advance product information september 27, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com 10gb/s wide dynamic range diffe rential tia TGA4817-EPU key features and performance ?3200 ? single-ended transimpedance ? > 9 ghz 3db bandwidth ? > 1.6ma rms input overload current ?11pa/ hz input noise current ? rx signal indicator (rssi) ? 0.15m 3mi phemt technology ? bias conditions: 3.3v, 70ma ? chip dimensions: 1.20 x 1.20 x 0.10 mm (0.047 x 0.047 x 0.004 in) preliminary measured performance bias conditions: v + =3.3v i + =70ma primary applications ? oc-192/stm-64 fiber optic systems 10.0gb/s, 2 31 -1 prbs, i pd = 95 ua rms 52 55 58 61 64 67 70 73 76 79 13579111315 frequency (ghz) differential zt (db-ohm) -27 -24 -21 -18 -15 -12 -9 -6 -3 0 output return loss (db) differential transimpedance s22 non-inverting output s22 inverting output c pin = 0.2 pf r pin = 15 ohm l bw = 1 nh
advance product information september 27, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com TGA4817-EPU table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 5.5 v 2/ i + positive supply current (quiescent) 80 ma 2/ p in input continuous wave power 14.5 dbm 2/ p d power dissipation 0.44 w 2/ t ch operating channel temperature 117 c 4/ 5/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 117 c 1/ these ratings represent the maximum operable values for this device. 2/ current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+6 hours. 4/ these ratings apply to each individual fet. 5/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
advance product information september 27, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com table ii rf characterization table (t a = 25 c, nominal) (v + = 3.3v, i + = 70ma) 1/ parameter typical unit notes single-ended transimpedance (1ghz) 3200 ? 2/ 3 / 3db transimpedance bandwidth 9 ghz 2/ 3 / low frequency 3db cut-off < 40 khz 4/ transimpedance ripple (1 to 7ghz) 1.5 dbpp 2/ 3 / group delay variation (1 to 7ghz) 15 ps 2/ 3 / ave eq. noise current (1 to 7ghz) 11 pa/ hz 3/ output return loss (0.1 to f3db) 12 db 2/ 3 / input overload current 1.6 ma rms 5/ sensitivity 10 ua rms 5/ single-ended limited output voltage 600 mvpp 1/ 50 ? single-ended output impedance 2/ photodiode& bond wire model: cpd = 0.2pf, rpd = 15 ? , lbw = 1.0 nh 3/ rf output interconnect inductance: 0.42nh 4/ external bypass capacitors required (see assembly drawing) 5/ 10gbit/s, 2 31 -1 prbs, ber < 10 -12 TGA4817-EPU table iii thermal information parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to backside of carrier) v + = 3.3 v i + = 70 ma pdiss = 0.231 w 74 17.3 1.1 e+8 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature.
advance product information september 27, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com typical fixtured performance optical eye 10gbps prbs 2 31 -1 TGA4817-EPU photodiode current = 9.5 ua rms photodiode current = 1.5 ma rms
advance product information september 27, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com typical fixtured performance TGA4817-EPU 1.e-14 1.e-13 1.e-12 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 0.001 0.010 0.100 1.000 10.000 photodiode current (ma rms) bit error rate 10 100 1000 0.01 0.10 1.00 photodiode current (ma rms) output voltage (mvpp)
advance product information september 27, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com typical fixtured performance TGA4817-EPU 1.8 2.1 2.4 2.7 3.0 3.3 0.0 0.2 0.4 0.6 0.8 1.0 photodiode current (ma rms) rssi output voltage (v) 30 35 40 45 50 55 60 65 70 75 135791113151719 frequency (ghz) single-ended zt (db-ohm) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 - out p ut return loss ( db ) +75c +50c +25c +0c -25c c pin = 0.2 pf r pin = 15 ohm l bw = 1 nh
advance product information september 27, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com mechanical drawing TGA4817-EPU units: millim eters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance : +/- 0.051 (0.002) gnd is backside of mmic bond pad #1 (rf in) 0.079 x 0.100 (0.003 x 0.004) bond pad #2 (c bypass) 0.160 x 0.180 (0.006 x 0.007) bond pad #3 (v+) 0.079 x 0.079 (0.003 x 0.003) bond pad #4 (fbin) 0.079 x 0.079 (0.003 x 0.003) bond pad #5 (+ rf out) 0.079 x 0.100 (0.003 x 0.004) bond pad #6 (- rf out) 0.079 x 0.100 (0.003 x 0.004) bond pad #7 (fbin) 0.079 x 0.079 (0.003 x 0.003) alternate bond pad #8 (rssi) 0.079 x 0.079 (0.003 x 0.003) 0.000 (0.000) 0.085 (0.003) 0.600 (0.024) 0.972 (0.038) 1.115 (0.044) 1.200 (0.047) 0.450 (0.018) 0.750 (0.030) 0.000 (0.000) 0.085 (0.003) 0.267 (0.011) 0.377 (0.015) 1.115 (0.044) 1.200 (0.047) 0.128 (0.005) 0.277 (0.011) 0.382 (0.015) 1 234 5 6 7 8
advance product information september 27, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4817-EPU +3.3v c1 c2 input bond wire l~ 1.5mm (1nh) output bond wires l~ 0.6mm (0.4nh) rssi alternate c2 connection +rf out -rf out c1 - +3.3v bypass capacitor (>35nf) c2 - sets low frequency corner (>35nf) recommended components c1,c2 avx: 0402yc393kat2a c1,c2 presidio: vl4040x7r363m16vh5
advance product information september 27, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 -8504 email: info-mmw@tqs.c om web: www.triquint.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. TGA4817-EPU
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