 03. - cfs 02-05-10 thomas m. hess rev d d d d d d d d d sheet 35 36 37 38 39 40 41 42 43 rev d d d d d d d d d d d d d d d d d d d d sheet 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 rev status rev d d d d d d d d d d d d d d of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by charles f. saffle, jr. defense supply center columbus standard microcircuit drawing checked by charles f. saffle, jr. columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by monica l. poelking microcircuit, digital, radiation hardened, advanced cmos, schmitt 16-bit bidirectional and agencies of the department of defense drawing approval date 99-05-10 multi-purpose transceiver with three-state outputs, monolithic silicon amsc n/a revision level d size a cage code 67268 5962-98580 sheet 1 of 43 dscc form 2233 apr 97 5962-e407-02 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class le vels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radi ation hardness assurance (rha) leve ls are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 r 98580 01 v x x federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices m eet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device cl ass m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54acs164245s radiation hardened, schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs and cold sparing 02 54acs164245s 1 / radiation hardened, schmitt 16-bit bidirectional multi-purpose transceiver wi th three-state outputs, cold sparing, and extended voltage range 03 54acs164245s 1 / 2 / radiation hardened, schmitt 16-bit bidirectional multi-purpose transceiver wi th three-state outputs, cold sparing, extended voltage range, and extended industrial temperature range of -40 c to +125 c 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the r equirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x see figure 1 48 flat pack _______ 1 / device types 02 and 03 have an extended voltage range. 2 / device type 03 has an extended industrial temperature range of -40 c to +125 c. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 3 dscc form 2234 apr 97 1.2.5 lead finish . the lead finish is as specified in mil-pr f-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage ranges (v dd ): 5.0 v supply (v dd1 ) ........................................................................................... -0.3 v dc to +6.0 v dc 3.3 v supply (v dd2 ) ........................................................................................... -0.3 v dc to +6.0 v dc dc input voltage range (v in ): 4 / a port ................................................................................................................. -0.3 v dc to v dd1 + 0.3 v dc b port ................................................................................................................. -0.3 v dc to v dd1 + 0.3 v dc dc output voltage range (v out ): a port ................................................................................................................. -0.3 v dc to v dd1 + 0.3 v dc b port ................................................................................................................. -0.3 v dc to v dd1 + 0.3 v dc dc input current, any one input (i in ): a port ................................................................................................................. 10 ma b port ................................................................................................................. 10 ma storage temperature range (t stg ) ....................................................................... -65 c to +150 c lead temperature (solderi ng, 10 seconds ).......................................................... +300 c thermal resistance, junction-to-case ( jc ) .......................................................... see mil-std-1835 junction temperature (t j ) .................................................................................... +175 c maximum power dissipation at t a = +55 c (in still air) (p d )................................. 1.0 w 5 / 1.4 recommended operating conditions . 2 / 3 / 6 / supply voltage range (v dd ): (v dd1 ) device type 01 ........................................................................................ +4.5 v dc to +5.5 v dc or 3.13 v dc to 3.6 v dc (v dd1 ) device types 02 and 03...........................................................................+4.5 v dc to +5.5 v dc or 3.0 v dc to 3.6 v dc (v dd2 ) device type 01 ........................................................................................ +3.13 v dc to +3.6 v d c or +4.5 v dc to +5.5 v dc (v dd2 ) device types 02 and 03........................................................................... +3.00 v dc to +3.6 v dc or +4.5 v dc to +5.5 v dc input voltage range (v in )...................................................................................... +0.0 v dc to v dd1 output voltage range (v out ) ................................................................................ +0.0 v dc to v dd1 case operating temperature range (t c ): (device types 01 and 02).................... -55 c to +125 c (device type 03).................................. -40 c to +125 c maximum input rise and fall time at v dd1 = 4.5 v (t r , t f ) ....................................... 1 ns/v 7 / 1.5 radiation features . 8 / maximum total dose available (dose ra te = 50 - 300 rads (si)/s) ........................ 1 x 10 5 rads (si) single event phenomenon (sep) effective linear energy threshold (let). no upset s (see 4.4.4.4).......................................................... > 80 mev/(mg/cm 2 ) single event latch- up ........................................................................................... > 120 mev/(mg/ cm 2 ) _______ 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise noted, all voltages are referenced to v ss . 3 / the limits for the parameters specified herein shall apply over the full specified v dd range and case temperature range of -55 c to +125 c for device types 01 and 02, -40 c to +125 c for device type 03. 4 / for cold spare mode (v dd = v ss ), vin may be ?0.3v to the maximum recommended operating v dd + 0.3v. 5 / the maximum package power dissipation is ca lculated using a junction temperature of 150 c and a board trace length of 750 mils 6 / unused inputs must be held high or lo w to prevent them from floating. 7 / derate system propagation delays by difference in rise time to switch point for t r or t f > 1 ns/v. 8 / radiation testing is performed on the standard evaluation circuit. