opi - 110 series optically coupled isolators baseefa and atex certified 2.54 6.6 5.84 (1) (2) (3) (4) notch indicates pin 1 (1) (2) (3) (4) 13.9 0.5 square 7.62 min 12.7 5.59 6.1 mechanical data bedford opto technology ltd lindsaylands, biggar, ml12 6nr tel: +44 (0) 1899 221221 fax: +44 (0) 1899 221009 website: bot.co.u k e - mail: bill@bot.co.uk iss f 13.3.02 the opi - 110, a/b/c and d are a family of optically coupled isolators, each consisting of a infrared light emitting diode, coupl ed to an npn silicon phototransistor sealed in an injection moulded plastic housing. this series is designed for applications re quiring high voltage isolation between input and output. all electrical parameters are 100% tested by manufacturing. specificati ons are guaranteed to a 0.65% aql. 10 kv electrical rating high current transfer ratio - 100% min @ 1ma if. designed and manufact ured to en50020 1995 and en50014 1998 baseefa certified bas no. ex 95c2096u eex ia iic atex certified bas 01atex1278u condition of use apply en50020 1994 clauses 6..4.9 and 8.8 1/4
bedford opto technology ltd lindsaylands, biggar, ml12 6nr tel: +44 (0) 1899 221221 fax: +44 (0) 1899 221009 website: bot.co.u k e - mail: bill@bot.co.uk absolute maximum ratings (25 o c unless otherwise noted) input diode forward dc current reverse dc voltage 50ma (3) 2v output phototransistor collector - emitter voltage emitter - collector voltage 30 v 5 v operating temp - 40 o c to +85 o c storage temp - 40 o c to +85 o c input - to - output isolation voltage + 10kv dc (1) lead s0ldering temp (2) (1.6mm) from case for 5sec with 240 o c notes 1 measured with input diode leads shorted together and output leads shorted together. 2 rma flux is recommended. duration can be extened to 10 sec. max. when flow soldering. 3 derate linearly 0.73 ma/ c above 25 c 4 derate linearly 1.67 ma/ c above 25 c 5 dera te linearly 1.67 ma/ c above 25 c opi110 series 2/4 iss f 13.3.02
parameter symbol min typ max units test condi s- tions input diode forward voltage v f 1.5 v if = 20ma reverse current i r 100 ua vr = 2v output phototransistor collector - emitter breakdown vol t- v (br)ceo 30 v ic = 1ma if = 0 emitter - collector breakdown vol t- v (br)eco 5 v ie = 100ua collector - emitter dark current i ceo 100 na vce = 10v coupled characteristics dc current transfer ratio i c / i f opi 110a 25 % if=10ma, vce=5v opi 110b 50 % if=10ma, vce=5v opi 110c 100 % if=10ma, vce=5v opi 110d 100 % if=1ma, vce=5v isolation voltage v iso 10 kv see note (1) collector - emitter saturation voltage v ce(sat) 0.4 v if=10ma, input - output capacitance c io 0.06 pf turn - on time t on 5 us ic=10ma, vcc=10v, turn - off time t off 5 us ic=10ma, vcc=10v, opto electronic data (t a = 25 o c) bedford opto technology ltd lindsaylands, biggar, ml12 6nr tel: +44 (0) 1899 221221 fax: +44 (0) 1899 221009 website: bot.co.u k e - mail: bill@bot.co.uk note: measured with input diode leads shorted together and output leads shorted together. (sample testing only). opi110 series 3/4 iss f 13.3.02
e ssential health and safety info r- m a tion in accordance with atex d i- rective 94/9/ec information contained in this datasheet is deemed to conform to the above directive and is supplied in relation to the following shipment: - customer____________________ order number________________ invoice number_______________ type number____________ ______ quantity______________________ batch number_________________ date code_____________________ date of shipment_________ _____ 4/4 iss f 13.3.02
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