1.5?v rated si1031r/x vishay siliconix new product document number: 71171 s-31507?rev. b, 14-jul-03 www.vishay.com 1 p-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (ma) 8 @ v gs = -4.5 v -150 - 20 12 @ v gs = -2.5 v -125 - 20 15 @ v gs = -1.8 v -100 20 @ v gs = -1.5 v -30 features benefits applications high-side switching low on-resistance: 8 low threshold: 0.9 v (typ) fast switching speed: 45 ns 1.8-v operation gate-source esd protection ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems power supply converter circuits load/power switching cell phones, pagers sc-75a (sot - 416): si1031r sc-89 (sot - 490): si1031x top view 2 1 s d g 3 marking code: h sc-75a or sc-89 absolute maximum ratings (t a = 25 c unless otherwise noted) si1031r si1031x parameter symbol 5 secs steady state 5 secs steady state unit drain-source voltage v ds -20 v gate-source v oltage v gs 6 v continuous drain current (t j = 150 c) a t a = 25 c i d -150 -140 -165 -155 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 85 c i d -110 -100 -150 -125 ma pulsed drain current a i dm -500 -600 ma continuous source current (diode conduction) a i s -250 -200 -340 -240 maximum power dissipation a t a = 25 c p d 280 250 340 300 mw maximum power dissipation a t a = 85 c p d 145 130 170 150 mw operating junction and storage temperature range t j , t stg - 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v notes a. surface mounted on fr4 board.
si1031r/x vishay siliconix new product www.vishay.com 2 document number: 71171 s-31507?rev. b, 14-jul-03 specifications (t a = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a -0.40 -1.20 v gate body leakage i gss v ds = 0 v, v gs = 2.8 v 0.5 1 a gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 1 2 a zero gate voltage drain current i dss v ds = -16 v, v gs = 0 v -1 -500 na zero gate voltage drain current i dss v ds = -16 v, v gs = 0 v, t j = 85 c -10 a on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -200 ma v gs = -4.5 v, i d = - 150 ma 8 drain source on state resistance a r ds( ) v gs = -2.5 v, i d = - 125 m a 12 drain-source on-state resistance a r ds(on) v gs = -1.8 v, i d = - 100 m a 15 v gs = -1.5 v, i d = - 30 m a 20 forward t ransconductance a g fs v ds = -10 v, i d = - 150 ma 0.4 s diode forward voltage a v sd i s = -150 ma, v gs = 0 v -1.2 v dynamic b total gate charge q g 1500 gate-source charge q gs v ds = -10 v, v gs = -4.5 v, i d = -150 ma 150 pc gate-drain charge q gd 450 turn-on delay time t d(on) 55 rise time t r v dd = -10 v, r l = 65 30 ns turn-off delay time t d(off) v dd = -10 v , r l = 65 i d - 150 ma, v gen = -4.5 v, r g = 10 60 ns fall time t f 30 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (t a = 25 c unless noted) 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v gs = 5 thru 2.5 v t j = -55 c 125 c 2 v 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (ma) i d 1.8 v
si1031r/x vishay siliconix new product document number: 71171 s-31507?rev. b, 14-jul-03 www.vishay.com 3 typical characteristics (t a = 25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 - on-resistance ( r ds(on) ) 0 20 40 60 80 100 120 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 0 200 400 600 800 1000 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 150 ma i d - drain current (ma) v gs = 4.5 v i d = 150 ma v gs = 1.8 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0 10 20 30 40 50 0123456 i d = 150 ma 1000 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) v gs = 4.5 v i d = 125 ma v gs = 2.5 v v gs = 1.8 v i d = 125 ma t j = 125 c t j = 25 c t j = -55 c 10 100 i s - source current (ma) v gs = 0 v f = 1 mhz
si1031r/x vishay siliconix new product www.vishay.com 4 document number: 71171 s-31507?rev. b, 14-jul-03 typical characteristics (t a = 25 c unless noted) -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 -50 -25 0 25 50 75 100 125 i d = 0.25 ma threshold voltage variance vs. temperature variance (v) v gs(th) t j - temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 i gss vs. temperature t j - temperature ( c) i gss - ( a) -7 -6 -5 -4 -3 -2 -1 0 -50 -25 0 25 50 75 100 125 bv gss vs. temperature t j - temperature ( c) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (sc-75a, si1031r only) square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =500 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm v gs = 2.8 v bv gss - gate-to-source breakdown voltage (v)
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