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the i ssues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specifications department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the requirements for microcircu it die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 2. 3.2.3 truth table . the truth table shall be as specified on figure 3. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 4. 3.2.5 switching waveforms and test circuit . the switching waveforms and test circuit shall be as specified on figure 5. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 5 dscc form 2234 apr 97 3.2.6 irradiation test connections . the irradiation test connections shall be as specified in table iii. 3.2.7 radiation exposure circuit . the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 electrical performanc e characteristics and postirr adiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as s pecified in table i and shall apply over th e full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in tabl e iia. the electrical tests for each subgroup are defined in table ia. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device cl asses q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the require ments of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided wi th each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable r equired documentation. offshor e documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 37 (see mil-prf-38535, appendix a). standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 6 dscc form 2234 apr 97 table ia. electrical per formance characteristics . test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max schmitt trigger positive going v t+ a port = 3.3v 01 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.7v dd2 v threshold m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.7v dd2 a port = 3.3v 02, 03 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.7v dd2 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.7v dd2 a port = 5.0v all v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.7v dd2 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 1 0.7v dd2 b port = 3.3v 01 v dd1 =3.13 v and 3.6 v, 1, 2, 3 0.7v dd1 m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.7v dd1 b port = 3.3v 02, 03 v dd1 =3.0 v and 3.6 v, 1, 2, 3 0.7v dd1 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.7v dd1 b port = 5.0v 01 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.7v dd1 m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.7v dd1 b port = 5.0v 02, 03 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.7v dd1 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.7v dd1 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 7 dscc form 2234 apr 97 table ia. electrical per formance characteristics ? continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max schmitt trigger negative going v t- a port = 3.3v 01 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.3v dd2 v threshold m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.3v dd2 a port = 3.3v 02, 03 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.3v dd2 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.3v dd2 a port = 5.0v all v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.3v dd2 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 1 0.3v dd2 b port = 3.3v 01 v dd1 =3.13 v and 3.6 v, 1, 2, 3 0.3v dd1 m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.3v dd1 b port = 3.3v 02, 03 v dd1 =3.0 v and 3.6 v, 1, 2, 3 0.3v dd1 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.3v dd1 b port = 5.0v 01 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.3v dd1 m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.3v dd1 b port = 5.0v 02, 03 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.3v dd1 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.3v dd1 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 8 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max schmitt trigger range of v h 6 / a port = 3.3v 01 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.4 v hysteresis m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.4 a port = 3.3v 02, 03 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.4 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.4 a port = 5.0v all v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.6 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 1 0.6 b port = 3.3v 01 v dd1 =3.13 v and 3.6 v, 1, 2, 3 0.4 m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.4 b port = 3.3v 02, 03 v dd1 =3.0 v and 3.6 v, 1, 2, 3 0.4 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.4 b port = 5.0v 01 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.6 m, d, p, l, r 5 / 01 v dd2 = 3.13 v and 3.6 v 1 0.6 b port = 5.0v 02, 03 v dd1 =4.5 v and 5.5 v, 1, 2, 3 0.6 m, d, p, l, r 5 / 02, 03 v dd2 = 3.0 v and 3.6 v 1 0.6 input current high i ih 7 / a port = 3.3v for input under test, v in = v dd2 other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 3.6 v 1, 2, 3 3.0 a m, d, p, l, r 5 / all 1 3.0 a port = 5.0v for input under test, v in = v dd2 other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 5.5 v 1, 2, 3 3.0 m, d, p, l, r 5 / all 1 3.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 9 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max input current high i ih 7 / b port = 3.3v for input under test, v in = v dd1 other inputs, v in = v dd1 or v ss all v dd1 =3.6 v, v dd2 = 3.6 v 1, 2, 3 3.0 a m, d, p, l, r 5 / all 1 3.0 b port = 5.0v for input under test, v in = v dd1 other inputs, v in = v dd1 or v ss all v dd1 =5.5 v, v dd2 = 3.6 v 1, 2, 3 3.0 m, d, p, l, r 5 / all 1 3.0 input current low i il 7 / a port = 3.3v for input under test, v in = v ss other inputs, v in = v dd2 or v ss all v dd1 =5.5 v, v dd2 = 3.6 v 1, 2, 3 -1.0 a m, d, p, l, r 5 / all 1 -1.0 a port = 5.0v for input under test, v in = v ss other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 5.5 v 1, 2, 3 -1.0 m, d, p, l, r 5 / all 1 -1.0 b port = 3.3v for input under test, v in = v ss other inputs, v in = v dd1 or v ss all v dd1 = 3.6 v, v dd2 = 3.6 v 1, 2, 3 -1.0 m, d, p, l, r 5 / all 1 -1.0 b port = 5.0v for input under test, v in = v ss other inputs, v in = v dd1 or v ss all v dd1 = 5.5 v, v dd2 = 3.6 v 1, 2, 3 -1.0 m, d, p, l, r 5 / all 1 -1.0 input current cold spare i cs a port = b port = 5.5 v = v in dirn = 5.5v, oen = 5.5v all v dd1 = 0.0 v, v dd2 = 0.0 v 1, 2, 3 -1.0 5.0 a mode m, d, p, l, r 5 / all 1 -1.0 5.0 a port = b port = 5.5 v = v in dirn = 0.0v, oen = 5.5v all v dd1 = 0.0 v, v dd2 = 0.0 v 1, 2, 3 -1.0 5.0 m, d, p, l, r 5 / all 1 -1.0 5.0 a port = b port = 5.5 v = v in dirn = 5.5v, oen = 0.0v all v dd1 = 0.0 v, v dd2 = 0.0 v 1, 2, 3 -1.0 5.0 m, d, p, l, r 5 / all 1 -1.0 5.0 a port = b port = 5.5 v = v in dirn = 0.0v, oen = 0.0v all v dd1 = 0.0 v, v dd2 = 0.0 v 1, 2, 3 -1.0 5.0 m, d, p, l, r 5 / all 1 -1.0 5.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 10 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max low level output voltage v ol1 8 / a port = 3.3v, i ol = 8 ma for all inputs affecting output under test, v in = v dd2 or v ss 01 v dd1 =4.5 v, v dd2 = 3.13 v 1, 2, 3 0.5 v m, d, p, l, r 5 / 01 1 0.5 a port = 3.3v, i ol = 8 ma for all inputs affecting output under test, v in = v dd2 or v ss 02, 03 v dd1 =4.5 v, v dd2 = 3.0 v 1, 2, 3 0.5 m, d, p, l, r 5 / 02, 03 1 0.5 a port = 5.0v, i ol = 8 ma for all inputs affecting output under test, v in = v dd2 or v ss all v dd1 =4.5 v, v dd2 = 4.5 v 1, 2, 3 0.4 m, d, p, l, r 5 / all 1 0.4 b port = 3.3v, i ol = 8 ma for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 =3.13 v, v dd2 = 3.13 v 1, 2, 3 0.5 m, d, p, l, r 5 / 01 1 0.5 b port = 3.3v, i ol = 8 ma for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 =3.0 v, v dd2 = 3.0 v 1, 2, 3 0.5 m, d, p, l, r 5 / 02, 03 1 0.5 b port = 5.0v, i ol = 8 ma for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 0.4 m, d, p, l, r 5 / 01 1 0.4 b port = 5.0v, i ol = 8 ma for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 0.4 m, d, p, l, r 5 / 02, 03 1 0.4 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 11 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max low level output voltage v ol2 9 / a port = 3.3v, i ol = 100 a for all inputs affecting output under test, v in = v dd2 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 0.2 v m, d, p, l, r 5 / 01 1 0.2 a port = 3.3v, i ol = 100 a for all inputs affecting output under test, v in = v dd2 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 0.2 m, d, p, l, r 5 / 02, 03 1 0.2 a port = 5.0v, i ol = 100 a for all inputs affecting output under test, v in = v dd2 or v ss all v dd1 = 4.5 v, v dd2 = 4.5 v 1, 2, 3 0.2 m, d, p, l, r 5 / all 1 0.2 b port = 3.3v, i ol = 100 a for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 = 3.13 v, v dd2 = 3.13 v 1, 2, 3 0.2 m, d, p, l, r 5 / 01 1 0.2 b port = 3.3v, i ol = 100 a for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 = 3.0 v, v dd2 = 3.0 v 1, 2, 3 0.2 m, d, p, l, r 5 / 02, 03 1 0.2 b port = 5.0v, i ol = 100 a for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 0.2 m, d, p, l, r 5 / 01 1 0.2 b port = 5.0v, i ol = 100 a for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 0.2 m, d, p, l, r 5 / 02, 03 1 0.2 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 12 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max high level output voltage v oh1 8 / a port = 3.3v, i oh = -8 ma for all inputs affecting output under test, v in = v dd2 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 v dd2 ? 0.9v v m, d, p, l, r 5 / 01 1 v dd2 ? 0.9v a port = 3.3v, i oh = -8 ma for all inputs affecting output under test, v in = v dd2 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 v dd2 ? 0.9v m, d, p, l, r 5 / 02, 03 1 v dd2 ? 0.9v a port = 5.0v, i oh = -8 ma for all inputs affecting output under test, v in = v dd2 or v ss all v dd1 = 4.5 v, v dd2 = 4.5 v 1, 2, 3 v dd2 ? 0.7v m, d, p, l, r 5 / all 1 v dd2 ? 0.7v b port = 3.3v, i oh = -8 ma for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 =3.13 v, v dd2 = 3.13 v 1, 2, 3 v dd1 ? 0.9v m, d, p, l, r 5 / 01 1 v dd1 ? 0.9v b port = 3.3v, i oh = -8 ma for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 =3.0 v, v dd2 = 3.0 v 1, 2, 3 v dd1 ? 0.9v m, d, p, l, r 5 / 02, 03 1 v dd1 ? 0.9v b port = 5.0v, i oh = -8 ma for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 v dd1 ? 0.7v m, d, p, l, r 5 / 01 1 v dd1 ? 0.7v b port = 5.0v, i oh = -8 ma for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 v dd1 ? 0.7v m, d, p, l, r 5 / 02, 03 1 v dd1 ? 0.7v see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 13 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max high level output voltage v oh2 9 / a port = 3.3v, i oh = -100 a for all inputs affecting output under test, v in = v dd2 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 v dd2 - 0.2v v m, d, p, l, r 5 / 01 1 v dd2 - 0.2v a port = 3.3v, i oh = -100 a for all inputs affecting output under test, v in = v dd2 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 v dd2 - 0.2v m, d, p, l, r 5 / 02, 03 1 v dd2 - 0.2v a port = 5.0v, i oh = -100 a for all inputs affecting output under test, v in = v dd2 or v ss all v dd1 = 4.5 v, v dd2 = 4.5 v 1, 2, 3 v dd2 - 0.2v m, d, p, l, r 5 / all 1 v dd2 - 0.2v b port = 3.3v, i oh = -100 a for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 =3.13 v, v dd2 = 3.13 v 1, 2, 3 v dd1 - 0.2v m, d, p, l, r 5 / 01 1 v dd1 - 0.2v b port = 3.3v, i oh = -100 a for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 =3.0 v, v dd2 = 3.0 v 1, 2, 3 v dd1 - 0.2v m, d, p, l, r 5 / 02, 03 1 v dd1 - 0.2v b port = 5.0v, i oh = -100 a for all inputs affecting output under test, v in = v dd1 or v ss 01 v dd1 = 4.5 v, v dd2 = 3.13 v 1, 2, 3 v dd1 - 0.2v m, d, p, l, r 5 / 01 1 v dd1 - 0.2v b port = 5.0v, i oh = -100 a for all inputs affecting output under test, v in = v dd1 or v ss 02, 03 v dd1 = 4.5 v, v dd2 = 3.0 v 1, 2, 3 v dd1 - 0.2v m, d, p, l, r 5 / 02, 03 1 v dd1 - 0.2v see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 14 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max output current (sink) i ol 10 / 01 v dd1 = 4.5 v, v dd2 =3.13 v 1, 2, 3 8.0 a port = 3.3v v in = v ss v ol = 0.5 v 02, 03 v dd1 = 4.5 v, v dd2 =3.0 v 1, 2, 3 8.0 a port = 5.0v v in = v ss v ol = 0.4 v all v dd1 = 4.5 v, v dd2 = 4.5 v 1, 2, 3 8.0 01 v dd1 =3.13v, v dd2 = 3.13v 1, 2, 3 8.0 b port = 3.3v v in = v ss v ol = 0.5 v 02, 03 v dd1 =3.0v, v dd2 = 3.0v 1, 2, 3 8.0 01 v dd1 = 4.5 v, v dd2 =3.13 v 1, 2, 3 8.0 b port = 5.0v v in = v ss v ol = 0.4 v 02, 03 v dd1 = 4.5 v, v dd2 =3.0 v 1, 2, 3 8.0 ma output current (source) i oh 10 / 01 v dd1 = 4.5 v, v dd2 =3.13 v 1, 2, 3 -8.0 a port = 3.3v v in = v dd2 or v ss v oh = v dd2 - 0.9 v 02, 03 v dd1 = 4.5 v, v dd2 =3.0 v 1, 2, 3 -8.0 a port = 5.0v v in = v dd2 or v ss v oh = v dd2 - 0.7 v all v dd1 = 4.5 v, v dd2 = 4.5 v 1, 2, 3 -8.0 01 v dd1 =3.13v, v dd2 = 3.13v 1, 2, 3 -8.0 b port = 3.3v v in = v dd1 or v ss v oh = v dd1 - 0.9 v 02, 03 v dd1 =3.0v, v dd2 = 3.0v 1, 2, 3 -8.0 01 v dd1 = 4.5 v, v dd2 = 3.13v 1, 2, 3 -8.0 b port = 5.0v v in = v dd1 or v ss v oh = v dd1 - 0.7 v 02, 03 v dd1 = 4.5 v, v dd2 = 3.0v 1, 2, 3 -8.0 ma see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 15 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max three-state output leakage i ozh 7 / a port = 3.3v for input under test, v in = v dd2 other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 3.6 v 1, 2, 3 3.0 a current high v out = v dd2 m, d, p, l, r 5 / all 1 3.0 a port = 5.0v for input under test, v in = v dd2 other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 5.5 v 1, 2, 3 3.0 v out = v dd2 m, d, p, l, r 5 / all 1 3.0 b port = 3.3v for input under test, v in = v dd1 other inputs, v in = v dd1 or v ss all v dd1 = 3.6 v, v dd2 = 3.6 v 1, 2, 3 3.0 v out = v dd1 m, d, p, l, r 5 / all 1 3.0 b port = 5.0v for input under test, v in = v dd1 other inputs, v in = v dd1 or v ss all v dd1 = 5.5 v, v dd2 = 3.6 v 1, 2, 3 3.0 v out = v dd1 m, d, p, l, r 5 / all 1 3.0 three-state output leakage i ozl 7 / a port = 3.3v for input under test, v in = v ss other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 3.6 v 1, 2, 3 -1.0 a current low v out = v ss m, d, p, l, r 5 / all 1 -1.0 a port = 5.0v for input under test, v in = v ss other inputs, v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 5.5 v 1, 2, 3 -1.0 v out = v ss m, d, p, l, r 5 / all 1 -1.0 b port = 3.3v for input under test, v in = v ss other inputs, v in = v dd1 or v ss all v dd1 = 3.6 v, v dd2 = 3.6 v 1, 2, 3 -1.0 v out = v ss m, d, p, l, r 5 / all 1 -1.0 b port = 5.0v for input under test, v in = v ss other inputs, v in = v dd1 or v ss all v dd1 = 5.5 v, v dd2 = 3.6 v 1, 2, 3 -1.0 v out = v ss m, d, p, l, r 5 / all 1 -1.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 16 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max short circuit output current i os 11 / 12 / a port = 3.3v v out = v dd2 or v ss 01 v dd1 = 4.5 v and 5.5 v, v dd2 =3.13 v and 3.6 v 1, 2, 3 -100.0 100.0 ma a port = 3.3v v out = v dd2 or v ss 02, 03 v dd1 = 4.5 v and 5.5 v, v dd2 =3.0 v and 3.6 v 1, 2, 3 -100.0 100.0 a port = 5.0v v out = v dd2 or v ss all v dd1 = 4.5 v and 5.5 v, v dd2 = 4.5 v and 5.5 v 1, 2, 3 -200.0 200.0 b port = 3.3v v out = v dd1 or v ss 01 v dd1 =3.13 v and 3.6 v, v dd2 =3.13 v and 3.6 v 1, 2, 3 -100.0 100.0 b port = 3.3v v out = v dd1 or v ss 02, 03 v dd1 =3.0 v and 3.6 v, v dd2 =3.0v and 3.6 v 1, 2, 3 -100.0 100.0 b port = 5.0v v out = v dd1 or v ss 01 v dd1 = 4.5 v and 5.5 v, v dd2 =3.13 v and 3.6 v 1, 2, 3 -200.0 200.0 b port = 5.0v v out = v dd1 or v ss 02, 03 v dd1 = 4.5 v and 5.5 v, v dd2 =3.0 v and 3.6 v 1, 2, 3 -200.0 200.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 17 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max power dissipation p d 11 / 13 / 14 / a port = 3.3v c l = 50 pf, per switching output 01 v dd1 = 4.5 v and 5.5 v, v dd2 =3.13 v and 3.6 v 4, 5, 6 1.5 mw/ mhz a port = 3.3v c l = 50 pf, per switching output 02, 03 v dd1 = 4.5 v and 5.5 v, v dd2 =3.0 v and 3.6 v 4, 5, 6 1.5 a port = 5.0v c l = 50 pf, per switching output all v dd1 = 4.5 v and 5.5 v, v dd2 = 4.5 v and 5.5 v 4, 5, 6 2.0 b port = 3.3v c l = 50 pf, per switching output 01 v dd1 =3.13 v and 3.6 v, v dd2 =3.13 v and 3.6 v 4, 5, 6 1.5 b port = 3.3v c l = 50 pf, per switching output 02, 03 v dd1 =3.0 v and 3.6 v, v dd2 =3.0 v and 3.6 v 4, 5, 6 1.5 b port = 5.0v c l = 50 pf, per switching output 01 v dd1 = 4.5 v and 5.5 v, v dd2 =3.13 v and 3.6 v 4, 5, 6 2.0 b port = 5.0v c l = 50 pf, per switching output 02, 03 v dd1 = 4.5 v and 5.5 v, v dd2 =3.0 v and 3.6 v 4, 5, 6 2.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 18 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max quiescent supply current i ddq a port = 5.0v v in = v dd2 or v ss all v dd1 = 5.5 v, v dd2 = 5.5 v 1 10.0 a 2, 3 100.0 m, d, p, l, r 5 / all 1 500.0 b port = 5.0v v in = v dd1 or v ss all v dd1 = 5.5 v, v dd2 = 5.5 v 1 10.0 2, 3 100.0 m, d, p, l, r 5 / all 1 500.0 input capacitance c in f = 1 mhz, see 4.4.1c all v dd1 , v dd2 = 0.0 v 4 15 pf output capacitance c out f = 1 mhz, see 4.4.1c all v dd1 , v dd2 = 0.0 v 4 15 pf functional test 15 / v ih = 0.7v dd , v il = 0.3v dd see 4.4.1b 01 v dd1 = 4.5 v and 5.5 v, 7, 8 l h m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 7 l h v ih = 0.7v dd , v il = 0.3v dd see 4.4.1b 02, 03 v dd1 = 4.5 v and 5.5 v, 7, 8 l h m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 7 l h see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 19 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max propagation delay time, t plh 16 / b port = 5v, a port = 3.3v c l = 50 pf, see figure 4 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 ns data to bus (active low) m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 b port = 5v, a port = 3.3v c l = 50 pf, see figure 4 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 a port = b port, 5v operation c l = 50 pf, see figure 4 all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 15.0 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 15.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf, see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 a port = b port 3.3v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf, see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 propagation delay time, t phl 16 / b port = 5v, a port = 3.3v c l = 50 pf 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 ns data to bus (active high) see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 b port = 5v, a port = 3.3v c l = 50 pf 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 a port = b port, 5v operation c l = 50 pf all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 15.0 see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 15.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf, see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf, see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 20 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max propagation delay time, t pzl 16 / b port = 5v, a port = 3.3v c l = 50 pf 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 ns output enable, oen to bus see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 (active low) b port = 5v, a port = 3.3v c l = 50 pf 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 a port = b port, 5v operation c l = 50 pf, see figure 4 all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 12.0 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 12.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 a port = b port 3.3v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 propagation delay time, t pzh 16 / b port = 5v, a port = 3.3v c l = 50 pf 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 ns output enable, oen to bus see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 (active high) b port = 5v, a port = 3.3v c l = 50 pf 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 a port = b port, 5v operation c l = 50 pf all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 12.0 see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 12.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 21 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max propagation delay time, t plz 16 / b port = 5v a port = 3.3v 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 ns output disable, oen to bus c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 (high impedance) b port = 5v a port = 3.3v 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 a port = b port 5v operation all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 15.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 15.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 propagation delay time, t phz 16 / b port = 5v a port = 3.3v 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 ns output disable, oen to bus c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 (high impedance) b port = 5v a port = 3.3v 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 a port = b port 5v operation all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 15.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 15.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 22 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroups limits 4 / unit unless otherwise specified min max propagation delay time, t pzl 17 / b port = 5v a port = 3.3v 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 ns output enable, dirn to bus c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 (active low) b port = 5v a port = 3.3v 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 a port = b port 5v operation all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 12.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 12.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 propagation delay time, t pzh 17 / b port = 5v a port = 3.3v 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 ns output enable, dirn to bus c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 (active high) b port = 5v a port = 3.3v 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 a port = b port 5v operation all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 12.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 12.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 18.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 18.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 18.0 see footnotes at end of table. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 23 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. test symbol test conditions 1 / 2 / -55 c t c +125 c for 5.0 v supply: +4.5 v v dd1 +5.5 v for 3.3 v supply: +3.0 v v dd2 +3.6 v device type v dd 3/ group a subgroup s limits 4 / unit unless otherwise specified min max propagation delay time, t plz 17 / b port = 5v a port = 3.3v 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 ns output disable, dirn to bus c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 (high impedance) b port = 5v a port = 3.3v 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 a port = b port 5v operation all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 15.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 15.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 propagation delay time, t phz 17 / b port = 5v a port = 3.3v 01 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 ns output disable, dirn to bus c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 (high impedance) b port = 5v a port = 3.3v 02, 03 v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 a port = b port 5v operation all v dd1 = 4.5 v and 5.5 v, 9, 10, 11 1.0 15.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / all v dd2 = 4.5 v and 5.5 v 9 1.0 15.0 a port = b port 3.3 v operation 01 v dd1 =3.13 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 01 v dd2 =3.13 v and 3.6 v 9 1.0 20.0 a port = b port 3.3 v operation 02, 03 v dd1 =3.0 v and 3.6 v, 9, 10, 11 1.0 20.0 c l = 50 pf see figure 4 m, d, p, l, r 5 / 02, 03 v dd2 =3.0 v and 3.6 v 9 1.0 20.0 see footnotes on next page. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 24 dscc form 2234 apr 97 table ia. electrical per formance characteristics - continued. 1 / each input/output, as applicable, shall be tested at the specifi ed temperature, for the specified limits, to the tests in tab le i herein. output terminals not designated shall be high leve l logic, low level logic, or open, except for all i dd tests, where the output terminals shall be open. when performing these tests, the current meter shall be placed in the circuit such that all current flows through the meter. for input terminals not designated, v in = v ss or v in 3.13 v for device type 01 and 3.0 v for device types 02 and 03. 2 / temperature range for device type 03 is -40 c to +125 c. 2 / this device requires both v dd1 and v dd2 power supplies for operation. the power supply will be indicated followed by the voltage to which the power supply is set to for the given test 3 / for negative and positive voltage and current values, the sign designates the potential difference in reference to v ss and the direction of current flow, respectively; and the absolute val ue of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 4 / devices supplied to this drawing meet all levels m, d, p, l, and r of irradiation. however, these devices are only tested a t the "r" level. pre and post irradiation values are identical unless otherwise specified in table ia. when performing post irradiation electrical measur ements for any rha level, t a = +25 c. 5 / guaranteed; tested on a sample of pins per device at 3.6 v, 4.5 v, and 5.5 v. tested on all pins at 3.13 v for device type 01 and 3.0 v for device types 02 and 03. 6 / guaranteed; tested on a sample of pins at 3.6 v. tested on all pins at 5.5 v. 7 / guaranteed; tested on a sample of pins at 3.13 v for device type 01 and 3.0 v for device types 02 and 03. tested on all pins at 4.5 v. 8 / guaranteed; tested on a sample of pins at 3.13 v for device type 01 and 3.0 v for device types 02 and 03, and 4.5 v. 9 / guaranteed based on characterization data but not tested. 10 / this parameter is supplied as des ign limit but not guaranteed or tested. 11 / no more than one output should be shorted at a time for a maximum duration of one second. 12 / power does not include power contribution of any cmos output sink current. 13 / power dissipation specified per switching output. 14 / tests shall be performed in sequence, attributes data only. functional tests shall include the truth table and other logic patterns used for fault detection. the test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. all possible input to output logic pattern s per function shall be guaranteed, if not tested, to the tru th table in figure 2 herein. functional tests shall be perform ed in sequence as approved by the qualifying activity on qualified devices. functional tests are conducted in accordance with mil-std-883 with the following input test conditions: v ih = v ih (min + 20%, - 0%); v il = v il (max + 0%, - 50%), as specif ied herein, for ttl, cmos, or schmitt compatible inputs. devices are guaranteed to v ih (min) and v il (max). 15 / for propagation delay tests, all paths must be tested. 16 / guaranteed by design but not tested. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 25 dscc form 2234 apr 97 case outline x figure 1. case outline standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 26 dscc form 2234 apr 97 case outline x inches millimeters symbol min nom max min nom max a .080 .120 2.032 3.048 b .006 .015 0.1524 0.381 b1 .006 .013 0.1524 0.3302 c .004 .010 0.1016 0.254 c1 .004 .008 0.1016 0.2032 d .610 .640 15.494 16.256 e .370 .390 9.398 9.906 e1 .430 .470 10.922 11.938 e2 .180 4.572 e3 .030 0.762 e .025 bsc 0.635 k n/a n/a l .250 .370 6.35 9.398 q .026 .045 0.6604 1.143 s1 .005 0.127 m .0015 0.0381 n 48 48 notes: 1 / all exposed metalized areas must be gold plat ed over electroplated nickel per mil-prf-38535. 2 / the lids are electrically connected to v ss . 3 / lead finishes are in accordance with mil-prf-38535. 4 / dimension symbology is in accordance with mil-prf-38535. 5 / lead position and coplanarity are not measured. 6 / id mark symbol is vendor option: no alphanumerics. one or both id methods may be used for pin 1 id. figure 1. case outline - continued. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 27 dscc form 2234 apr 97 device type all case outlines x terminal number terminal symbol terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 dir1 1b1 1b2 vss 1b3 1b4 v dd1 1b5 1b6 vss 1b7 1b8 2b1 2b2 vss 2b3 2b4 v dd1 2b5 2b6 vss 2b7 2b8 dir2 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 oe2 2a8 2a7 vss 2a6 2a5 v dd2 2a4 2a3 vss 2a2 2a1 1a8 1a7 vss 1a6 1a5 v dd2 1a4 1a3 vss 1a2 1a 1 oe1 pin description terminal symbol description oen output enable inputs (active low) dirn direction control inputs nan side a inputs or 3-state outputs (3.3 v port) nbn side b inputs or 3-state outputs (5.0 v port) figure 2. terminal connections . standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 28 dscc form 2234 apr 97 inputs operation ena ble oen direction dirn l l h l h x b data to a bus a data to b bus isolation h = high voltage level l = low voltage level x = irrelevant port a port b operation 3.3 volts 5.0 volts 3.3 volts v ss 3.3 v or 5.0 v 5.0 volts 5.0 volts 3.3 volts v ss v ss voltage translator non-translating non-translating cold spare port b cold spare note : control signals dirx and oex are 5 volt tolerant inputs. when v dd2 is at 3.3 volts, either 3.3 or 5.0 volt cmos logic levels can be applied to all control inputs. for proper operation, connect power to all v dd and ground all v ss pins (i.e., no floating v dd or v ss input pins). tie unused inputs to v ss . if v dd1 and v dd2 are not powered up together, then v dd2 should be powered up first for proper control of dirx and oex. the internal state of dirx and oex is unknown when v dd2 is not powered, because the internal circ uitry for these pins is powered by v dd2 . until v dd2 reaches 2.75 v 5%, control of the outputs by dirx and oex cannot be guaranteed. during operation of the part, after power up, insure v dd1 v dd2 . figure 3. truth table . standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 29 dscc form 2234 apr 97 figure 4. logic diagram . standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 30 dscc form 2234 apr 97 figure 4. logic diagram - continued. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 31 dscc form 2234 apr 97 figure 5. switching waveforms and test circuit . standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 32 dscc form 2234 apr 97 notes: 1 / v ref = 0.5v dd . 2 / c l = 50 pf minimum or equivalent (includes test jig and probe capacitance). 3 / i src is set to -1.0 ma and i snk is set to 1.0 ma for t phl and t plh measurements. 4 / input signal from pulse generator: v in = 0.0 v to v dd ; f 10 mhz; t r = 1.0 v/ns "0.3 v/ns; t f = 1.0 v/ns "0.3 v/ns; t r and t f shall be measured from 0.1 v dd to 0.9 v dd and from 0.9 v dd to 0.1 v dd , respectively. figure 5. switching waveforms and test circuit - continued. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 33 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in a ccordance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-pr f-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufac turer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiri ng or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table iia herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for cl asses q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. qualit y conformance inspection for device class m shall be in accordance with mil-prf-38535, appendi x a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 34 dscc form 2234 apr 97 table ib. sep test limits . 1 / 2 / device type t a = temperature v dd1 = 4.5 v bias for latch-up test 10 c 3 / effective let no upsets [mev/(mg/cm 2 )] maximum device cross section v dd = 5.5 v no latch-up let = 3 / 4 / all +25 c let 80 6 x 10 -9 cm 2 /bit 120 1 / for sep test conditions, see 4.4.4.4 herein. 2 / technology characterization and model veri fication supplemented by in-line data may be used in lieu of end-of-line testing. test plan must be approved by trb and qualifying activity . 3 / worst case temperature is t a +125 c. 4 / tested to a let of 120 mev/(mg/cm 2 ), with no latch-up (sel). table iia. electrical test requirements . test requirements subgroups (in accordance with mil-std- 883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1, 7, 9 1, 7, 9 1, 7, 9 final electrical parameters (see 4.2) 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 3 / 1, 2, 3, 7, 8, 9, 10, 11 group a test requirements (see 4.4) 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 3 / 1, 2, 3, 7, 8, 9, 10, 11 group d end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroups 1 and 7. 2 / pda applies to subgroups 1, 7, and deltas. 3 / delta limits as specified in table iib herein shall be required where specified, and the delta values shall be completed with refe rence to the zero hour electrical parameters. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 35 dscc form 2234 apr 97 table iib. burn-in and operating life test, delta parameters (+25 c) . parameters symbol delta limits output voltage low v ol 100 mv output voltage high v oh 100 mv table iii. irradiation test connections . device types open ground v dd = 5.0 v 0.5 v all 13, 14, 16, 17, 19, 20, 22, 23, 37, 38, 40, 41, 43, 44, 46, 47 1, 2, 4, 5, 8, 10, 11, 15, 21, 25, 26, 28, 29, 32, 34, 35, 39, 45, 48 3, 6, 7, 9, 12, 18, 24, 27, 30, 31, 33, 36, 42 note : each pin except 4, 7, 10, 15, 18, 21, 28, 31, 34, 39, 42 and 45 will have a resistor of 2.49 k ? 5% for irradiation testing. 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 3 herein. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. c. c in and c out , shall be measured only for initial qualification and after process or design changes which may affect capacitance. c in and c out shall be measured between the designated terminal and v ss at a frequency of 1 mhz. for c in and c out , test all applicable pins on five devices with zero failures. 4.4.2 group c inspection . the group c inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acqui ring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicabl e, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives s hall be as specified in the device manufac turer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under docum ent revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissi pation, as applicable, in accordance with the intent specifie d in test method 1005 of mil-std-883. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 36 dscc form 2234 apr 97 4.4.3 group d inspection . the group d inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for par ts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical par ameters shall be as specified in table iia herein. b. for device classes q, and v, the devices or test vehicl e shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil- prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point elec trical parameter limits as defined in table ia at t a = +25 c 5 c, after exposure, to the subgroups specified in table iia herein. c. when specified in the purchase or der or contract, a copy of the rha delta limits shall be supplied. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be per formed in accordance with mil-std-883, test method 1019, condition a, and as specified herein. 4.4.4.1.1 accelerated aging testing . accelerated aging testing shall be performed on all devices requiring a rha level greater than 5k rads (si). the post-anneal end-point electrical parameter limits shall be as specified in table ia herein and shall be the pre-irradiation end-point electrical parameter limits at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which ma y affect the rha response of the device. 4.4.4.2 dose rate induced latchup testing . dose rate induced latchup testing shall be performed in accordance with test method 1020 of mil-std-883 and as specified herein (see 1.5 herein). tests shall be performed on devices, sec, or approved test structures at technology qualification and afte r any design or process changes which may affect the rha capability of the process. 4.4.4.4 single event phenomena (sep) . sep testing shall be required on class v devices (see 1.5 herein). sep testing shall be performed on a technology process on the standard eval uation circuit (sec) or alte rnate sep test vehicle as approved by the qualifying activity at initial qualification and a fter any design or process changes which may affect the upset or latchup characteristics. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 100 errors or 10 6 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. the particle range shall be 20 micron in silicon. e. the test temperature shall be +25 c for the upset measurements and the maximum rated operating temperature 10 c for the latchup measurements. f. bias conditions shall be defined by the manufacturer for the latchup measurements. g. test four devices with zero failures. h. for sep test limits, see table ib herein. 4.5 methods of inspection . methods of inspection s hall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages given are referenced to the microcircuit v ss terminal. currents given are conventional current and positiv e when flowing into the referenced terminal. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 37 dscc form 2234 apr 97 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specif ication or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform de fense supply center columbus when a system application requires configuration control and which smd's are applic able to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) shoul d contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a ce rtificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 38 dscc form 2234 apr 97 appendix a a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirem ents of mil-prf-38535 and the manufacturers approved qm plan for use in monolithic microc ircuits, multichip modules (mcms), hybrid s, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are spec ified herein. two product assurance classes consisting of military high reliability (device class q) and space application (dev ice class v) are reflected in the part or identification n umber (pin). when available a choice of radiation hardine ss assurance (rha) levels are reflected in the pin. a.1.2 pin . the pin shall be as shown in the following example: 5962 r 98580 01 v 9 a federal rha device device die die stock class designator type class code det ails designator (see a.2.1) (see a.2.2) designator (see a.2.4) \ / (see a.2.3) \/ drawing number a.1.2.1 rha designator . device classes q and v rha identified die sha ll meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. a.1.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 54acs164245s radiation hardened, schmitt 16-bit bidirectional mult-purpose transceiver with three-state outputs and cold sparing 02 54acs164245s 1 / radiation hardened, schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, and extended voltage range 03 54acs164245s 1 / 2 / radiation hardened, schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, extended voltage range, and extended industrial temperature range of -40 c to +125 c a.1.2.3 device class designator . device class device requirements documentation q or v certification and qualif ication to the die requirements of mil-prf-38535. _______ 1 / device types 02 and 03 have an extended voltage range. 2 / device type 03 has an extended industrial temperature range of -40 c to +125 c. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 39 dscc form 2234 apr 97 appendix a a.1.2.4 die details . the die details designation shall be a unique lette r which designates the die?s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for ea ch product and variant supplied to this appendix. a.1.2.4.1 die physical dimensions . die type figure number 01, 02, 03 a-1 a.1.2.4.2 die bonding pad locations and electrical functions . die type figure number 01, 02, 03 a-1 a.1.2.4.3 interface materials . die type figure number 01, 02, 03 a-1 a.1.2.4.4 assembly related information . die type figure number 01, 02, 03 a-1 a.1.3 absolute maximum ratings . see paragraph 1.3 herein for details. a.1.4 recommended operating conditions . see paragraph 1.4 herein for details. a.2. applicable documents a.2.1 government specificat ions, standards, bulletin, and handbooks . unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in t he solicitation, form a part of this dr awing to the extent specified herein. specifications department of defense mil-prf-38535 - integrated circuits, manuf acturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. (copies of the specification, standards , bulletin, and handbook required by manufac turers in connection with specific acquisition functions should be obtained from the contracting activity or as di rected by the contracting activity). standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 40 dscc form 2234 apr 97 appendix a a.2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. a.3 requirements a.3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. a.3.2 design, construction and physical dimensions . the design, construction and phy sical dimensions shall be as specified in mil-prf-38535 and the manufacturer?s qm plan, for device classes q and v and herein. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2.4.1 and on figure a-1. a.3.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as specified in a.1.2.4.2 and on figure a-1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1.2.4.3 and on figure a-1. a.3.2.4 assembly related information . the assembly related information shall be as specified in a.1.2.4.4 and on figure a-1. a.3.2.5 truth table(s) . the truth table(s) shall be as defined in paragraph 3.2.3 herein. a.3.2.6 radiation exposure circuit . the radiation exposure circuit shall be as defined within paragraph 3.2.7 of the body of this document. a.3.3 electrical performanc e characteristics and post-i rradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t-irradiation parameter limit s are as specified in table i of the body of this document. a.3.4 electrical test requirements . the wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table i. a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the ce rtification mark, the manufactu rer?s identification and the pin listed in a.1.2 herein. the certification mark sha ll be a ?qml? or ?q? as required by mil-prf-38535. a.3.6 certification of compliance . for device classes q and v, a certificat e of compliance shall be required from a qml-38535 listed manufacturer in order to suppl y to the requirements of this drawing (see a.6.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, t he requirements of mil-prf-38535 and the requirements herein. a.3.7 certificate of conformance . a certificate of conformance as requi red for device classes q and v in mil-prf-38535 shall be provided with each lot of microc ircuit die delivered to this drawing. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 41 dscc form 2234 apr 97 appendix a a.4. quality assurance provisions a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the dev ice manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturer?s qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product using t he criteria defined within mil-std-883 test method 5007. b) 100% wafer probe (see paragraph a.3.4 herein). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil-std-883 test method 2010 or the alternate procedures allowed within mil-std-883 test method 5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required only for parts in tended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testing of packaged die shall be as specified in table iia herein. group e tests and conditions are as s pecified in paragraphs 4.4.4 here in. a.5. die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. a.6. notes a.6.1 intended use . microcircuit die conforming to th is drawing are intended for use in micr ocircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (origi nal equipment), design applications and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614)-692-0536. a.6.3 abbreviations, symbols and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. a.6.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have submitted a certificate of compliance (see a.3.6 herein) to dscc-va and have agreed to this drawing. standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 42 dscc form 2234 apr 97 appendix a figure a-1 die physical dimensions die size: 132.97 x 115.827 mils. die thickness: 17.5 +/- 1 mils. die bonding pad locations and electrical functions note: pad numbers reflect terminal numbers w hen placed in case outline x (see figure 2). standard microcircuit drawing size a 5962-98580 defense supply center columbus columbus, ohio 43216-5000 revision level d sheet 43 dscc form 2234 apr 97 appendix a interface materials top metallization: si al cu 6.2ka ? 7.6ka backside metallization: none. glassivation type: oxide/nitride thickness: 9ka - 11ka substrate: epitaxial lay er on single crystal silicon. assembly related information substrate potential: tied to v ss . special assembly instructions: none. standard microcircuit drawing source approval bulletin date: 02-05-10 approved sources of supply for smd 5962-98580 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accept ed by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-9858001qxc 65342 ut54acs 164245succ 5962r9858001vxc 65342 ut54acs 164245s uccr 5962-9858001q9a 65342 ut54acs164245s-q die 5962r9858001v9a 65342 ut54acs164245s-v die 5962-9858002qxc 65342 ut54acs164245s ucc 3 / 5962r9858002vxc 65342 ut54acs164245s uccr 3 / 5962-9858002q9a 65342 ut54acs164245s-q die 3 / 5962R9858002V9A 65342 ut54acs164245s-v die 3 / 5962-9858003qxc 65342 ut54acs164245s ucc 3 / 4 / 5962r9858003vxc 65342 ut54acs164245s uccr 3 / 4 / 5962-9858003q9a 65342 ut54acs164245s-q die 3 / 4 / 5962r9858003v9a 65342 ut54acs164245s-v die 3 / 4 / 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / these parts have an extended voltage range. 4 / these parts have an extended industrial temperature range of -40 c to +125 c. vendor cage vendor name number and address 65342 utmc microelectronic systems 4350 centennial boulevard colorado springs, co 80907-3486 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin. |
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